NL194354B - Werkwijze voor het vervaardigen van een monolitische ge´ntegreerde schakeling met ten minste ÚÚn CMOS-veldeffecttransistor en ÚÚn bipolaire npn-transistor. - Google Patents
Werkwijze voor het vervaardigen van een monolitische ge´ntegreerde schakeling met ten minste ÚÚn CMOS-veldeffecttransistor en ÚÚn bipolaire npn-transistor.Info
- Publication number
- NL194354B NL194354B NL9400337A NL9400337A NL194354B NL 194354 B NL194354 B NL 194354B NL 9400337 A NL9400337 A NL 9400337A NL 9400337 A NL9400337 A NL 9400337A NL 194354 B NL194354 B NL 194354B
- Authority
- NL
- Netherlands
- Prior art keywords
- manufacturing
- integrated circuit
- field effect
- monolithic integrated
- bipolar npn
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8248—Combination of bipolar and field-effect technology
- H01L21/8249—Bipolar and MOS technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE4306932 | 1993-03-05 | ||
DE4306932 | 1993-03-05 | ||
DE4319437 | 1993-06-11 | ||
DE4319437A DE4319437C1 (de) | 1993-03-05 | 1993-06-11 | Verfahren zur Herstellung einer monolithisch integrierten Schaltung mit mindestens einem CMOS-Feldeffekttransistor und einem npn-Bipolar-Transistor |
US08/371,756 US5525825A (en) | 1993-03-05 | 1995-01-12 | Monolithic integrated circuit with at least one CMOS field-effect transistor and one npn bipolar transistor |
US37175695 | 1995-01-12 |
Publications (3)
Publication Number | Publication Date |
---|---|
NL9400337A NL9400337A (nl) | 1994-10-03 |
NL194354B true NL194354B (nl) | 2001-09-03 |
NL194354C NL194354C (nl) | 2002-01-04 |
Family
ID=27204834
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL9400337A NL194354C (nl) | 1993-03-05 | 1994-03-04 | Werkwijze voor het vervaardigen van een monolitische ge´ntegreerde schakeling met ten minste ÚÚn CMOS-veldeffecttransistor en ÚÚn bipolaire npn-transistor. |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP3426327B2 (nl) |
FR (1) | FR2702307B1 (nl) |
NL (1) | NL194354C (nl) |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0270703B1 (de) * | 1986-12-12 | 1991-12-18 | Deutsche ITT Industries GmbH | Verfahren zum Herstellen einer monolithisch integrierten Schaltung mit mindestens einem bipolaren Planartransistor |
DE68921995T2 (de) * | 1988-01-19 | 1995-12-07 | Nat Semiconductor Corp | Verfahren zum Herstellen eines Polysiliciumemitters und eines Polysiliciumgates durch gleichzeitiges Ätzen von Polysilicium auf einem dünnen Gateoxid. |
-
1994
- 1994-02-25 FR FR9402213A patent/FR2702307B1/fr not_active Expired - Fee Related
- 1994-03-04 NL NL9400337A patent/NL194354C/nl not_active IP Right Cessation
- 1994-03-07 JP JP03611594A patent/JP3426327B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP3426327B2 (ja) | 2003-07-14 |
NL9400337A (nl) | 1994-10-03 |
NL194354C (nl) | 2002-01-04 |
JPH0758227A (ja) | 1995-03-03 |
FR2702307B1 (fr) | 1995-08-18 |
FR2702307A1 (fr) | 1994-09-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2791470B1 (fr) | Circuit integre monolithique incorporant un composant inductif et procede de fabrication d'un tel circuit integre | |
DE69228458T2 (de) | Elektroakustische hybride integrierte Schaltung und ihre Herstellungsverfahren | |
DE59309544D1 (de) | Integrierter cmos-halbleiterschaltkreis | |
DE69533678D1 (de) | Technik zur schnellen Übertragung in CMOS integrierte Schaltungen | |
KR900015344A (ko) | 단일의 집적회로칩에 고압 및 저압 cmos 트랜지스터를 형성하는 공정 | |
NL189380C (nl) | Halfgeleiderelement en werkwijze voor het vervaardigen ervan. | |
FR2756104B1 (fr) | Fabrication de circuits integres bipolaires/cmos | |
DE69133429D1 (de) | Integriertes Halbleiter-Schaltkreisbauelement vom MOS-Typ | |
DE69326340T2 (de) | Geräuscharmer pnp-Transistor | |
DE59511096D1 (de) | Integrierte CMOS-Schaltung | |
IT1217104B (it) | Circuito integrato cmos a due alimentazioni con un transistore mos integrato di protezione contro il <<latch-up>>. | |
FR2756103B1 (fr) | Fabrication de circuits integres bipolaires/cmos et d'un condensateur | |
DE69126230T2 (de) | Silizium-Photodiode für monolithisch integrierte Schaltungen und Herstellungsverfahren | |
WO1999021175A3 (en) | Integrated circuit layout methods and layout structures | |
DE69429979T2 (de) | Halbleiterintegriertes Schaltungsbauelement | |
NL194417B (nl) | Ge´ntegreerde halfgeleiderschakeling. | |
DE69528798D1 (de) | CMOS-Halbleiterbauelement und Herstellungsverfahren | |
IT1244053B (it) | Dispositivo di memoria a semiconduttore altamente integrato e suo metodo di fabbricazione. | |
EP0595018A3 (de) | Monolithisch integriertes MOS-Endstufenbauteil mit einer Übertemperatur-Schutzeinrichtung. | |
EP0646929A3 (en) | Bipolar integrated semiconductor circuit implemented with field effect transistors with a stable sensing amplifier. | |
DE69523292D1 (de) | Integrierte Halbleiterschaltung bestehend aus bipolaren Transistoren und MOS Transistoren und dazugehöriges Herstellungsverfahren | |
DE69836947D1 (de) | Verbindung zwischen MOS-Transistor und Kapazität | |
DE69527030D1 (de) | Integrierte Verstärkerschaltung mit mehreren komplementären Stufen | |
NL194354B (nl) | Werkwijze voor het vervaardigen van een monolitische ge´ntegreerde schakeling met ten minste ÚÚn CMOS-veldeffecttransistor en ÚÚn bipolaire npn-transistor. | |
DE69113673D1 (de) | Halbleiterbauelement mit MOS-Transistoren und Verfahren zu dessen Herstellung. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
BC | A request for examination has been filed | ||
DNT | Communications of changes of names of applicants whose applications have been laid open to public inspection |
Free format text: MICRONAS INTERMETALL GMBH |
|
DNT | Communications of changes of names of applicants whose applications have been laid open to public inspection |
Free format text: MICRONAS GMBH |
|
V1 | Lapsed because of non-payment of the annual fee |
Effective date: 20071001 |