SE379101B - - Google Patents

Info

Publication number
SE379101B
SE379101B SE7213774A SE1377472A SE379101B SE 379101 B SE379101 B SE 379101B SE 7213774 A SE7213774 A SE 7213774A SE 1377472 A SE1377472 A SE 1377472A SE 379101 B SE379101 B SE 379101B
Authority
SE
Sweden
Application number
SE7213774A
Inventor
F K Reinhart
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of SE379101B publication Critical patent/SE379101B/xx

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/0151—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the refractive index
    • G02F1/0154—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the refractive index using electro-optic effects, e.g. linear electro optic [LEO], Pockels, quadratic electro optical [QEO] or Kerr effect
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/0155—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption
    • G02F1/0157—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption using electro-absorption effects, e.g. Franz-Keldysh [FK] effect or quantum confined stark effect [QCSE]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2203/00—Function characteristic
    • G02F2203/07—Polarisation dependent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/067—Graded energy gap
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
  • Optical Integrated Circuits (AREA)
  • Lasers (AREA)
  • Led Devices (AREA)
SE7213774A 1971-10-28 1972-10-25 SE379101B (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US19328671A 1971-10-28 1971-10-28

Publications (1)

Publication Number Publication Date
SE379101B true SE379101B (xx) 1975-09-22

Family

ID=22712989

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7213774A SE379101B (xx) 1971-10-28 1972-10-25

Country Status (11)

Country Link
US (1) US3748597A (xx)
JP (1) JPS5618925B2 (xx)
AU (1) AU467120B2 (xx)
BE (1) BE790590A (xx)
CA (1) CA968880A (xx)
DE (1) DE2252247C2 (xx)
FR (1) FR2158328B1 (xx)
GB (1) GB1406496A (xx)
IT (1) IT975403B (xx)
NL (1) NL180884C (xx)
SE (1) SE379101B (xx)

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US3865646A (en) * 1972-09-25 1975-02-11 Bell Telephone Labor Inc Dielectric optical waveguides and technique for fabricating same
US3959036A (en) * 1973-12-03 1976-05-25 Bell Telephone Laboratories, Incorporated Method for the production of a germanium doped gas contact layer
DE2403501C3 (de) * 1974-01-25 1979-02-22 Fa. Carl Zeiss, 7920 Heidenheim Verfahren zur Regelung der Phasenanpassung einer kohärenten Sekundärstrahlung in einem nichtlinearen Kristall
US3993963A (en) * 1974-06-20 1976-11-23 Bell Telephone Laboratories, Incorporated Heterostructure devices, a light guiding layer having contiguous zones of different thickness and bandgap and method of making same
US3970364A (en) * 1974-08-20 1976-07-20 The Curators Of The University Of Missouri Depletion layer laser beam modulator and deflector
CA1007737A (en) * 1974-09-17 1977-03-29 Northern Electric Company Semiconductor optical modulator
CA1005556A (en) * 1974-09-17 1977-02-15 Northern Electric Company Limited Monolithic light-emitting diode and modulator
US3940289A (en) * 1975-02-03 1976-02-24 The United States Of America As Represented By The Secretary Of The Navy Flash melting method for producing new impurity distributions in solids
US3995155A (en) * 1975-06-06 1976-11-30 The United States Of America As Represented By The Secretary Of The Navy Integrated optical data bus coupler
JPS5941167B2 (ja) * 1975-08-09 1984-10-05 日本電信電話株式会社 光変調器
US4093345A (en) * 1976-05-27 1978-06-06 Bell Telephone Laboratories, Incorporated Semiconductor rib waveguide optical modulator with heterojunction control electrode cladding
JPS561013A (en) * 1979-06-18 1981-01-08 Furukawa Electric Co Ltd:The Filter of controllable transmission characteristic
US4865427A (en) * 1981-01-12 1989-09-12 Massachusetts Institute Of Technology Spatial light modulator
DE3210980C2 (de) * 1981-04-01 1986-11-20 Nippon Telegraph And Telephone Corp., Tokio/Tokyo Optisches Schaltelement und optische Schaltmatrix
US4558449A (en) * 1983-07-08 1985-12-10 At&T Bell Laboratories Semiconductor laser with coupled loss modulator for optical telecommunications
DE3337492A1 (de) * 1983-10-13 1985-04-25 Heinrich-Hertz-Institut für Nachrichtentechnik Berlin GmbH, 1000 Berlin Elektro-optisches halbleiter-bauelement mit einer lichtwellen fuehrenden schicht und seine verwendung als elektro-optischer modulator
GB8331298D0 (en) * 1983-11-23 1983-12-29 British Telecomm Optical devices
FR2558271A1 (fr) * 1983-12-02 1985-07-19 Carenco Alain Coupleur directif electro-optique a double heterostructure et a rubans
GB2182158A (en) * 1985-10-02 1987-05-07 Plessey Co Plc Electro-optical waveguide
GB8525593D0 (en) * 1985-10-17 1985-11-20 British Telecomm Electro-optic devices
JPS62260120A (ja) * 1986-05-07 1987-11-12 Kokusai Denshin Denwa Co Ltd <Kdd> 半導体外部光変調器
US4794351A (en) * 1986-09-29 1988-12-27 American Telephone And Telegraph Company, At&T Bell Laboratories Optical mixer for upconverting or downconverting an optical signal
US4789843A (en) * 1987-07-28 1988-12-06 Hicks John W Laser diode optical modulating devices
GB8821863D0 (en) * 1988-09-03 1989-05-17 Emi Plc Thorn Infra-red radiation modifier
JPH0340252A (ja) * 1989-04-19 1991-02-21 Olympus Optical Co Ltd 光磁気記録媒体の位相差測定装置
US5287212A (en) * 1989-09-07 1994-02-15 Cox Charles H Optical link
JPH06235889A (ja) * 1993-02-12 1994-08-23 Mitsubishi Electric Corp 半導体光強度変調器及びその製造方法
FR2707766B1 (fr) * 1993-07-02 1995-12-08 Fabrice Devaux Modulateur électroabsorbant et générateur d'impulsions optiques le comportant.
EP1233298A1 (en) 2001-02-16 2002-08-21 Agilent Technologies, Inc. (a Delaware corporation) A light modulating device
US6917426B2 (en) * 2002-01-29 2005-07-12 The Boeing Company Real-time wavefront sensor system
US8930310B2 (en) * 2007-11-27 2015-01-06 The Boeing Company Proxy server for distributing aircraft software parts
US8442751B2 (en) * 2007-11-27 2013-05-14 The Boeing Company Onboard electronic distribution system
US20090138873A1 (en) * 2007-11-27 2009-05-28 The Boeing Company Method and Apparatus for Loadable Aircraft Software Parts Distribution
US8490074B2 (en) 2007-11-27 2013-07-16 The Boeing Company Aircraft software part library
US8185609B2 (en) * 2007-11-27 2012-05-22 The Boeing Company Method and apparatus for processing commands in an aircraft network
US9208308B2 (en) 2007-11-27 2015-12-08 The Boeing Company Alternate parts signature list file
US7764850B2 (en) * 2008-01-25 2010-07-27 Hewlett-Packard Development Company, L.P. Optical modulator including electrically controlled ring resonator
US8321083B2 (en) * 2008-01-30 2012-11-27 The Boeing Company Aircraft maintenance laptop
KR101252747B1 (ko) * 2009-09-01 2013-04-11 한국전자통신연구원 광전 소자
US10102687B1 (en) 2010-08-17 2018-10-16 The Boeing Company Information management system for ground vehicles
US9237022B2 (en) 2013-05-07 2016-01-12 The Boeing Company Use of multiple digital signatures and quorum rules to verify aircraft information
US9160543B2 (en) 2013-05-07 2015-10-13 The Boeing Company Verification of aircraft information in response to compromised digital certificate

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NL269289A (xx) * 1961-09-15
US3299106A (en) * 1964-06-01 1967-01-17 Syntex Corp Process for the preparation of uncontaminated 17alpha-ethynyl-19-nor-delta4-androsten-17beta-ol-3-one
US3462211A (en) * 1965-09-22 1969-08-19 Bell Telephone Labor Inc Semiconductor junction electro-optic light modulator
US3611207A (en) * 1970-01-05 1971-10-05 Carl N Klahr Wide aperture electrooptic modulator

Also Published As

Publication number Publication date
DE2252247C2 (de) 1982-04-22
NL7214587A (xx) 1973-05-02
FR2158328B1 (xx) 1975-10-24
US3748597A (en) 1973-07-24
JPS5618925B2 (xx) 1981-05-02
GB1406496A (en) 1975-09-17
CA968880A (en) 1975-06-03
AU467120B2 (en) 1975-11-20
IT975403B (it) 1974-07-20
NL180884C (nl) 1987-05-04
AU4809872A (en) 1974-04-26
DE2252247A1 (de) 1973-05-03
BE790590A (fr) 1973-02-15
JPS4852250A (xx) 1973-07-23
FR2158328A1 (xx) 1973-06-15

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