NL174894C - Geintegreerde halfgeleiderschakeling omvattende een als gemeenschappelijk basisgebied van laterale transistoren en als gemeenschappelijk emittergebied van verticale transistoren dienstdoend halfgeleiderlichaam. - Google Patents
Geintegreerde halfgeleiderschakeling omvattende een als gemeenschappelijk basisgebied van laterale transistoren en als gemeenschappelijk emittergebied van verticale transistoren dienstdoend halfgeleiderlichaam.Info
- Publication number
- NL174894C NL174894C NLAANVRAGE7106117,A NL7106117A NL174894C NL 174894 C NL174894 C NL 174894C NL 7106117 A NL7106117 A NL 7106117A NL 174894 C NL174894 C NL 174894C
- Authority
- NL
- Netherlands
- Prior art keywords
- transistors
- common
- area
- circuit containing
- semiconductor body
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
- H03K19/091—Integrated injection logic or merged transistor logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0821—Combination of lateral and vertical transistors only
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2021824A DE2021824C3 (de) | 1970-05-05 | 1970-05-05 | Monolithische Halbleiterschaltung |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| NL7106117A NL7106117A (xx) | 1971-11-09 |
| NL174894B NL174894B (nl) | 1984-03-16 |
| NL174894C true NL174894C (nl) | 1984-08-16 |
Family
ID=5770218
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NLAANVRAGE7106117,A NL174894C (nl) | 1970-05-05 | 1971-05-04 | Geintegreerde halfgeleiderschakeling omvattende een als gemeenschappelijk basisgebied van laterale transistoren en als gemeenschappelijk emittergebied van verticale transistoren dienstdoend halfgeleiderlichaam. |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US3736477A (xx) |
| JP (3) | JPS4935030B1 (xx) |
| BE (1) | BE764990A (xx) |
| BR (1) | BR7102168D0 (xx) |
| CA (1) | CA934070A (xx) |
| CH (1) | CH520407A (xx) |
| DE (1) | DE2021824C3 (xx) |
| ES (1) | ES390380A1 (xx) |
| FR (1) | FR2088338B1 (xx) |
| GB (1) | GB1284257A (xx) |
| NL (1) | NL174894C (xx) |
| SE (1) | SE358052B (xx) |
Families Citing this family (49)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7107040A (xx) * | 1971-05-22 | 1972-11-24 | ||
| DE2212168C2 (de) * | 1972-03-14 | 1982-10-21 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolithisch integrierte Halbleiteranordnung |
| DE2262297C2 (de) * | 1972-12-20 | 1985-11-28 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolithisch integrierbare, logisch verknüpfbare Halbleiterschaltungsanordnung mit I↑2↑L-Aufbau |
| JPS5017180A (xx) * | 1973-06-13 | 1975-02-22 | ||
| US3866066A (en) * | 1973-07-16 | 1975-02-11 | Bell Telephone Labor Inc | Power supply distribution for integrated circuits |
| FR2244262B1 (xx) * | 1973-09-13 | 1978-09-29 | Radiotechnique Compelec | |
| DE2356301C3 (de) * | 1973-11-10 | 1982-03-11 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolithisch integrierte, logische Schaltung |
| US3986199A (en) * | 1974-02-19 | 1976-10-12 | Texas Instruments Incorporated | Bipolar logic having graded power |
| GB1507061A (en) * | 1974-03-26 | 1978-04-12 | Signetics Corp | Semiconductors |
| US3978515A (en) * | 1974-04-26 | 1976-08-31 | Bell Telephone Laboratories, Incorporated | Integrated injection logic using oxide isolation |
| JPS5253464Y2 (xx) * | 1974-05-14 | 1977-12-05 | ||
| JPS5346626B2 (xx) * | 1974-05-15 | 1978-12-15 | ||
| US4065680A (en) * | 1974-07-11 | 1977-12-27 | Signetics Corporation | Collector-up logic transmission gates |
| US3913213A (en) * | 1974-08-02 | 1975-10-21 | Trw Inc | Integrated circuit transistor switch |
| US4199775A (en) * | 1974-09-03 | 1980-04-22 | Bell Telephone Laboratories, Incorporated | Integrated circuit and method for fabrication thereof |
| DE2442716C3 (de) * | 1974-09-06 | 1984-06-20 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Monolithisch integriertes NOR-Gatter |
| JPS5140268U (xx) * | 1974-09-19 | 1976-03-25 | ||
| US3947865A (en) * | 1974-10-07 | 1976-03-30 | Signetics Corporation | Collector-up semiconductor circuit structure for binary logic |
| NL7413264A (nl) * | 1974-10-09 | 1976-04-13 | Philips Nv | Geintegreerde schakeling. |
| US3962717A (en) * | 1974-10-29 | 1976-06-08 | Fairchild Camera And Instrument Corporation | Oxide isolated integrated injection logic with selective guard ring |
| US3982266A (en) * | 1974-12-09 | 1976-09-21 | Texas Instruments Incorporated | Integrated injection logic having high inverse current gain |
| JPS587066B2 (ja) * | 1974-12-23 | 1983-02-08 | 株式会社東芝 | 半導体装置 |
| US4054900A (en) * | 1974-12-27 | 1977-10-18 | Tokyo Shibaura Electric Co., Ltd. | I.I.L. with region connecting base of double diffused injector to substrate/emitter of switching transistor |
| DE2509530C2 (de) * | 1975-03-05 | 1985-05-23 | Ibm Deutschland Gmbh, 7000 Stuttgart | Halbleiteranordnung für die Grundbausteine eines hochintegrierbaren logischen Halbleiterschaltungskonzepts basierend auf Mehrfachkollektor-Umkehrtransistoren |
| US4081822A (en) * | 1975-06-30 | 1978-03-28 | Signetics Corporation | Threshold integrated injection logic |
| DE2530288C3 (de) * | 1975-07-07 | 1982-02-18 | Siemens AG, 1000 Berlin und 8000 München | Inverter in integrierter Injektionslogik |
| DE2554426C3 (de) * | 1975-12-03 | 1979-06-21 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Erzeugung einer lokal hohen inversen Stromverstärkung bei einem Planartransistor sowie nach diesem Verfahren hergestellter invers betriebener Transistor |
| US4084174A (en) * | 1976-02-12 | 1978-04-11 | Fairchild Camera And Instrument Corporation | Graduated multiple collector structure for inverted vertical bipolar transistors |
| DE2612666C2 (de) * | 1976-03-25 | 1982-11-18 | Ibm Deutschland Gmbh, 7000 Stuttgart | Integrierte, invertierende logische Schaltung |
| US4163244A (en) * | 1977-10-28 | 1979-07-31 | General Electric Company | Symmetrical integrated injection logic circuit |
| JPS54127146U (xx) * | 1978-02-25 | 1979-09-05 | ||
| DE2855866C3 (de) * | 1978-12-22 | 1981-10-29 | Ibm Deutschland Gmbh, 7000 Stuttgart | Verfahren und Schaltungsanordnung zum Betreiben eines integrierten Halbleiterspeichers |
| DE2926050C2 (de) * | 1979-06-28 | 1981-10-01 | Ibm Deutschland Gmbh, 7000 Stuttgart | Verfahren und Schaltungsanordnung zum Lesen Und/oder Schreiben eines integrierten Halbleiterspeichers mit Speicherzellen in MTL-Technik |
| DE2926094A1 (de) * | 1979-06-28 | 1981-01-08 | Ibm Deutschland | Verfahren und schaltungsanordnung zum entladen von bitleitungskapazitaeten eines integrierten halbleiterspeichers |
| US4338622A (en) * | 1979-06-29 | 1982-07-06 | International Business Machines Corporation | Self-aligned semiconductor circuits and process therefor |
| DE2926514A1 (de) * | 1979-06-30 | 1981-01-15 | Ibm Deutschland | Elektrische speicheranordnung und verfahren zu ihrem betrieb |
| DE2929384C2 (de) * | 1979-07-20 | 1981-07-30 | Ibm Deutschland Gmbh, 7000 Stuttgart | Nachladeschaltung für einen Halbleiterspeicher |
| DE2943565C2 (de) * | 1979-10-29 | 1981-11-12 | Ibm Deutschland Gmbh, 7000 Stuttgart | Speicherzellennachbildung zur Referenzspannungserzeugung für Halbleiterspeicher in MTL-Technik |
| FR2469049A1 (fr) * | 1979-10-30 | 1981-05-08 | Ibm France | Circuit comportant au moins deux dispositifs semi-conducteurs en technologie mtl presentant des temps de montee differents et circuits logiques en derivant |
| DE2944141A1 (de) * | 1979-11-02 | 1981-05-14 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolithisch integrierte speicheranordnung |
| DE2951945A1 (de) * | 1979-12-22 | 1981-07-02 | Ibm Deutschland Gmbh, 7000 Stuttgart | Schaltungsanordnung zur kapazitiven lesesignalverstaerkung in einem integrierten halbleiterspeicher mit einem intergrierten halbleiterspeicher mit speicherzellen in mtl-technik |
| US4302823A (en) * | 1979-12-27 | 1981-11-24 | International Business Machines Corp. | Differential charge sensing system |
| US4346343A (en) * | 1980-05-16 | 1982-08-24 | International Business Machines Corporation | Power control means for eliminating circuit to circuit delay differences and providing a desired circuit delay |
| US4383216A (en) * | 1981-01-29 | 1983-05-10 | International Business Machines Corporation | AC Measurement means for use with power control means for eliminating circuit to circuit delay differences |
| JPS6058252A (ja) * | 1983-09-07 | 1985-04-04 | Agency Of Ind Science & Technol | 分級方法 |
| EP0166043B1 (en) * | 1984-06-25 | 1990-09-19 | International Business Machines Corporation | Mtl storage cell with inherent output multiplex capability |
| US5068702A (en) * | 1986-03-31 | 1991-11-26 | Exar Corporation | Programmable transistor |
| EP0246371B1 (en) * | 1986-05-22 | 1991-01-09 | International Business Machines Corporation | Integrated injection logic output circuit |
| US5021856A (en) * | 1989-03-15 | 1991-06-04 | Plessey Overseas Limited | Universal cell for bipolar NPN and PNP transistors and resistive elements |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3205373A (en) * | 1962-09-26 | 1965-09-07 | Int Standard Electric Corp | Direct coupled semiconductor solid state circuit having complementary symmetry |
| US3238384A (en) * | 1963-07-31 | 1966-03-01 | Dwight C Lewis | Two terminal triggering circuit comprising complementary transistors with one transistor having emitter operating as collector |
| US3401319A (en) * | 1966-03-08 | 1968-09-10 | Gen Micro Electronics Inc | Integrated latch circuit |
| FR1594824A (xx) * | 1967-12-18 | 1970-06-08 | ||
| DE1764241C3 (de) * | 1968-04-30 | 1978-09-07 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolithisch integrierte Halbleiterschaltung |
-
1970
- 1970-05-05 DE DE2021824A patent/DE2021824C3/de not_active Expired
- 1970-12-29 JP JP45121937A patent/JPS4935030B1/ja active Pending
-
1971
- 1971-03-25 FR FR7111215A patent/FR2088338B1/fr not_active Expired
- 1971-03-30 BE BE764990A patent/BE764990A/xx not_active IP Right Cessation
- 1971-04-13 BR BR2168/71A patent/BR7102168D0/pt unknown
- 1971-04-14 US US00134008A patent/US3736477A/en not_active Expired - Lifetime
- 1971-04-19 GB GB26988/71A patent/GB1284257A/en not_active Expired
- 1971-04-20 ES ES390380A patent/ES390380A1/es not_active Expired
- 1971-05-04 CA CA112044A patent/CA934070A/en not_active Expired
- 1971-05-04 NL NLAANVRAGE7106117,A patent/NL174894C/xx not_active IP Right Cessation
- 1971-05-05 SE SE05811/71A patent/SE358052B/xx unknown
- 1971-05-05 CH CH665171A patent/CH520407A/de not_active IP Right Cessation
-
1974
- 1974-12-20 JP JP49145834A patent/JPS5148033B1/ja active Pending
-
1975
- 1975-11-21 JP JP50139365A patent/JPS528669B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE2021824A1 (de) | 1971-11-25 |
| CH520407A (de) | 1972-03-15 |
| JPS5148033B1 (xx) | 1976-12-18 |
| SE358052B (xx) | 1973-07-16 |
| US3736477A (en) | 1973-05-29 |
| BR7102168D0 (pt) | 1973-02-27 |
| ES390380A1 (es) | 1973-06-01 |
| CA934070A (en) | 1973-09-18 |
| FR2088338B1 (xx) | 1974-03-08 |
| DE2021824C3 (de) | 1980-08-14 |
| FR2088338A1 (xx) | 1972-01-07 |
| NL7106117A (xx) | 1971-11-09 |
| NL174894B (nl) | 1984-03-16 |
| BE764990A (fr) | 1971-08-16 |
| GB1284257A (en) | 1972-08-02 |
| JPS4935030B1 (xx) | 1974-09-19 |
| JPS528669B1 (xx) | 1977-03-10 |
| DE2021824B2 (de) | 1976-01-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| V4 | Discontinued because of reaching the maximum lifetime of a patent |