KR102357144B1 - 하전 입자 광 디바이스 - Google Patents

하전 입자 광 디바이스 Download PDF

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Publication number
KR102357144B1
KR102357144B1 KR1020167009093A KR20167009093A KR102357144B1 KR 102357144 B1 KR102357144 B1 KR 102357144B1 KR 1020167009093 A KR1020167009093 A KR 1020167009093A KR 20167009093 A KR20167009093 A KR 20167009093A KR 102357144 B1 KR102357144 B1 KR 102357144B1
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KR
South Korea
Prior art keywords
charged particle
opening
coil
deflector
optical device
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KR1020167009093A
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English (en)
Korean (ko)
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KR20160051894A (ko
Inventor
소해일 샤투
주스트 비테벤
아론 로젠탈
요한 주스트 코닝
Original Assignee
에이에스엠엘 네델란즈 비.브이.
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Application filed by 에이에스엠엘 네델란즈 비.브이. filed Critical 에이에스엠엘 네델란즈 비.브이.
Priority to KR1020227002693A priority Critical patent/KR102554802B1/ko
Publication of KR20160051894A publication Critical patent/KR20160051894A/ko
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Publication of KR102357144B1 publication Critical patent/KR102357144B1/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1471—Arrangements for directing or deflecting the discharge along a desired path for centering, aligning or positioning of ray or beam
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/08—Deviation, concentration or focusing of the beam by electric or magnetic means
    • G21K1/093—Deviation, concentration or focusing of the beam by electric or magnetic means by magnetic means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H01J37/1474—Scanning means
    • H01J37/1475—Scanning means magnetic
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/08—Deviation, concentration or focusing of the beam by electric or magnetic means
    • G21K1/087—Deviation, concentration or focusing of the beam by electric or magnetic means by electrical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1478—Beam tilting means, i.e. for stereoscopy or for beam channelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F7/00—Magnets
    • H01F7/06—Electromagnets; Actuators including electromagnets
    • H01F2007/068—Electromagnets; Actuators including electromagnets using printed circuit coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/152—Magnetic means
    • H01J2237/1526—For X-Y scanning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31774—Multi-beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electron Beam Exposure (AREA)
KR1020167009093A 2013-09-06 2014-09-05 하전 입자 광 디바이스 Active KR102357144B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020227002693A KR102554802B1 (ko) 2013-09-06 2014-09-05 하전 입자 광 디바이스

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361874394P 2013-09-06 2013-09-06
NL2011401A NL2011401C2 (en) 2013-09-06 2013-09-06 Charged particle optical device.
US61/874,394 2013-09-06
NL2011401 2013-09-06
PCT/NL2014/050610 WO2015034362A1 (en) 2013-09-06 2014-09-05 Charged particle optical device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020227002693A Division KR102554802B1 (ko) 2013-09-06 2014-09-05 하전 입자 광 디바이스

Publications (2)

Publication Number Publication Date
KR20160051894A KR20160051894A (ko) 2016-05-11
KR102357144B1 true KR102357144B1 (ko) 2022-01-28

Family

ID=50071680

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020167009093A Active KR102357144B1 (ko) 2013-09-06 2014-09-05 하전 입자 광 디바이스
KR1020237023119A Active KR102780436B1 (ko) 2013-09-06 2014-09-05 하전 입자 광 디바이스
KR1020227002693A Active KR102554802B1 (ko) 2013-09-06 2014-09-05 하전 입자 광 디바이스

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020237023119A Active KR102780436B1 (ko) 2013-09-06 2014-09-05 하전 입자 광 디바이스
KR1020227002693A Active KR102554802B1 (ko) 2013-09-06 2014-09-05 하전 입자 광 디바이스

Country Status (8)

Country Link
US (1) US9111657B2 (enExample)
EP (1) EP3042386B1 (enExample)
JP (1) JP6469699B2 (enExample)
KR (3) KR102357144B1 (enExample)
CN (1) CN105765689B (enExample)
NL (1) NL2011401C2 (enExample)
TW (1) TWI656555B (enExample)
WO (1) WO2015034362A1 (enExample)

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* Cited by examiner, † Cited by third party
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US9486878B2 (en) 2014-06-20 2016-11-08 Velo3D, Inc. Apparatuses, systems and methods for three-dimensional printing
US9662840B1 (en) 2015-11-06 2017-05-30 Velo3D, Inc. Adept three-dimensional printing
WO2017015217A2 (en) * 2015-07-20 2017-01-26 Velo3D, Inc. Transfer of particulate material
US20170239719A1 (en) 2016-02-18 2017-08-24 Velo3D, Inc. Accurate three-dimensional printing
US9981293B2 (en) * 2016-04-21 2018-05-29 Mapper Lithography Ip B.V. Method and system for the removal and/or avoidance of contamination in charged particle beam systems
JP6640040B2 (ja) * 2016-06-23 2020-02-05 株式会社ニューフレアテクノロジー 伝熱板および描画装置
US11691343B2 (en) 2016-06-29 2023-07-04 Velo3D, Inc. Three-dimensional printing and three-dimensional printers
US20180093418A1 (en) 2016-09-30 2018-04-05 Velo3D, Inc. Three-dimensional objects and their formation
WO2018128695A2 (en) 2016-11-07 2018-07-12 Velo3D, Inc. Gas flow in three-dimensional printing
US10611092B2 (en) 2017-01-05 2020-04-07 Velo3D, Inc. Optics in three-dimensional printing
WO2018160807A1 (en) 2017-03-02 2018-09-07 Velo3D, Inc. Three-dimensional printing of three dimensional objects
WO2018183396A1 (en) 2017-03-28 2018-10-04 Velo3D, Inc. Material manipulation in three-dimensional printing
US10272525B1 (en) 2017-12-27 2019-04-30 Velo3D, Inc. Three-dimensional printing systems and methods of their use
US10144176B1 (en) 2018-01-15 2018-12-04 Velo3D, Inc. Three-dimensional printing systems and methods of their use
US10504687B2 (en) * 2018-02-20 2019-12-10 Technische Universiteit Delft Signal separator for a multi-beam charged particle inspection apparatus
EP4003701A4 (en) 2019-07-26 2023-11-08 Velo3d Inc. Quality assurance in formation of three-dimensional objects
KR102863388B1 (ko) * 2020-03-24 2025-09-24 에이에스엠엘 네델란즈 비.브이. 스택 정렬 기법
US11855463B2 (en) * 2020-12-04 2023-12-26 Spark Connected LLC Wireless power transmission to a mobile device
EP4202970A1 (en) 2021-12-24 2023-06-28 ASML Netherlands B.V. Alignment determination method and computer program

Citations (1)

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JP2010113843A (ja) * 2008-11-04 2010-05-20 Shimadzu Corp 荷電粒子ビーム装置及びその対物レンズのコンタミネーション防止装置

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JPH03176955A (ja) * 1989-12-05 1991-07-31 Jeol Ltd 走査形電子ビーム装置
JPH04179116A (ja) * 1990-11-09 1992-06-25 Hitachi Ltd 荷電粒子線装置
JP3774953B2 (ja) * 1995-10-19 2006-05-17 株式会社日立製作所 走査形電子顕微鏡
JP3938966B2 (ja) * 1997-02-13 2007-06-27 富士通株式会社 荷電粒子ビーム露光方法及びその露光装置
US6153885A (en) * 1999-06-03 2000-11-28 Nikon Corporation Toroidal charged particle deflector with high mechanical stability and accuracy
JP2003031172A (ja) * 2001-07-16 2003-01-31 Nikon Corp 偏向器とその製造方法、及び荷電粒子露光装置
JP4738723B2 (ja) * 2003-08-06 2011-08-03 キヤノン株式会社 マルチ荷電粒子線描画装置、荷電粒子線の電流の測定方法及びデバイス製造方法
US7235799B2 (en) * 2003-11-28 2007-06-26 Ebara Corporation System and method for evaluation using electron beam and manufacture of devices
WO2008033671A1 (en) * 2006-09-12 2008-03-20 Novelx, Inc. Integrated deflectors for beam alignment and blanking in charged particle columns
JP2012504309A (ja) * 2008-09-30 2012-02-16 カール ツァイス エヌティーエス エルエルシー 荷電粒子ビームの位置合わせ
NL1036912C2 (en) * 2009-04-29 2010-11-01 Mapper Lithography Ip Bv Charged particle optical system comprising an electrostatic deflector.
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JP5253532B2 (ja) * 2011-03-01 2013-07-31 キヤノン株式会社 偏向器アレイ、偏向器アレイの製造方法、描画装置、および物品の製造方法
NL2007392C2 (en) 2011-09-12 2013-03-13 Mapper Lithography Ip Bv Assembly for providing an aligned stack of two or more modules and a lithography system or a microscopy system comprising such an assembly.
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JP2010113843A (ja) * 2008-11-04 2010-05-20 Shimadzu Corp 荷電粒子ビーム装置及びその対物レンズのコンタミネーション防止装置

Also Published As

Publication number Publication date
KR20160051894A (ko) 2016-05-11
US9111657B2 (en) 2015-08-18
KR102780436B1 (ko) 2025-03-14
JP2016529684A (ja) 2016-09-23
US20150069259A1 (en) 2015-03-12
WO2015034362A1 (en) 2015-03-12
TWI656555B (zh) 2019-04-11
NL2011401C2 (en) 2015-03-09
EP3042386B1 (en) 2017-07-19
CN105765689A (zh) 2016-07-13
EP3042386A1 (en) 2016-07-13
KR20230110651A (ko) 2023-07-24
KR20220018072A (ko) 2022-02-14
TW201532103A (zh) 2015-08-16
KR102554802B1 (ko) 2023-07-13
CN105765689B (zh) 2018-05-18
JP6469699B2 (ja) 2019-02-13

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