NL163064C - Halfgeleidergeheugeninrichting omvattende een samenge- stelde isolerende laag die een eerste isolerende laag van siliciumdioxyde en een op de eerste isolerende laag aangebrachte tweede isolerende laag met invangniveaux bevat. - Google Patents
Halfgeleidergeheugeninrichting omvattende een samenge- stelde isolerende laag die een eerste isolerende laag van siliciumdioxyde en een op de eerste isolerende laag aangebrachte tweede isolerende laag met invangniveaux bevat.Info
- Publication number
- NL163064C NL163064C NL7217144.A NL7217144A NL163064C NL 163064 C NL163064 C NL 163064C NL 7217144 A NL7217144 A NL 7217144A NL 163064 C NL163064 C NL 163064C
- Authority
- NL
- Netherlands
- Prior art keywords
- insulating
- coating
- semi
- memory device
- silicon dioxide
- Prior art date
Links
- 239000011248 coating agent Substances 0.000 title 3
- 238000000576 coating method Methods 0.000 title 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title 2
- 239000002131 composite material Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 235000012239 silicon dioxide Nutrition 0.000 title 1
- 239000000377 silicon dioxide Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356008—Bistable circuits ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10308271A JPS4866943A (de) | 1971-12-17 | 1971-12-17 | |
JP10308371A JPS5144869B2 (de) | 1971-12-17 | 1971-12-17 |
Publications (3)
Publication Number | Publication Date |
---|---|
NL7217144A NL7217144A (de) | 1973-06-19 |
NL163064B NL163064B (nl) | 1980-02-15 |
NL163064C true NL163064C (nl) | 1980-07-15 |
Family
ID=26443741
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7217144.A NL163064C (nl) | 1971-12-17 | 1972-12-15 | Halfgeleidergeheugeninrichting omvattende een samenge- stelde isolerende laag die een eerste isolerende laag van siliciumdioxyde en een op de eerste isolerende laag aangebrachte tweede isolerende laag met invangniveaux bevat. |
Country Status (6)
Country | Link |
---|---|
JP (2) | JPS5144869B2 (de) |
CA (1) | CA1000404A (de) |
DE (1) | DE2261522C3 (de) |
FR (1) | FR2163682B1 (de) |
GB (1) | GB1391640A (de) |
NL (1) | NL163064C (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53150469U (de) * | 1977-05-02 | 1978-11-27 | ||
JPS5484575U (de) * | 1977-11-29 | 1979-06-15 | ||
JPS555478U (de) * | 1978-06-26 | 1980-01-14 | ||
JPS617816U (ja) * | 1984-06-19 | 1986-01-17 | 松下電器産業株式会社 | 押釦装置 |
JPH06326323A (ja) * | 1993-05-14 | 1994-11-25 | Nec Corp | 不揮発性トンネルトランジスタおよびメモリ回路 |
US6303940B1 (en) | 1999-01-26 | 2001-10-16 | Agere Systems Guardian Corp. | Charge injection transistor using high-k dielectric barrier layer |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2791761A (en) * | 1955-02-18 | 1957-05-07 | Bell Telephone Labor Inc | Electrical switching and storage |
CA813537A (en) * | 1967-10-17 | 1969-05-20 | Joseph H. Scott, Jr. | Semiconductor memory device |
-
1971
- 1971-12-17 JP JP10308371A patent/JPS5144869B2/ja not_active Expired
- 1971-12-17 JP JP10308271A patent/JPS4866943A/ja active Pending
-
1972
- 1972-12-14 GB GB5776672A patent/GB1391640A/en not_active Expired
- 1972-12-15 FR FR7244780A patent/FR2163682B1/fr not_active Expired
- 1972-12-15 NL NL7217144.A patent/NL163064C/xx not_active IP Right Cessation
- 1972-12-15 DE DE2261522A patent/DE2261522C3/de not_active Expired
- 1972-12-15 CA CA158,958A patent/CA1000404A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
NL7217144A (de) | 1973-06-19 |
FR2163682A1 (de) | 1973-07-27 |
FR2163682B1 (de) | 1976-10-29 |
CA1000404A (en) | 1976-11-23 |
DE2261522A1 (de) | 1973-07-12 |
JPS4866943A (de) | 1973-09-13 |
JPS5144869B2 (de) | 1976-12-01 |
NL163064B (nl) | 1980-02-15 |
JPS4866944A (de) | 1973-09-13 |
DE2261522B2 (de) | 1977-07-07 |
DE2261522C3 (de) | 1982-03-04 |
GB1391640A (en) | 1975-04-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
V4 | Lapsed because of reaching the maxim lifetime of a patent |