NL6500600A - - Google Patents

Info

Publication number
NL6500600A
NL6500600A NL6500600A NL6500600A NL6500600A NL 6500600 A NL6500600 A NL 6500600A NL 6500600 A NL6500600 A NL 6500600A NL 6500600 A NL6500600 A NL 6500600A NL 6500600 A NL6500600 A NL 6500600A
Authority
NL
Netherlands
Application number
NL6500600A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6500600A publication Critical patent/NL6500600A/xx

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12Vaporous components, e.g. vapour-liquid-solid-growth
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/17Vapor-liquid-solid

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
NL6500600A 1964-01-28 1965-01-18 NL6500600A (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US340701A US3346414A (en) 1964-01-28 1964-01-28 Vapor-liquid-solid crystal growth technique

Publications (1)

Publication Number Publication Date
NL6500600A true NL6500600A (en:Method) 1965-07-29

Family

ID=23334570

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6500600A NL6500600A (en:Method) 1964-01-28 1965-01-18

Country Status (5)

Country Link
US (1) US3346414A (en:Method)
BE (1) BE658975A (en:Method)
DE (1) DE1290921B (en:Method)
GB (1) GB1070991A (en:Method)
NL (1) NL6500600A (en:Method)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3446659A (en) * 1966-09-16 1969-05-27 Texas Instruments Inc Apparatus and process for growing noncontaminated thermal oxide on silicon
US3462320A (en) * 1966-11-21 1969-08-19 Bell Telephone Labor Inc Solution growth of nitrogen doped gallium phosphide
US3493431A (en) * 1966-11-25 1970-02-03 Bell Telephone Labor Inc Vapor-liquid-solid crystal growth technique
NL143436B (nl) * 1966-12-14 1974-10-15 Philips Nv Werkwijze voor het vervaardigen van draadvormige siliciumcarbide kristallen en voorwerpen geheel of voor een deel bestaande uit deze kristallen.
US3476593A (en) * 1967-01-24 1969-11-04 Fairchild Camera Instr Co Method of forming gallium arsenide films by vacuum deposition techniques
NL6705847A (en:Method) * 1967-04-26 1968-10-28
US3505127A (en) * 1967-09-21 1970-04-07 Bell Telephone Labor Inc Vapor-liquid-solid crystal growth technique for the production of needle-like single crystals
US3536538A (en) * 1968-03-29 1970-10-27 Bell Telephone Labor Inc Crystal growth technique
NL6805300A (en:Method) * 1968-04-13 1969-10-15
US3617371A (en) * 1968-11-13 1971-11-02 Hewlett Packard Co Method and means for producing semiconductor material
US4058418A (en) * 1974-04-01 1977-11-15 Solarex Corporation Fabrication of thin film solar cells utilizing epitaxial deposition onto a liquid surface to obtain lateral growth
US4155781A (en) * 1976-09-03 1979-05-22 Siemens Aktiengesellschaft Method of manufacturing solar cells, utilizing single-crystal whisker growth
US4132571A (en) * 1977-02-03 1979-01-02 International Business Machines Corporation Growth of polycrystalline semiconductor film with intermetallic nucleating layer
FR2407892A1 (fr) * 1977-11-04 1979-06-01 Rhone Poulenc Ind Procede de fabrication de silicium pour la conversion photovoltaique
US4789537A (en) * 1985-12-30 1988-12-06 The United States Of America As Represented By The United States Department Of Energy Prealloyed catalyst for growing silicon carbide whiskers
US4702901A (en) * 1986-03-12 1987-10-27 The United States Of America As Represented By The United States Department Of Energy Process for growing silicon carbide whiskers by undercooling
JPH0782996B2 (ja) * 1986-03-28 1995-09-06 キヤノン株式会社 結晶の形成方法
JPH08973B2 (ja) * 1986-03-31 1996-01-10 キヤノン株式会社 堆積膜形成法
US5405654A (en) * 1989-07-21 1995-04-11 Minnesota Mining And Manufacturing Company Self-cleaning chemical vapor deposition apparatus and method
US5364660A (en) * 1989-07-21 1994-11-15 Minnesota Mining And Manufacturing Company Continuous atmospheric pressure CVD coating of fibers
US5322711A (en) * 1989-07-21 1994-06-21 Minnesota Mining And Manufacturing Company Continuous method of covering inorganic fibrous material with particulates
US7686886B2 (en) * 2006-09-26 2010-03-30 International Business Machines Corporation Controlled shape semiconductor layer by selective epitaxy under seed structure
US7449065B1 (en) 2006-12-02 2008-11-11 Ohio Aerospace Institute Method for the growth of large low-defect single crystals
US8153482B2 (en) * 2008-09-22 2012-04-10 Sharp Laboratories Of America, Inc. Well-structure anti-punch-through microwire device
WO2015143206A1 (en) 2014-03-19 2015-09-24 Solar-Tectic, Llc Method of making ceramic glass

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL99536C (en:Method) * 1951-03-07 1900-01-01
DE1042553B (de) * 1953-09-25 1958-11-06 Int Standard Electric Corp Verfahren zur Herstellung von Silicium grosser Reinheit
BE544843A (en:Method) * 1955-02-25
BE547665A (en:Method) * 1955-06-28
DE1048638B (de) * 1957-07-02 1959-01-15 Siemens &. Halske Aktiengesellschaft, Berlin und München Verfahren zur Herstellung von Halbleitereinkristallen, insbesondere von Silizium durch thermische Zersetzung oder Reduktion

Also Published As

Publication number Publication date
US3346414A (en) 1967-10-10
BE658975A (en:Method) 1965-05-17
GB1070991A (en) 1967-06-07
DE1290921B (de) 1969-03-20

Similar Documents

Publication Publication Date Title
BE658975A (en:Method)
BE661110A (en:Method)
BE661103A (en:Method)
BE660569A (en:Method)
BE659123A (en:Method)
BE658970A (en:Method)
BE658380A (en:Method)
BE658275A (en:Method)
BE657891A (en:Method)
BE655591A (en:Method)
BE648718A (en:Method)
BE642974A (en:Method)
BE642797A (en:Method)
BE642770A (en:Method)
BE642741A (en:Method)
BE642735A (en:Method)
BE642654A (en:Method)
BE642652A (en:Method)
BE642589A (en:Method)
BE642588A (en:Method)
BE642530A (en:Method)
BE642508A (en:Method)
BE642470A (en:Method)
BE642458A (en:Method)
BE642437A (en:Method)