NL2011401C2 - Charged particle optical device. - Google Patents

Charged particle optical device. Download PDF

Info

Publication number
NL2011401C2
NL2011401C2 NL2011401A NL2011401A NL2011401C2 NL 2011401 C2 NL2011401 C2 NL 2011401C2 NL 2011401 A NL2011401 A NL 2011401A NL 2011401 A NL2011401 A NL 2011401A NL 2011401 C2 NL2011401 C2 NL 2011401C2
Authority
NL
Netherlands
Prior art keywords
charged particle
optical device
particle optical
coil
opening
Prior art date
Application number
NL2011401A
Other languages
English (en)
Dutch (nl)
Inventor
Sohail Chatoor
Joost Witteveen
Alon Rosenthal
Johan Joost Koning
Original Assignee
Mapper Lithography Ip Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mapper Lithography Ip Bv filed Critical Mapper Lithography Ip Bv
Priority to NL2011401A priority Critical patent/NL2011401C2/en
Priority to US14/477,769 priority patent/US9111657B2/en
Priority to CN201480049157.1A priority patent/CN105765689B/zh
Priority to PCT/NL2014/050610 priority patent/WO2015034362A1/en
Priority to EP14784383.3A priority patent/EP3042386B1/en
Priority to JP2016540837A priority patent/JP6469699B2/ja
Priority to KR1020227002693A priority patent/KR102554802B1/ko
Priority to TW103130738A priority patent/TWI656555B/zh
Priority to KR1020167009093A priority patent/KR102357144B1/ko
Priority to KR1020237023119A priority patent/KR102780436B1/ko
Application granted granted Critical
Publication of NL2011401C2 publication Critical patent/NL2011401C2/en

Links

Classifications

    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/08—Deviation, concentration or focusing of the beam by electric or magnetic means
    • G21K1/093—Deviation, concentration or focusing of the beam by electric or magnetic means by magnetic means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H01J37/1474—Scanning means
    • H01J37/1475—Scanning means magnetic
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/08—Deviation, concentration or focusing of the beam by electric or magnetic means
    • G21K1/087—Deviation, concentration or focusing of the beam by electric or magnetic means by electrical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F7/00—Magnets
    • H01F7/06—Electromagnets; Actuators including electromagnets
    • H01F2007/068—Electromagnets; Actuators including electromagnets using printed circuit coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/152—Magnetic means
    • H01J2237/1526—For X-Y scanning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31774—Multi-beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electron Beam Exposure (AREA)
NL2011401A 2013-09-06 2013-09-06 Charged particle optical device. NL2011401C2 (en)

Priority Applications (10)

Application Number Priority Date Filing Date Title
NL2011401A NL2011401C2 (en) 2013-09-06 2013-09-06 Charged particle optical device.
US14/477,769 US9111657B2 (en) 2013-09-06 2014-09-04 Charged particle optical device
PCT/NL2014/050610 WO2015034362A1 (en) 2013-09-06 2014-09-05 Charged particle optical device
EP14784383.3A EP3042386B1 (en) 2013-09-06 2014-09-05 Charged particle optical device
CN201480049157.1A CN105765689B (zh) 2013-09-06 2014-09-05 带电粒子光学器件
JP2016540837A JP6469699B2 (ja) 2013-09-06 2014-09-05 荷電粒子光学装置
KR1020227002693A KR102554802B1 (ko) 2013-09-06 2014-09-05 하전 입자 광 디바이스
TW103130738A TWI656555B (zh) 2013-09-06 2014-09-05 帶電粒子光學元件、帶電粒子多重小射束曝光系統以及用於操控帶電粒子小射束的方法
KR1020167009093A KR102357144B1 (ko) 2013-09-06 2014-09-05 하전 입자 광 디바이스
KR1020237023119A KR102780436B1 (ko) 2013-09-06 2014-09-05 하전 입자 광 디바이스

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL2011401 2013-09-06
NL2011401A NL2011401C2 (en) 2013-09-06 2013-09-06 Charged particle optical device.

Publications (1)

Publication Number Publication Date
NL2011401C2 true NL2011401C2 (en) 2015-03-09

Family

ID=50071680

Family Applications (1)

Application Number Title Priority Date Filing Date
NL2011401A NL2011401C2 (en) 2013-09-06 2013-09-06 Charged particle optical device.

Country Status (8)

Country Link
US (1) US9111657B2 (enExample)
EP (1) EP3042386B1 (enExample)
JP (1) JP6469699B2 (enExample)
KR (3) KR102357144B1 (enExample)
CN (1) CN105765689B (enExample)
NL (1) NL2011401C2 (enExample)
TW (1) TWI656555B (enExample)
WO (1) WO2015034362A1 (enExample)

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US9346127B2 (en) 2014-06-20 2016-05-24 Velo3D, Inc. Apparatuses, systems and methods for three-dimensional printing
WO2017015217A2 (en) * 2015-07-20 2017-01-26 Velo3D, Inc. Transfer of particulate material
CN108367498A (zh) 2015-11-06 2018-08-03 维洛3D公司 Adept三维打印
US9931697B2 (en) 2016-02-18 2018-04-03 Velo3D, Inc. Accurate three-dimensional printing
US9981293B2 (en) 2016-04-21 2018-05-29 Mapper Lithography Ip B.V. Method and system for the removal and/or avoidance of contamination in charged particle beam systems
JP6640040B2 (ja) * 2016-06-23 2020-02-05 株式会社ニューフレアテクノロジー 伝熱板および描画装置
US11691343B2 (en) 2016-06-29 2023-07-04 Velo3D, Inc. Three-dimensional printing and three-dimensional printers
US20180095450A1 (en) 2016-09-30 2018-04-05 Velo3D, Inc. Three-dimensional objects and their formation
US20180126650A1 (en) 2016-11-07 2018-05-10 Velo3D, Inc. Gas flow in three-dimensional printing
US20180186080A1 (en) 2017-01-05 2018-07-05 Velo3D, Inc. Optics in three-dimensional printing
US10357829B2 (en) 2017-03-02 2019-07-23 Velo3D, Inc. Three-dimensional printing of three-dimensional objects
US20180281237A1 (en) 2017-03-28 2018-10-04 Velo3D, Inc. Material manipulation in three-dimensional printing
US10272525B1 (en) 2017-12-27 2019-04-30 Velo3D, Inc. Three-dimensional printing systems and methods of their use
US10144176B1 (en) 2018-01-15 2018-12-04 Velo3D, Inc. Three-dimensional printing systems and methods of their use
US10504687B2 (en) * 2018-02-20 2019-12-10 Technische Universiteit Delft Signal separator for a multi-beam charged particle inspection apparatus
KR20230047214A (ko) 2019-07-26 2023-04-06 벨로3디, 인크. 3차원 물체 형상화에 대한 품질 보증
KR102863388B1 (ko) * 2020-03-24 2025-09-24 에이에스엠엘 네델란즈 비.브이. 스택 정렬 기법
US11855463B2 (en) * 2020-12-04 2023-12-26 Spark Connected LLC Wireless power transmission to a mobile device
EP4202970A1 (en) 2021-12-24 2023-06-28 ASML Netherlands B.V. Alignment determination method and computer program

Citations (2)

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Publication number Priority date Publication date Assignee Title
US20060060790A1 (en) * 2003-11-28 2006-03-23 Mamoru Nakasuji System and method for evaluation using electron beam and manufacture of devices
WO2010125526A1 (en) * 2009-04-29 2010-11-04 Mapper Lithography Ip B.V. Charged particle optical system comprising an electrostatic deflector

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JPH03176955A (ja) * 1989-12-05 1991-07-31 Jeol Ltd 走査形電子ビーム装置
JPH04179116A (ja) * 1990-11-09 1992-06-25 Hitachi Ltd 荷電粒子線装置
JP3774953B2 (ja) * 1995-10-19 2006-05-17 株式会社日立製作所 走査形電子顕微鏡
JP3938966B2 (ja) * 1997-02-13 2007-06-27 富士通株式会社 荷電粒子ビーム露光方法及びその露光装置
US6153885A (en) * 1999-06-03 2000-11-28 Nikon Corporation Toroidal charged particle deflector with high mechanical stability and accuracy
JP2003031172A (ja) * 2001-07-16 2003-01-31 Nikon Corp 偏向器とその製造方法、及び荷電粒子露光装置
JP4738723B2 (ja) * 2003-08-06 2011-08-03 キヤノン株式会社 マルチ荷電粒子線描画装置、荷電粒子線の電流の測定方法及びデバイス製造方法
WO2008033671A1 (en) * 2006-09-12 2008-03-20 Novelx, Inc. Integrated deflectors for beam alignment and blanking in charged particle columns
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NL2007392C2 (en) 2011-09-12 2013-03-13 Mapper Lithography Ip Bv Assembly for providing an aligned stack of two or more modules and a lithography system or a microscopy system comprising such an assembly.
NL2006868C2 (en) * 2011-05-30 2012-12-03 Mapper Lithography Ip Bv Charged particle multi-beamlet apparatus.

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060060790A1 (en) * 2003-11-28 2006-03-23 Mamoru Nakasuji System and method for evaluation using electron beam and manufacture of devices
WO2010125526A1 (en) * 2009-04-29 2010-11-04 Mapper Lithography Ip B.V. Charged particle optical system comprising an electrostatic deflector

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JONES G W ET AL: "MICROSTRUCTURES FOR PARTICLE BEAM CONTROL", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B, AVS / AIP, MELVILLE, NEW YORK, NY, US, vol. 6, no. 6, 1 November 1988 (1988-11-01), pages 2023 - 2027, XP000001001, ISSN: 1071-1023, DOI: 10.1116/1.584122 *

Also Published As

Publication number Publication date
KR102554802B1 (ko) 2023-07-13
KR102357144B1 (ko) 2022-01-28
KR20220018072A (ko) 2022-02-14
CN105765689B (zh) 2018-05-18
EP3042386A1 (en) 2016-07-13
TW201532103A (zh) 2015-08-16
KR20160051894A (ko) 2016-05-11
JP6469699B2 (ja) 2019-02-13
CN105765689A (zh) 2016-07-13
US20150069259A1 (en) 2015-03-12
KR20230110651A (ko) 2023-07-24
EP3042386B1 (en) 2017-07-19
WO2015034362A1 (en) 2015-03-12
KR102780436B1 (ko) 2025-03-14
TWI656555B (zh) 2019-04-11
US9111657B2 (en) 2015-08-18
JP2016529684A (ja) 2016-09-23

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RC Pledge established

Free format text: DETAILS LICENCE OR PLEDGE: RIGHT OF PLEDGE, ESTABLISHED

Name of requester: DE STAAT DER NEDERLANDEN / RIJKSDIENST VOOR ONDERN

Effective date: 20180621

PD Change of ownership

Owner name: ASML NETHERLANDS B.V.; NL

Free format text: DETAILS ASSIGNMENT: CHANGE OF OWNER(S), ASSIGNMENT; FORMER OWNER NAME: MAPPER LITHOGRAPHY IP B.V.

Effective date: 20190425