NL180884C - Inrichting voor het moduleren van optische straling. - Google Patents
Inrichting voor het moduleren van optische straling.Info
- Publication number
- NL180884C NL180884C NLAANVRAGE7214587,A NL7214587A NL180884C NL 180884 C NL180884 C NL 180884C NL 7214587 A NL7214587 A NL 7214587A NL 180884 C NL180884 C NL 180884C
- Authority
- NL
- Netherlands
- Prior art keywords
- optical radiation
- modulating optical
- modulating
- radiation
- optical
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 title 1
- 230000005855 radiation Effects 0.000 title 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/0151—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the refractive index
- G02F1/0154—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the refractive index using electro-optic effects, e.g. linear electro optic [LEO], Pockels, quadratic electro optical [QEO] or Kerr effect
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/0155—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption
- G02F1/0157—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption using electro-absorption effects, e.g. Franz-Keldysh [FK] effect or quantum confined stark effect [QCSE]
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/07—Polarisation dependent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/065—Gp III-V generic compounds-processing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/067—Graded energy gap
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/107—Melt
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
- Optical Integrated Circuits (AREA)
- Lasers (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US19328671A | 1971-10-28 | 1971-10-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
NL7214587A NL7214587A (nl) | 1973-05-02 |
NL180884C true NL180884C (nl) | 1987-05-04 |
Family
ID=22712989
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NLAANVRAGE7214587,A NL180884C (nl) | 1971-10-28 | 1972-10-27 | Inrichting voor het moduleren van optische straling. |
Country Status (11)
Country | Link |
---|---|
US (1) | US3748597A (nl) |
JP (1) | JPS5618925B2 (nl) |
AU (1) | AU467120B2 (nl) |
BE (1) | BE790590A (nl) |
CA (1) | CA968880A (nl) |
DE (1) | DE2252247C2 (nl) |
FR (1) | FR2158328B1 (nl) |
GB (1) | GB1406496A (nl) |
IT (1) | IT975403B (nl) |
NL (1) | NL180884C (nl) |
SE (1) | SE379101B (nl) |
Families Citing this family (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3865646A (en) * | 1972-09-25 | 1975-02-11 | Bell Telephone Labor Inc | Dielectric optical waveguides and technique for fabricating same |
US3959036A (en) * | 1973-12-03 | 1976-05-25 | Bell Telephone Laboratories, Incorporated | Method for the production of a germanium doped gas contact layer |
DE2403501C3 (de) * | 1974-01-25 | 1979-02-22 | Fa. Carl Zeiss, 7920 Heidenheim | Verfahren zur Regelung der Phasenanpassung einer kohärenten Sekundärstrahlung in einem nichtlinearen Kristall |
US3993963A (en) * | 1974-06-20 | 1976-11-23 | Bell Telephone Laboratories, Incorporated | Heterostructure devices, a light guiding layer having contiguous zones of different thickness and bandgap and method of making same |
US3970364A (en) * | 1974-08-20 | 1976-07-20 | The Curators Of The University Of Missouri | Depletion layer laser beam modulator and deflector |
CA1007737A (en) * | 1974-09-17 | 1977-03-29 | Northern Electric Company | Semiconductor optical modulator |
CA1005556A (en) * | 1974-09-17 | 1977-02-15 | Northern Electric Company Limited | Monolithic light-emitting diode and modulator |
US3940289A (en) * | 1975-02-03 | 1976-02-24 | The United States Of America As Represented By The Secretary Of The Navy | Flash melting method for producing new impurity distributions in solids |
US3995155A (en) * | 1975-06-06 | 1976-11-30 | The United States Of America As Represented By The Secretary Of The Navy | Integrated optical data bus coupler |
JPS5941167B2 (ja) * | 1975-08-09 | 1984-10-05 | 日本電信電話株式会社 | 光変調器 |
US4093345A (en) * | 1976-05-27 | 1978-06-06 | Bell Telephone Laboratories, Incorporated | Semiconductor rib waveguide optical modulator with heterojunction control electrode cladding |
JPS561013A (en) * | 1979-06-18 | 1981-01-08 | Furukawa Electric Co Ltd:The | Filter of controllable transmission characteristic |
US4865427A (en) * | 1981-01-12 | 1989-09-12 | Massachusetts Institute Of Technology | Spatial light modulator |
DE3210980C2 (de) * | 1981-04-01 | 1986-11-20 | Nippon Telegraph And Telephone Corp., Tokio/Tokyo | Optisches Schaltelement und optische Schaltmatrix |
US4558449A (en) * | 1983-07-08 | 1985-12-10 | At&T Bell Laboratories | Semiconductor laser with coupled loss modulator for optical telecommunications |
DE3337492A1 (de) * | 1983-10-13 | 1985-04-25 | Heinrich-Hertz-Institut für Nachrichtentechnik Berlin GmbH, 1000 Berlin | Elektro-optisches halbleiter-bauelement mit einer lichtwellen fuehrenden schicht und seine verwendung als elektro-optischer modulator |
GB8331298D0 (en) * | 1983-11-23 | 1983-12-29 | British Telecomm | Optical devices |
FR2558271A1 (fr) * | 1983-12-02 | 1985-07-19 | Carenco Alain | Coupleur directif electro-optique a double heterostructure et a rubans |
GB2182158A (en) * | 1985-10-02 | 1987-05-07 | Plessey Co Plc | Electro-optical waveguide |
GB8525593D0 (en) * | 1985-10-17 | 1985-11-20 | British Telecomm | Electro-optic devices |
JPS62260120A (ja) * | 1986-05-07 | 1987-11-12 | Kokusai Denshin Denwa Co Ltd <Kdd> | 半導体外部光変調器 |
US4794351A (en) * | 1986-09-29 | 1988-12-27 | American Telephone And Telegraph Company, At&T Bell Laboratories | Optical mixer for upconverting or downconverting an optical signal |
US4789843A (en) * | 1987-07-28 | 1988-12-06 | Hicks John W | Laser diode optical modulating devices |
GB8821863D0 (en) * | 1988-09-03 | 1989-05-17 | Emi Plc Thorn | Infra-red radiation modifier |
JPH0340252A (ja) * | 1989-04-19 | 1991-02-21 | Olympus Optical Co Ltd | 光磁気記録媒体の位相差測定装置 |
US5287212A (en) * | 1989-09-07 | 1994-02-15 | Cox Charles H | Optical link |
JPH06235889A (ja) * | 1993-02-12 | 1994-08-23 | Mitsubishi Electric Corp | 半導体光強度変調器及びその製造方法 |
FR2707766B1 (fr) * | 1993-07-02 | 1995-12-08 | Fabrice Devaux | Modulateur électroabsorbant et générateur d'impulsions optiques le comportant. |
EP1233298A1 (en) | 2001-02-16 | 2002-08-21 | Agilent Technologies, Inc. (a Delaware corporation) | A light modulating device |
US6917426B2 (en) * | 2002-01-29 | 2005-07-12 | The Boeing Company | Real-time wavefront sensor system |
US8930310B2 (en) * | 2007-11-27 | 2015-01-06 | The Boeing Company | Proxy server for distributing aircraft software parts |
US8442751B2 (en) * | 2007-11-27 | 2013-05-14 | The Boeing Company | Onboard electronic distribution system |
US20090138873A1 (en) * | 2007-11-27 | 2009-05-28 | The Boeing Company | Method and Apparatus for Loadable Aircraft Software Parts Distribution |
US8490074B2 (en) | 2007-11-27 | 2013-07-16 | The Boeing Company | Aircraft software part library |
US8185609B2 (en) * | 2007-11-27 | 2012-05-22 | The Boeing Company | Method and apparatus for processing commands in an aircraft network |
US9208308B2 (en) | 2007-11-27 | 2015-12-08 | The Boeing Company | Alternate parts signature list file |
US7764850B2 (en) * | 2008-01-25 | 2010-07-27 | Hewlett-Packard Development Company, L.P. | Optical modulator including electrically controlled ring resonator |
US8321083B2 (en) * | 2008-01-30 | 2012-11-27 | The Boeing Company | Aircraft maintenance laptop |
KR101252747B1 (ko) * | 2009-09-01 | 2013-04-11 | 한국전자통신연구원 | 광전 소자 |
US10102687B1 (en) | 2010-08-17 | 2018-10-16 | The Boeing Company | Information management system for ground vehicles |
US9237022B2 (en) | 2013-05-07 | 2016-01-12 | The Boeing Company | Use of multiple digital signatures and quorum rules to verify aircraft information |
US9160543B2 (en) | 2013-05-07 | 2015-10-13 | The Boeing Company | Verification of aircraft information in response to compromised digital certificate |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL269289A (nl) * | 1961-09-15 | |||
US3299106A (en) * | 1964-06-01 | 1967-01-17 | Syntex Corp | Process for the preparation of uncontaminated 17alpha-ethynyl-19-nor-delta4-androsten-17beta-ol-3-one |
US3462211A (en) * | 1965-09-22 | 1969-08-19 | Bell Telephone Labor Inc | Semiconductor junction electro-optic light modulator |
US3611207A (en) * | 1970-01-05 | 1971-10-05 | Carl N Klahr | Wide aperture electrooptic modulator |
-
0
- BE BE790590D patent/BE790590A/xx not_active IP Right Cessation
-
1971
- 1971-10-28 US US00193286A patent/US3748597A/en not_active Expired - Lifetime
-
1972
- 1972-06-08 CA CA144,225A patent/CA968880A/en not_active Expired
- 1972-10-24 AU AU48098/72A patent/AU467120B2/en not_active Expired
- 1972-10-25 DE DE2252247A patent/DE2252247C2/de not_active Expired
- 1972-10-25 GB GB4918472A patent/GB1406496A/en not_active Expired
- 1972-10-25 SE SE7213774A patent/SE379101B/xx unknown
- 1972-10-26 JP JP10675472A patent/JPS5618925B2/ja not_active Expired
- 1972-10-27 NL NLAANVRAGE7214587,A patent/NL180884C/nl not_active IP Right Cessation
- 1972-10-27 FR FR7238297A patent/FR2158328B1/fr not_active Expired
- 1972-10-27 IT IT70403/72A patent/IT975403B/it active
Also Published As
Publication number | Publication date |
---|---|
DE2252247C2 (de) | 1982-04-22 |
NL7214587A (nl) | 1973-05-02 |
FR2158328B1 (nl) | 1975-10-24 |
US3748597A (en) | 1973-07-24 |
JPS5618925B2 (nl) | 1981-05-02 |
GB1406496A (en) | 1975-09-17 |
CA968880A (en) | 1975-06-03 |
AU467120B2 (en) | 1975-11-20 |
IT975403B (it) | 1974-07-20 |
AU4809872A (en) | 1974-04-26 |
DE2252247A1 (de) | 1973-05-03 |
BE790590A (fr) | 1973-02-15 |
SE379101B (nl) | 1975-09-22 |
JPS4852250A (nl) | 1973-07-23 |
FR2158328A1 (nl) | 1973-06-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
BA | A request for search or an international-type search has been filed | ||
BB | A search report has been drawn up | ||
BC | A request for examination has been filed | ||
A85 | Still pending on 85-01-01 | ||
V4 | Discontinued because of reaching the maximum lifetime of a patent |