NL161300C - Werkwijze ter vervaardiging van een halfgeleider- inrichting met een zenerdiode en halfgeleiderinrichting vervaardigd door toepassing van deze werkwijze. - Google Patents

Werkwijze ter vervaardiging van een halfgeleider- inrichting met een zenerdiode en halfgeleiderinrichting vervaardigd door toepassing van deze werkwijze.

Info

Publication number
NL161300C
NL161300C NL6808886.A NL6808886A NL161300C NL 161300 C NL161300 C NL 161300C NL 6808886 A NL6808886 A NL 6808886A NL 161300 C NL161300 C NL 161300C
Authority
NL
Netherlands
Prior art keywords
semiconductor device
semiconductor
manufacturing
device made
semiconductor semiconductor
Prior art date
Application number
NL6808886.A
Other languages
English (en)
Dutch (nl)
Other versions
NL6808886A (de
NL161300B (nl
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of NL6808886A publication Critical patent/NL6808886A/xx
Publication of NL161300B publication Critical patent/NL161300B/xx
Application granted granted Critical
Publication of NL161300C publication Critical patent/NL161300C/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826—Combination of vertical complementary transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/983—Zener diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
NL6808886.A 1967-06-30 1968-06-25 Werkwijze ter vervaardiging van een halfgeleider- inrichting met een zenerdiode en halfgeleiderinrichting vervaardigd door toepassing van deze werkwijze. NL161300C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR112630 1967-06-30

Publications (3)

Publication Number Publication Date
NL6808886A NL6808886A (de) 1968-12-31
NL161300B NL161300B (nl) 1979-08-15
NL161300C true NL161300C (nl) 1980-01-15

Family

ID=8634217

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6808886.A NL161300C (nl) 1967-06-30 1968-06-25 Werkwijze ter vervaardiging van een halfgeleider- inrichting met een zenerdiode en halfgeleiderinrichting vervaardigd door toepassing van deze werkwijze.

Country Status (5)

Country Link
US (1) US3607465A (de)
FR (1) FR1559607A (de)
GB (1) GB1234985A (de)
NL (1) NL161300C (de)
SE (1) SE352198B (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE361555B (de) * 1969-06-10 1973-11-05 Rca Corp
US3734787A (en) * 1970-01-09 1973-05-22 Ibm Fabrication of diffused junction capacitor by simultaneous outdiffusion
US3769105A (en) * 1970-01-26 1973-10-30 Ibm Process for making an integrated circuit with a damping resistor in combination with a buried decoupling capacitor
US3868722A (en) * 1970-06-20 1975-02-25 Philips Corp Semiconductor device having at least two transistors and method of manufacturing same
DE2131993C2 (de) * 1971-06-28 1984-10-11 Telefunken electronic GmbH, 7100 Heilbronn Verfahren zum Herstellen eines niederohmigen Anschlusses
US3961340A (en) * 1971-11-22 1976-06-01 U.S. Philips Corporation Integrated circuit having bipolar transistors and method of manufacturing said circuit
DE2351985A1 (de) * 1973-10-17 1975-04-30 Itt Ind Gmbh Deutsche Planardiffusionsverfahren zum herstellen einer monolithisch integrierten festkoerperschaltung
US3999205A (en) * 1975-04-03 1976-12-21 Rca Corporation Rectifier structure for a semiconductor integrated circuit device
US4485552A (en) * 1980-01-18 1984-12-04 International Business Machines Corporation Complementary transistor structure and method for manufacture
FR2523370B1 (fr) * 1982-03-12 1985-12-13 Thomson Csf Transistor pnp fort courant faisant partie d'un circuit integre monolithique
US5061652A (en) * 1990-01-23 1991-10-29 International Business Machines Corporation Method of manufacturing a semiconductor device structure employing a multi-level epitaxial structure
US5159429A (en) * 1990-01-23 1992-10-27 International Business Machines Corporation Semiconductor device structure employing a multi-level epitaxial structure and method of manufacturing same
US5559044A (en) * 1992-09-21 1996-09-24 Siliconix Incorporated BiCDMOS process technology
KR0171128B1 (ko) * 1995-04-21 1999-02-01 김우중 수직형 바이폴라 트랜지스터

Also Published As

Publication number Publication date
NL6808886A (de) 1968-12-31
DE1764552A1 (de) 1971-05-13
SE352198B (de) 1972-12-18
DE1764552B2 (de) 1973-11-08
GB1234985A (en) 1971-06-09
NL161300B (nl) 1979-08-15
FR1559607A (de) 1969-03-14
US3607465A (en) 1971-09-21

Similar Documents

Publication Publication Date Title
NL141937B (nl) Werkwijze en inrichting voor het vervaardigen van een stabiel getwijnd garen door zelftwisten.
DK119934B (da) Fremgangsmåde til fremstilling af et halvlederorgan.
NL161616C (nl) Werkwijze voor het vervaardigen van een halfgeleider- inrichting.
DK122554B (da) Fremgangsmåde til fremstilling af et halvlederorgan.
NL158024B (nl) Werkwijze ter vervaardiging van een halfgeleiderinrichting en halfgeleiderinrichting verkregen door toepassing van de werkwijze.
NL162789C (nl) Werkwijze voor het vervaardigen van een halfgeleider- inrichting.
NL161300C (nl) Werkwijze ter vervaardiging van een halfgeleider- inrichting met een zenerdiode en halfgeleiderinrichting vervaardigd door toepassing van deze werkwijze.
NL165328B (nl) Werkwijze voor het metalliseren van een luminescentie- scherm.
NL163369C (nl) Werkwijze voor het vervaardigen van een halfgeleider- inrichting.
NL157749C (nl) Werkwijze voor het vervaardigen van een veldeffect- transistor en veldeffecttransistor vervaardigd volgens de werkwijze.
NL154061B (nl) Werkwijze voor het vervaardigen van een halfgeleiderinrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze.
DK117846B (da) Fremgangsmåde til fremstilling af et halvlederapparat.
FI49473C (fi) Menetelmä tablettien päällystämiseksi.
NL163673C (nl) Werkwijze ter vervaardiging van een geintegreerde half- geleiderinrichting met een veldeffecttransistor van het overgangstype.
NL163671C (nl) Werkwijze ter vervaardiging van een halfgeleider- inrichting.
NL162816C (nl) Werkwijze ter vervaardiging van een drager met gedrukte schakeling.
NL162710C (nl) Werkwijze voor het vervaardigen van een ladder en een met behulp van de werkwijze vervaardigde ladder.
NL162865B (nl) Werkwijze voor het vervaardigen van een ritssluiting.
NL158323C (nl) Werkwijze voor de vervaardiging van een halfgeleiderinrichting.
CH495629A (de) Halbleiteranordnung und Verfahren zu deren Herstellung
NL161618C (nl) Werkwijze ter vervaardiging van een geintegreerde halfgeleiderinrichting en geintegreerde halfgeleider- inrichting vervaardigd volgens de werkwijze.
NL176414C (nl) Werkwijze ter vervaardiging van een halfgeleiderinrichting.
NL161820C (nl) Werkwijze voor het vervaardigen van een samengesteld filament.
NL167139C (nl) Werkwijze voor het vervaardigen van een doorzichtige geleider.
NL167933C (nl) Werkwijze voor de vervaardiging van diamant.

Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee
NL80 Abbreviated name of patent owner mentioned of already nullified patent

Owner name: PHILIPS