NL183858C - Beeldopneeminrichting van het ladingsgekoppelde type. - Google Patents

Beeldopneeminrichting van het ladingsgekoppelde type.

Info

Publication number
NL183858C
NL183858C NLAANVRAGE7200180,A NL7200180A NL183858C NL 183858 C NL183858 C NL 183858C NL 7200180 A NL7200180 A NL 7200180A NL 183858 C NL183858 C NL 183858C
Authority
NL
Netherlands
Prior art keywords
load
recording device
image recording
connected type
type
Prior art date
Application number
NLAANVRAGE7200180,A
Other languages
English (en)
Other versions
NL7200180A (nl
NL183858B (nl
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of NL7200180A publication Critical patent/NL7200180A/xx
Publication of NL183858B publication Critical patent/NL183858B/nl
Application granted granted Critical
Publication of NL183858C publication Critical patent/NL183858C/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/287—Organisation of a multiplicity of shift registers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/1057—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices [CCD] or charge injection devices [CID]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
NLAANVRAGE7200180,A 1971-04-06 1972-01-06 Beeldopneeminrichting van het ladingsgekoppelde type. NL183858C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US131679A US3890633A (en) 1971-04-06 1971-04-06 Charge-coupled circuits

Publications (3)

Publication Number Publication Date
NL7200180A NL7200180A (nl) 1972-10-10
NL183858B NL183858B (nl) 1988-09-01
NL183858C true NL183858C (nl) 1989-02-01

Family

ID=22450539

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7200180,A NL183858C (nl) 1971-04-06 1972-01-06 Beeldopneeminrichting van het ladingsgekoppelde type.

Country Status (7)

Country Link
US (1) US3890633A (nl)
JP (2) JPS54622B1 (nl)
CA (1) CA1024255A (nl)
DE (1) DE2200455C3 (nl)
FR (1) FR2131939B1 (nl)
GB (3) GB1377523A (nl)
NL (1) NL183858C (nl)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1442841A (en) * 1973-11-13 1976-07-14 Secr Defence Charge coupled devices
US4031315A (en) * 1974-09-27 1977-06-21 Siemens Aktiengesellschaft Solid body image sensor having charge coupled semiconductor charge shift elements and method of operation
US3983395A (en) * 1974-11-29 1976-09-28 General Electric Company MIS structures for background rejection in infrared imaging devices
US4011548A (en) * 1975-07-02 1977-03-08 Burroughs Corporation Three phase charge-coupled device memory with inhibit lines
JPS5518064A (en) * 1978-07-26 1980-02-07 Sony Corp Charge trsnsfer device
US4225947A (en) * 1978-12-29 1980-09-30 International Business Machines Corporation Three phase line-addressable serial-parallel-serial storage array
JPS6055295U (ja) * 1983-09-21 1985-04-18 フジテック株式会社 機械式立体駐車装置の起動装置
JPH0652786B2 (ja) * 1986-05-13 1994-07-06 三菱電機株式会社 固体撮像素子
US5060245A (en) * 1990-06-29 1991-10-22 The United States Of America As Represented By The Secretary Of The Air Force Interline transfer CCD image sensing apparatus
JP3123068B2 (ja) * 1990-09-05 2001-01-09 ソニー株式会社 固体撮像装置
JP2604905B2 (ja) * 1990-11-29 1997-04-30 宇宙開発事業団 固体撮像装置
JPH06268192A (ja) * 1993-03-12 1994-09-22 Toshiba Corp 固体撮像装置
DE69428394T2 (de) * 1993-05-21 2002-07-04 Koninkl Philips Electronics Nv Ladungsgekoppelte Bildaufnahmeanordnung
JP4249433B2 (ja) * 2002-05-15 2009-04-02 Ｎｅｃエレクトロニクス株式会社 電荷転送素子及びその製造方法
US8717469B2 (en) * 2010-02-03 2014-05-06 Microsoft Corporation Fast gating photosurface

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL155155B (nl) * 1968-04-23 1977-11-15 Philips Nv Inrichting voor het omzetten van een fysisch patroon in een elektrisch signaal als functie van de tijd, daarmede uitgevoerde televisiecamera, alsmede halfgeleiderinrichting voor toepassing daarin.
US3651349A (en) * 1970-02-16 1972-03-21 Bell Telephone Labor Inc Monolithic semiconductor apparatus adapted for sequential charge transfer
US3654499A (en) * 1970-06-24 1972-04-04 Bell Telephone Labor Inc Charge coupled memory with storage sites
US3683193A (en) * 1970-10-26 1972-08-08 Rca Corp Bucket brigade scanning of sensor array

Also Published As

Publication number Publication date
FR2131939B1 (nl) 1980-04-18
DE2200455B2 (de) 1975-01-09
US3890633A (en) 1975-06-17
GB1377522A (en) 1974-12-18
JPS5333593A (en) 1978-03-29
DE2200455A1 (de) 1972-10-12
NL7200180A (nl) 1972-10-10
GB1377521A (en) 1974-12-18
JPS5347680B2 (nl) 1978-12-22
GB1377523A (en) 1974-12-18
CA1024255A (en) 1978-01-10
DE2200455C3 (de) 1975-08-14
JPS54622B1 (nl) 1979-01-12
NL183858B (nl) 1988-09-01
FR2131939A1 (nl) 1972-11-17

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Legal Events

Date Code Title Description
BB A search report has been drawn up
BC A request for examination has been filed
A85 Still pending on 85-01-01
V4 Discontinued because of reaching the maximum lifetime of a patent