NL6805300A - - Google Patents

Info

Publication number
NL6805300A
NL6805300A NL6805300A NL6805300A NL6805300A NL 6805300 A NL6805300 A NL 6805300A NL 6805300 A NL6805300 A NL 6805300A NL 6805300 A NL6805300 A NL 6805300A NL 6805300 A NL6805300 A NL 6805300A
Authority
NL
Netherlands
Application number
NL6805300A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to NL6805300A priority Critical patent/NL6805300A/xx
Priority to DE1917136A priority patent/DE1917136C3/de
Priority to GB1229900D priority patent/GB1229900A/en
Priority to NO1475/69A priority patent/NO124059B/no
Priority to CH553769A priority patent/CH538300A/de
Priority to FR6911083A priority patent/FR2006185A1/fr
Priority to ES365930A priority patent/ES365930A1/es
Priority to BE731440D priority patent/BE731440A/xx
Priority to US815678A priority patent/US3632405A/en
Publication of NL6805300A publication Critical patent/NL6805300A/xx

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12Vaporous components, e.g. vapour-liquid-solid-growth
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/90Carbides
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/36Carbides
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/10Particle morphology extending in one dimension, e.g. needle-like
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/60Particles characterised by their size
    • C01P2004/61Micrometer sized, i.e. from 1-100 micrometer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
NL6805300A 1968-04-13 1968-04-13 NL6805300A (en:Method)

Priority Applications (9)

Application Number Priority Date Filing Date Title
NL6805300A NL6805300A (en:Method) 1968-04-13 1968-04-13
DE1917136A DE1917136C3 (de) 1968-04-13 1969-04-02 Verfahren zur Herstellung von drahtförmigen Kristallen
GB1229900D GB1229900A (en:Method) 1968-04-13 1969-04-10
NO1475/69A NO124059B (en:Method) 1968-04-13 1969-04-10
CH553769A CH538300A (de) 1968-04-13 1969-04-10 Verfahren zur Herstellung von drahtförmigen Kristallen
FR6911083A FR2006185A1 (en:Method) 1968-04-13 1969-04-10
ES365930A ES365930A1 (es) 1968-04-13 1969-04-11 Un metodo de fabricar cristales, particularmente cristales filamentosos.
BE731440D BE731440A (en:Method) 1968-04-13 1969-04-11
US815678A US3632405A (en) 1968-04-13 1969-04-14 Crystals, in particular crystal whiskers and objects comprising such crystals

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6805300A NL6805300A (en:Method) 1968-04-13 1968-04-13

Publications (1)

Publication Number Publication Date
NL6805300A true NL6805300A (en:Method) 1969-10-15

Family

ID=19803336

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6805300A NL6805300A (en:Method) 1968-04-13 1968-04-13

Country Status (9)

Country Link
US (1) US3632405A (en:Method)
BE (1) BE731440A (en:Method)
CH (1) CH538300A (en:Method)
DE (1) DE1917136C3 (en:Method)
ES (1) ES365930A1 (en:Method)
FR (1) FR2006185A1 (en:Method)
GB (1) GB1229900A (en:Method)
NL (1) NL6805300A (en:Method)
NO (1) NO124059B (en:Method)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5404836A (en) * 1989-02-03 1995-04-11 Milewski; John V. Method and apparatus for continuous controlled production of single crystal whiskers
JP2697474B2 (ja) * 1992-04-30 1998-01-14 松下電器産業株式会社 微細構造の製造方法
RU2099808C1 (ru) * 1996-04-01 1997-12-20 Евгений Инвиевич Гиваргизов Способ выращивания ориентированных систем нитевидных кристаллов и устройство для его осуществления (варианты)
US6221154B1 (en) * 1999-02-18 2001-04-24 City University Of Hong Kong Method for growing beta-silicon carbide nanorods, and preparation of patterned field-emitters by chemical vapor depositon (CVD)
KR20040000418A (ko) * 2001-03-30 2004-01-03 더 리전트 오브 더 유니버시티 오브 캘리포니아 나노구조체 및 나노와이어의 제조 방법 및 그로부터제조되는 디바이스

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3346414A (en) * 1964-01-28 1967-10-10 Bell Telephone Labor Inc Vapor-liquid-solid crystal growth technique
US3493431A (en) * 1966-11-25 1970-02-03 Bell Telephone Labor Inc Vapor-liquid-solid crystal growth technique

Also Published As

Publication number Publication date
CH538300A (de) 1973-06-30
DE1917136B2 (en:Method) 1973-10-04
GB1229900A (en:Method) 1971-04-28
FR2006185A1 (en:Method) 1969-12-19
NO124059B (en:Method) 1972-02-28
BE731440A (en:Method) 1969-10-13
DE1917136C3 (de) 1974-05-16
US3632405A (en) 1972-01-04
DE1917136A1 (de) 1970-09-24
ES365930A1 (es) 1971-03-16

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