NL2022817B1 - Surface/interface passivation layer for high-efficiency crystalline silicon cell and passivation method - Google Patents
Surface/interface passivation layer for high-efficiency crystalline silicon cell and passivation method Download PDFInfo
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- NL2022817B1 NL2022817B1 NL2022817A NL2022817A NL2022817B1 NL 2022817 B1 NL2022817 B1 NL 2022817B1 NL 2022817 A NL2022817 A NL 2022817A NL 2022817 A NL2022817 A NL 2022817A NL 2022817 B1 NL2022817 B1 NL 2022817B1
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- siox
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- 238000002161 passivation Methods 0.000 title claims abstract description 146
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 58
- 238000000034 method Methods 0.000 title claims abstract description 44
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 65
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 65
- 239000010703 silicon Substances 0.000 claims abstract description 65
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 61
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 claims abstract description 10
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 claims abstract description 10
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 claims abstract description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 88
- 229910004205 SiNX Inorganic materials 0.000 claims description 65
- 238000000151 deposition Methods 0.000 claims description 40
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical class O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 32
- 230000008021 deposition Effects 0.000 claims description 29
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 24
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 20
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 19
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 18
- 229910000077 silane Inorganic materials 0.000 claims description 18
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 16
- 101150097381 Mtor gene Proteins 0.000 claims description 15
- 239000001272 nitrous oxide Substances 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 11
- 229910002804 graphite Inorganic materials 0.000 claims description 11
- 239000010439 graphite Substances 0.000 claims description 11
- 229910021529 ammonia Inorganic materials 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 8
- 229910017107 AlOx Inorganic materials 0.000 claims description 2
- 238000001556 precipitation Methods 0.000 claims 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 3
- 229910052593 corundum Inorganic materials 0.000 claims 1
- 229910001845 yogo sapphire Inorganic materials 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 18
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 115
- 230000000052 comparative effect Effects 0.000 description 34
- 238000000231 atomic layer deposition Methods 0.000 description 19
- 230000006798 recombination Effects 0.000 description 15
- 238000005215 recombination Methods 0.000 description 15
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 230000001603 reducing effect Effects 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 101150063042 NR0B1 gene Proteins 0.000 description 5
- 239000000969 carrier Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 238000006388 chemical passivation reaction Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910008045 Si-Si Inorganic materials 0.000 description 2
- 229910006411 Si—Si Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical class [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- PPDBOQMNKNNODG-NTEUORMPSA-N (5E)-5-(4-chlorobenzylidene)-2,2-dimethyl-1-(1,2,4-triazol-1-ylmethyl)cyclopentanol Chemical compound C1=NC=NN1CC1(O)C(C)(C)CC\C1=C/C1=CC=C(Cl)C=C1 PPDBOQMNKNNODG-NTEUORMPSA-N 0.000 description 1
- 101100055113 Caenorhabditis elegans aho-3 gene Proteins 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- -1 SOLAR-CELL ELEMENT Substances 0.000 description 1
- 229910020286 SiOxNy Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
Claims (2)
- CONCLUSIES:1. Een oppervlakte/interface passiveerlaag voor een hoogrenderende kristallijne siliciumcel, omvattende:- een passiveerlaag op een voorzijde van een n+-type dopinglaag van een p-type kristallijne siliciumcel, met een vierlaagse gelamineerde structuur op volgorde van aSiOx:H (2 nm)/a-SiNx:H (2.18, 10 nm)/a-SiNx:H (2.08, 30 nm)/a-SiOx:H (110 nm); en- een passiveerlaag op een achterzijde van een p-type siliciumsubstraat van het p-type kristallijne siliciumcel, met een vierlaagse gelamineerde structuur op volgorde van aSiOx:H (2 nm)/ AI2O3 (15 nm)/a-SiOx:H (220 nm)/a-SiNx:H (2.08, 80 nm).2. De oppervlakte/interface passiveerlaag voor een hoogrenderende kristallijne silicium zonnecel volgens conclusie 1, waarin de p-type kristallijne siliciumcel een p-type PERC-cel is.3. Een passivering methode voor een hoogrenderende kristallijne siliciumcel, voorzien van de stappen:(1) het passiveren van een voorzijde van een n+-type dopinglaag, omvattende:- het bereiden van gehydrogeneerd amorf siliciumoxide (a-SiOx:H) door middel van plasmaversterkte chemische dampdepositie (PECVD); en- het bereiden van twee lagen gehydrogeneerd amorf siliciumnitride (a-SiNx:H) met verschillende brekingsindexen op de a-SiOx:H door PECVD;- het neerslaan van a-SiOx:H door PECVD om een passiveringsfilm te vormen met een vierlaagse gelamineerde structuur van a-SiOx:H (2.18, 10 nm)/a-SiNx:H (2.18, 10 nm)/aSiNx:H (2.08, 30 nm)/a-SiOx: H (110 nm);
- (2) het passiveren van een achterzijde van een p-type siliciumsubstraat, omvattende:- het bereiden van gehydrogeneerd amorf siliciumoxide (a-SiOx:H) door middel van plasmaversterkte chemische dampdepositie (PECVD);- het bereiden van ultradunne AI2O3 op de a-SiOx:H door atoomlaagdepositie (ALD);- het bereiden van a-SiOx:H op de ultradunne AI2O3 door PECVD; en- het bereiden van a-SiNx:H door PECVD, om een passiveringsfilm te vormen met een vierlaagse gelamineerde structuur van a-SiOx:H (2 iimj/AfiCh (15 nm)/a-SiOx:H (220 nm)/a-SiNx:H (2.08, 80 nm).4. De passivering methode volgens conclusie 3, waarin de stap van het bereiden van a-SiOx:H door PECVD bevat:- het reinigen en inbrengen van een siliciumchip in een grafietkuip;- het neerslaan van een laag a-SiOx:H in een PECVD4>uis door het inbrengen van silaan met een flowsnelheid van 90 sccm en distikstofmonoxide met een flowsnelheid van 3.74.05 slm, waarbij de depositietemperatuur 450°C is, de druk 700-1500 mTor is, het vermogen 1700-2100 watt is en de depositietijd 15-1200 s bedraagt; en- het verwijderen van de siliciumchip na het neerslaan.5. De passivering methode volgens conclusie 3, waarin de stap van het bereiden van a-SiNx:H door PECVD bevat:- het reinigen en inbrengen van een siliciumchip in een grafietkuip;- het neerslaan van een laag a-SiNx:H in een PECVD-buis door het inbrengen van silaan met een flowsnelheid van 500-650 sccm en ammoniak met een flowsnelheid van 3.754.05 slm, waarbij de depositietemperatuur 450°C is, de druk 1500-1600 mTor is, het vermogen 1700 watt is en de depositietijd 350-1100 s bedraagt; en- het verwijderen van de siliciumchip na het neerslaan.6. De passivering methode volgens conclusie 3, waarin de stap van het bereiden van ultradunne AI2O3 door ALD bevat:- het reinigen en het automatisch overbrengen van een siliciumchip van een chipdoos naar een ALD-ruimte;- het neerslaan van een AlOx-film door TMA en H2O met een flowsnelheid van respectievelijk 10 slm en 15 slm, waarin de depositietemperatuur 200°C is en de depositietijd ongeveer 15 s bedraagt; en- het automatische overbrengen van de siliciumchip uit de ALD-ruimte en in een chipdoos na het neerslaan.1/2
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810805787.7A CN109216473B (zh) | 2018-07-20 | 2018-07-20 | 一种晶硅太阳电池的表界面钝化层及其钝化方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| NL2022817A NL2022817A (en) | 2019-05-01 |
| NL2022817B1 true NL2022817B1 (en) | 2019-10-03 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL2022817A NL2022817B1 (en) | 2018-07-20 | 2019-03-27 | Surface/interface passivation layer for high-efficiency crystalline silicon cell and passivation method |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN109216473B (nl) |
| NL (1) | NL2022817B1 (nl) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109935647B (zh) * | 2019-03-29 | 2021-09-14 | 天合光能股份有限公司 | 太阳能电池及其制备方法 |
| CN109950352A (zh) * | 2019-04-23 | 2019-06-28 | 通威太阳能（成都）有限公司 | 一种采用非晶硅钝化层的太阳电池及其制造方法 |
| CN110061101A (zh) * | 2019-05-13 | 2019-07-26 | 山西潞安太阳能科技有限责任公司 | 一种新型高效电池背钝化工艺 |
| CN110112243A (zh) * | 2019-06-02 | 2019-08-09 | 苏州腾晖光伏技术有限公司 | 太阳能电池的背面钝化结构及其制备方法 |
| CN110429020A (zh) * | 2019-06-28 | 2019-11-08 | 湖南红太阳光电科技有限公司 | 一种管式pecvd设备制备非晶硅薄膜的方法 |
| CN110459615A (zh) * | 2019-08-19 | 2019-11-15 | 通威太阳能（成都）有限公司 | 一种复合介电钝化层结构太阳电池及其制备工艺 |
| CN112531034B (zh) * | 2019-08-28 | 2022-10-21 | 泰州隆基乐叶光伏科技有限公司 | 一种太阳能电池、太阳能电池板及制备方法 |
| CN111628044A (zh) * | 2020-04-24 | 2020-09-04 | 一道新能源科技(衢州)有限公司 | 一种硅太阳能电池的表面钝化处理方法和系统 |
| CN111628011A (zh) * | 2020-06-09 | 2020-09-04 | 山西潞安太阳能科技有限责任公司 | 一种新型晶硅双面电池背膜结构及制备方法 |
| CN114759097B (zh) | 2020-12-29 | 2022-10-18 | 浙江晶科能源有限公司 | 太阳能电池及其制备方法、光伏组件 |
| CN112713203A (zh) * | 2021-01-19 | 2021-04-27 | 天合光能股份有限公司 | 一种新型太阳能电池叠层钝化结构 |
| CN113078222B (zh) * | 2021-03-29 | 2023-03-31 | 横店集团东磁股份有限公司 | 一种双面太阳能电池及其制备方法 |
| CN113257927A (zh) * | 2021-05-18 | 2021-08-13 | 横店集团东磁股份有限公司 | 一种perc电池背钝化结构、perc电池及制备方法 |
| CN113571592A (zh) * | 2021-06-30 | 2021-10-29 | 杭州电子科技大学 | 一种薄化晶硅电池及制备方法 |
| CN113552462B (zh) * | 2021-07-08 | 2023-03-14 | 麦斯克电子材料股份有限公司 | 获得n型硅片厚度和测试寿命与体寿命间对应关系的方法 |
| CN115472701B (zh) | 2021-08-20 | 2023-07-07 | 上海晶科绿能企业管理有限公司 | 太阳能电池及光伏组件 |
| CN114203832B (zh) * | 2021-11-29 | 2024-01-30 | 上海交通大学 | 具有钝化接触层并叠加复合钝化层的铸造单晶硅钝化结构 |
| CN114944433A (zh) * | 2022-05-19 | 2022-08-26 | 苏州大学 | 一种晶硅太阳电池表面钝化材料 |
| CN116666236B (zh) * | 2023-08-02 | 2023-11-21 | 深圳市鲁光电子科技有限公司 | 一种半导体材料的表面钝化方法 |
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| TW201824410A (zh) * | 2016-09-16 | 2018-07-01 | 德商中心熱國際股份公司 | 半導體材料之表面的鈍化方法以及半導體基板 |
| CN107256894B (zh) * | 2017-05-18 | 2018-08-10 | 广东爱旭科技股份有限公司 | 管式perc单面太阳能电池及其制备方法和专用设备 |
| CN207233747U (zh) * | 2017-05-31 | 2018-04-13 | 国家电投集团科学技术研究院有限公司 | 硅异质结太阳电池 |
| CN107293604A (zh) * | 2017-07-27 | 2017-10-24 | 浙江晶科能源有限公司 | 一种p型面低反射率晶硅电池的制备方法 |
| CN108231917B (zh) * | 2017-12-20 | 2019-12-17 | 横店集团东磁股份有限公司 | 一种perc太阳能电池及其制备方法 |
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2018
- 2018-07-20 CN CN201810805787.7A patent/CN109216473B/zh active Active
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| Publication number | Publication date |
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| CN109216473B (zh) | 2019-10-11 |
| CN109216473A (zh) | 2019-01-15 |
| NL2022817A (en) | 2019-05-01 |
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