NL194354B - A method of manufacturing a monolithic integrated circuit having at least one CMOS field effect transistor and one bipolar npn transistor. - Google Patents
A method of manufacturing a monolithic integrated circuit having at least one CMOS field effect transistor and one bipolar npn transistor.Info
- Publication number
- NL194354B NL194354B NL9400337A NL9400337A NL194354B NL 194354 B NL194354 B NL 194354B NL 9400337 A NL9400337 A NL 9400337A NL 9400337 A NL9400337 A NL 9400337A NL 194354 B NL194354 B NL 194354B
- Authority
- NL
- Netherlands
- Prior art keywords
- manufacturing
- integrated circuit
- field effect
- monolithic integrated
- bipolar npn
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising semiconducting material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8248—Combination of bipolar and field-effect technology
- H01L21/8249—Bipolar and MOS technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE4306932 | 1993-03-05 | ||
DE4306932 | 1993-03-05 | ||
DE4319437A DE4319437C1 (en) | 1993-03-05 | 1993-06-11 | BiCMOS monolithic IC mfr. - avoids need for epitaxial and buried layers |
DE4319437 | 1993-06-11 | ||
US37175695 | 1995-01-12 | ||
US08/371,756 US5525825A (en) | 1993-03-05 | 1995-01-12 | Monolithic integrated circuit with at least one CMOS field-effect transistor and one npn bipolar transistor |
Publications (3)
Publication Number | Publication Date |
---|---|
NL9400337A NL9400337A (en) | 1994-10-03 |
NL194354B true NL194354B (en) | 2001-09-03 |
NL194354C NL194354C (en) | 2002-01-04 |
Family
ID=27204834
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL9400337A NL194354C (en) | 1993-03-05 | 1994-03-04 | Method for manufacturing a monolithic integrated circuit with at least one CMOS field effect transistor and one bipolar npn transistor. |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP3426327B2 (en) |
FR (1) | FR2702307B1 (en) |
NL (1) | NL194354C (en) |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3683054D1 (en) * | 1986-12-12 | 1992-01-30 | Itt Ind Gmbh Deutsche | METHOD FOR PRODUCING A MONOLITHICALLY INTEGRATED CIRCUIT WITH AT LEAST ONE BIPOLAR PLANAR TRANSISTOR. |
DE68921995T2 (en) * | 1988-01-19 | 1995-12-07 | Nat Semiconductor Corp | Method of manufacturing a polysilicon emitter and a polysilicon gate by simultaneously etching polysilicon on a thin gate oxide. |
-
1994
- 1994-02-25 FR FR9402213A patent/FR2702307B1/en not_active Expired - Fee Related
- 1994-03-04 NL NL9400337A patent/NL194354C/en not_active IP Right Cessation
- 1994-03-07 JP JP03611594A patent/JP3426327B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
NL194354C (en) | 2002-01-04 |
FR2702307A1 (en) | 1994-09-09 |
JPH0758227A (en) | 1995-03-03 |
NL9400337A (en) | 1994-10-03 |
FR2702307B1 (en) | 1995-08-18 |
JP3426327B2 (en) | 2003-07-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
BC | A request for examination has been filed | ||
DNT | Communications of changes of names of applicants whose applications have been laid open to public inspection |
Free format text: MICRONAS INTERMETALL GMBH |
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DNT | Communications of changes of names of applicants whose applications have been laid open to public inspection |
Free format text: MICRONAS GMBH |
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V1 | Lapsed because of non-payment of the annual fee |
Effective date: 20071001 |