NL237834A - - Google Patents

Info

Publication number
NL237834A
NL237834A NL237834DA NL237834A NL 237834 A NL237834 A NL 237834A NL 237834D A NL237834D A NL 237834DA NL 237834 A NL237834 A NL 237834A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL237834A publication Critical patent/NL237834A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/925—Fluid growth doping control, e.g. delta doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
NL237834D 1958-04-09 NL237834A (uk)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US727441A US2977258A (en) 1958-04-09 1958-04-09 Production of semiconductors and the like

Publications (1)

Publication Number Publication Date
NL237834A true NL237834A (uk)

Family

ID=24922672

Family Applications (1)

Application Number Title Priority Date Filing Date
NL237834D NL237834A (uk) 1958-04-09

Country Status (6)

Country Link
US (1) US2977258A (uk)
BE (1) BE576786A (uk)
DE (1) DE1132097B (uk)
FR (1) FR1220382A (uk)
GB (1) GB908951A (uk)
NL (1) NL237834A (uk)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3368021A (en) * 1962-11-15 1968-02-06 Loung Pai Yen Furnace for refractory metals
US3160497A (en) * 1962-11-15 1964-12-08 Loung Pai Yen Method of melting refractory metals using a double heating process
DE1243641B (de) * 1962-12-12 1967-07-06 Siemens Ag Verfahren zur Herstellung von Halbleiterstaeben durch Ziehen aus der Schmelze
DE1294939B (de) * 1962-12-21 1969-05-14 Siemens Ag Verfahren und Vorrichtung zur Herstellung von aus Halbleitermaterial bestehenden Einkristallen durch Ziehen aus einer Schmelze
DE1256626B (de) * 1963-03-13 1967-12-21 Siemens Ag Verfahren zur Herstellung von Halbleiterstaeben durch Ziehen aus der Schmelze
DE1217926B (de) * 1963-08-17 1966-06-02 Siemens Ag Verfahren zum Vermeiden von Streifen in Metall- oder Halbleiterkristallen
DE1251721B (de) * 1963-10-28 1967-10-12 Siemens Aktiengesellschaft, Berlin und München München Verfahren zum Herstellen von Halbleiteiknstallen vorzugsweise Halbleiteremknstallen mit einstellbarer, beispielsweise konstanter Fremdstoffkonzentration
DE1264399B (de) * 1965-06-10 1968-03-28 Siemens Ag Vorrichtung zum tiegelfreien Zonenschmelzen
US3370927A (en) * 1966-02-28 1968-02-27 Westinghouse Electric Corp Method of angularly pulling continuous dendritic crystals
US3405890A (en) * 1966-05-24 1968-10-15 Eickmann Karl Control means in fluid-power driven, fluid-borne vehicles
DE1544301A1 (de) * 1966-09-28 1970-05-27 Siemens Ag Verfahren zum tiegelfreien Zonenschmelzen eines kristallinen Stabes,insbesondere Halbleiterstabes
US3471266A (en) * 1967-05-29 1969-10-07 Tyco Laboratories Inc Growth of inorganic filaments
US3607115A (en) * 1969-10-29 1971-09-21 Gen Motors Corp Crystal pulling from molten melts including solute introduction means below the seed-melt interface
US4125425A (en) * 1974-03-01 1978-11-14 U.S. Philips Corporation Method of manufacturing flat tapes of crystalline silicon from a silicon melt by drawing a seed crystal of silicon from the melt flowing down the faces of a knife shaped heated element
US4650540A (en) * 1975-07-09 1987-03-17 Milton Stoll Methods and apparatus for producing coherent or monolithic elements
US4230674A (en) * 1976-12-27 1980-10-28 Mobil Tyco Solar Energy Corporation Crucible-die assemblies for growing crystalline bodies of selected shapes
US4305298A (en) * 1978-08-28 1981-12-15 Itt Industries, Inc. Mechanical resonator arrangements
US4190631A (en) * 1978-09-21 1980-02-26 Western Electric Company, Incorporated Double crucible crystal growing apparatus
US4282184A (en) * 1979-10-09 1981-08-04 Siltec Corporation Continuous replenishment of molten semiconductor in a Czochralski-process, single-crystal-growing furnace
US4454096A (en) * 1981-06-15 1984-06-12 Siltec Corporation Crystal growth furnace recharge
US4389377A (en) * 1981-07-10 1983-06-21 The United States Of America As Represented By The United States Department Of Energy Apparatus for growing a dendritic web
US4659421A (en) * 1981-10-02 1987-04-21 Energy Materials Corporation System for growth of single crystal materials with extreme uniformity in their structural and electrical properties
JPS60137891A (ja) * 1983-12-24 1985-07-22 Sumitomo Electric Ind Ltd 化合物半導体単結晶引き上げ方法と装置
CA1261715A (en) * 1984-07-06 1989-09-26 General Signal Corporation Apparatus and process for growing monocrystals of semiconductor materials from shallow crucibles by czochralski technique
GB2188854A (en) * 1986-04-09 1987-10-14 Philips Electronic Associated Apparatus and a method for growing a crystal using a low-pressure Czochralski method and a crucible holder for use in such apparatus and method
CA1306407C (en) * 1987-06-08 1992-08-18 Michio Kida Apparatus for growing crystals of semiconductor materials
US5016683A (en) * 1990-03-27 1991-05-21 General Signal Corporation Apparatus for controllably feeding a particulate material
US5290395A (en) * 1990-07-26 1994-03-01 Sumitomo Electric Industries, Ltd. Method of and apparatus for preparing single crystal
JP4059943B2 (ja) * 1996-10-24 2008-03-12 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体単結晶製造装置のメルトレシーブ

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB755422A (en) * 1953-01-19 1956-08-22 Telefunken Gmbh An improved method for the production of single crystals of semi-conductor materials
DE1134967B (de) * 1954-03-02 1962-08-23 Siemens Ag Verfahren zum Ziehen eines stabfoermigen kristallinen Halbleiterkoerpers
FR1119039A (fr) * 1954-03-09 1956-06-14 Siemens Ag Procédé pour la préparation d'un corps cristallin, en particulier d'un corps semiconducteur
US2809136A (en) * 1954-03-10 1957-10-08 Sylvania Electric Prod Apparatus and method of preparing crystals of silicon germanium group
US2892739A (en) * 1954-10-01 1959-06-30 Honeywell Regulator Co Crystal growing procedure

Also Published As

Publication number Publication date
FR1220382A (fr) 1960-05-24
US2977258A (en) 1961-03-28
DE1132097B (de) 1962-06-28
BE576786A (fr) 1959-07-16
GB908951A (en) 1962-10-24

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