NL165002C - Werkwijze voor het vervaardigen van een halfgeleiderin- richting, waarbij oneffenheden van het oppervlak van een substraat worden verwijderd. - Google Patents

Werkwijze voor het vervaardigen van een halfgeleiderin- richting, waarbij oneffenheden van het oppervlak van een substraat worden verwijderd.

Info

Publication number
NL165002C
NL165002C NL7512562.A NL7512562A NL165002C NL 165002 C NL165002 C NL 165002C NL 7512562 A NL7512562 A NL 7512562A NL 165002 C NL165002 C NL 165002C
Authority
NL
Netherlands
Prior art keywords
imperials
substrate
manufacturing
semiconductor device
device removing
Prior art date
Application number
NL7512562.A
Other languages
English (en)
Other versions
NL165002B (nl
NL7512562A (nl
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP49122559A external-priority patent/JPS586306B2/ja
Priority claimed from JP12575275A external-priority patent/JPS5249772A/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of NL7512562A publication Critical patent/NL7512562A/nl
Publication of NL165002B publication Critical patent/NL165002B/nl
Application granted granted Critical
Publication of NL165002C publication Critical patent/NL165002C/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/2633—Bombardment with radiation with high-energy radiation for etching, e.g. sputteretching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/02—Contacts, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/105—Masks, metal

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
NL7512562.A 1974-10-25 1975-10-27 Werkwijze voor het vervaardigen van een halfgeleiderin- richting, waarbij oneffenheden van het oppervlak van een substraat worden verwijderd. NL165002C (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP49122559A JPS586306B2 (ja) 1974-10-25 1974-10-25 ハンドウタイソウチノ セイゾウホウホウ
JP12575275A JPS5249772A (en) 1975-10-18 1975-10-18 Process for production of semiconductor device

Publications (3)

Publication Number Publication Date
NL7512562A NL7512562A (nl) 1976-04-27
NL165002B NL165002B (nl) 1980-09-15
NL165002C true NL165002C (nl) 1981-02-16

Family

ID=26459656

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7512562.A NL165002C (nl) 1974-10-25 1975-10-27 Werkwijze voor het vervaardigen van een halfgeleiderin- richting, waarbij oneffenheden van het oppervlak van een substraat worden verwijderd.

Country Status (3)

Country Link
US (1) US4025411A (nl)
DE (1) DE2547792C3 (nl)
NL (1) NL165002C (nl)

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DE2629996A1 (de) * 1976-07-03 1978-01-05 Ibm Deutschland Verfahren zur passivierung und planarisierung eines metallisierungsmusters
US4092442A (en) * 1976-12-30 1978-05-30 International Business Machines Corporation Method of depositing thin films utilizing a polyimide mask
JPS5425178A (en) * 1977-07-27 1979-02-24 Fujitsu Ltd Manufacture for semiconductor device
US4180432A (en) * 1977-12-19 1979-12-25 International Business Machines Corporation Process for etching SiO2 layers to silicon in a moderate vacuum gas plasma
US4244799A (en) * 1978-09-11 1981-01-13 Bell Telephone Laboratories, Incorporated Fabrication of integrated circuits utilizing thick high-resolution patterns
US4222816A (en) * 1978-12-26 1980-09-16 International Business Machines Corporation Method for reducing parasitic capacitance in integrated circuit structures
JPS5595340A (en) * 1979-01-10 1980-07-19 Chiyou Lsi Gijutsu Kenkyu Kumiai Preparation of semiconductor device
JPS5626450A (en) * 1979-08-13 1981-03-14 Hitachi Ltd Manufacture of semiconductor device
US4274909A (en) * 1980-03-17 1981-06-23 International Business Machines Corporation Method for forming ultra fine deep dielectric isolation
US4289842A (en) * 1980-06-27 1981-09-15 Eastman Kodak Company Negative-working polymers useful as electron beam resists
US4514479A (en) * 1980-07-01 1985-04-30 The United States Of America As Represented By The Secretary Of The Navy Method of making near infrared polarizers
US4307179A (en) * 1980-07-03 1981-12-22 International Business Machines Corporation Planar metal interconnection system and process
US4307180A (en) * 1980-08-22 1981-12-22 International Business Machines Corp. Process of forming recessed dielectric regions in a monocrystalline silicon substrate
JPS57204133A (en) * 1981-06-10 1982-12-14 Hitachi Ltd Manufacture of semiconductor integrated circuit
JPS5828838A (ja) * 1981-08-14 1983-02-19 Comput Basic Mach Technol Res Assoc 薄膜磁気ヘッドの製造方法
US4397724A (en) * 1981-08-24 1983-08-09 Bell Telephone Laboratories, Incorporated Apparatus and method for plasma-assisted etching of wafers
CA1169022A (en) * 1982-04-19 1984-06-12 Kevin Duncan Integrated circuit planarizing process
JPS5982746A (ja) * 1982-11-04 1984-05-12 Toshiba Corp 半導体装置の電極配線方法
FR2537779B1 (fr) * 1982-12-10 1986-03-14 Commissariat Energie Atomique Procede de positionnement d'un trou de contact electrique entre deux lignes d'interconnexion d'un circuit integre
US4604162A (en) * 1983-06-13 1986-08-05 Ncr Corporation Formation and planarization of silicon-on-insulator structures
EP0146613B1 (en) * 1983-06-13 1990-12-05 Ncr Corporation Process for fabricating semiconductor structures
FR2559293B1 (fr) * 1984-02-03 1988-09-09 Commissariat Energie Atomique Nouvelle tete magnetique d'ecriture et de lecture pour enregistrement magnetique et son procede de fabrication
US4515652A (en) * 1984-03-20 1985-05-07 Harris Corporation Plasma sculpturing with a non-planar sacrificial layer
FR2566181B1 (fr) * 1984-06-14 1986-08-22 Commissariat Energie Atomique Procede d'autopositionnement d'une ligne d'interconnexion sur un trou de contact electrique d'un circuit integre
US4594769A (en) * 1984-06-15 1986-06-17 Signetics Corporation Method of forming insulator of selectively varying thickness on patterned conductive layer
US4708767A (en) * 1984-10-05 1987-11-24 Signetics Corporation Method for providing a semiconductor device with planarized contacts
US4541169A (en) * 1984-10-29 1985-09-17 International Business Machines Corporation Method for making studs for interconnecting metallization layers at different levels in a semiconductor chip
US4665007A (en) * 1985-08-19 1987-05-12 International Business Machines Corporation Planarization process for organic filling of deep trenches
US4672023A (en) * 1985-10-21 1987-06-09 Avantek, Inc. Method for planarizing wafers
US4671851A (en) * 1985-10-28 1987-06-09 International Business Machines Corporation Method for removing protuberances at the surface of a semiconductor wafer using a chem-mech polishing technique
US4654121A (en) * 1986-02-27 1987-03-31 Ncr Corporation Fabrication process for aligned and stacked CMOS devices
US4867838A (en) * 1986-10-27 1989-09-19 International Business Machines Corporation Planarization through silylation
US4816112A (en) * 1986-10-27 1989-03-28 International Business Machines Corporation Planarization process through silylation
US4789646A (en) * 1987-07-20 1988-12-06 North American Philips Corporation, Signetics Division Company Method for selective surface treatment of semiconductor structures
DE3801976A1 (de) * 1988-01-23 1989-08-03 Telefunken Electronic Gmbh Verfahren zum planarisieren von halbleiteroberflaechen
US5759360A (en) * 1995-03-13 1998-06-02 Applied Materials, Inc. Wafer clean sputtering process
US5527736A (en) * 1995-04-03 1996-06-18 Taiwan Semiconductor Manufacturing Co. Dimple-free tungsten etching back process
US5930639A (en) * 1996-04-08 1999-07-27 Micron Technology, Inc. Method for precision etching of platinum electrodes
US5744400A (en) * 1996-05-06 1998-04-28 Accord Semiconductor Equipment Group Apparatus and method for dry milling of non-planar features on a semiconductor surface
US7230292B2 (en) * 2003-08-05 2007-06-12 Micron Technology, Inc. Stud electrode and process for making same
US20060244345A1 (en) * 2005-05-02 2006-11-02 Mallory Sonalert Products, Inc. Pluggable terminal block assembly for audible signal alarm power connection
US8506828B1 (en) 2011-06-28 2013-08-13 Western Digital (Fremont), Llc Method and system for providing a magnetic recording transducer using an ion beam scan polishing planarization
US8480911B1 (en) 2011-06-30 2013-07-09 Western Digital (Fremont), Llc Method and system for providing a read sensor in a magnetic recording transducer using focused ion beam scan polishing

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Publication number Priority date Publication date Assignee Title
US3506506A (en) * 1967-07-14 1970-04-14 Ibm Capacitor defect isolation
GB1230421A (nl) * 1967-09-15 1971-05-05
US3740280A (en) * 1971-05-14 1973-06-19 Rca Corp Method of making semiconductor device
US3816196A (en) * 1971-06-07 1974-06-11 Gen Electric Passivation of photoresist materials used in selective plasma etching
US3791858A (en) * 1971-12-13 1974-02-12 Ibm Method of forming multi-layer circuit panels
NL7213625A (nl) * 1972-10-07 1974-04-09

Also Published As

Publication number Publication date
NL165002B (nl) 1980-09-15
US4025411A (en) 1977-05-24
DE2547792B2 (de) 1977-12-22
DE2547792C3 (de) 1978-08-31
DE2547792A1 (de) 1976-05-20
NL7512562A (nl) 1976-04-27

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Legal Events

Date Code Title Description
V4 Discontinued because of reaching the maximum lifetime of a patent

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