NL154329B - Inrichting voor het detecteren en/of meten van straling. - Google Patents

Inrichting voor het detecteren en/of meten van straling.

Info

Publication number
NL154329B
NL154329B NL666602606A NL6602606A NL154329B NL 154329 B NL154329 B NL 154329B NL 666602606 A NL666602606 A NL 666602606A NL 6602606 A NL6602606 A NL 6602606A NL 154329 B NL154329 B NL 154329B
Authority
NL
Netherlands
Prior art keywords
detecting
measuring radiation
radiation
measuring
Prior art date
Application number
NL666602606A
Other languages
English (en)
Dutch (nl)
Other versions
NL6602606A (fr
Inventor
Drs Jan Hornstra
Drs Rene Van Dantzig
Dirk Pieter Oosthoek
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL666602606A priority Critical patent/NL154329B/xx
Priority to GB8984/67A priority patent/GB1171395A/en
Priority to DE1967N0030065 priority patent/DE1614222B2/de
Priority to JP1175267A priority patent/JPS4415502B1/ja
Priority to CH283767A priority patent/CH471440A/de
Priority to CH283867A priority patent/CH460962A/de
Priority to BE694727D priority patent/BE694727A/xx
Priority to SE02734/67A priority patent/SE333613B/xx
Priority to JP1232567A priority patent/JPS5512746B1/ja
Priority to US619466A priority patent/US3529159A/en
Priority to US619465A priority patent/US3529161A/en
Priority to DE19671614223 priority patent/DE1614223A1/de
Priority to GB9348/67A priority patent/GB1173507A/en
Priority to SE02736/67A priority patent/SE327478B/xx
Priority to FR96980A priority patent/FR1512887A/fr
Priority to FR96981A priority patent/FR1524189A/fr
Priority to BE694869D priority patent/BE694869A/xx
Publication of NL6602606A publication Critical patent/NL6602606A/xx
Publication of NL154329B publication Critical patent/NL154329B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • H01L31/118—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
    • G01T1/2914—Measurement of spatial distribution of radiation
    • G01T1/2921—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
    • G01T1/2928—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras using solid state detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/115—Orientation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
NL666602606A 1966-03-01 1966-03-01 Inrichting voor het detecteren en/of meten van straling. NL154329B (nl)

Priority Applications (17)

Application Number Priority Date Filing Date Title
NL666602606A NL154329B (nl) 1966-03-01 1966-03-01 Inrichting voor het detecteren en/of meten van straling.
GB8984/67A GB1171395A (en) 1966-03-01 1967-02-24 Improvements in Semiconductor Devices
DE1967N0030065 DE1614222B2 (de) 1966-03-01 1967-02-25 Halbleitervorrichtung zum detektieren und/oder messen von strahlung
JP1175267A JPS4415502B1 (fr) 1966-03-01 1967-02-25
CH283767A CH471440A (de) 1966-03-01 1967-02-27 Halbleitervorrichtung zum Detektieren und/oder Messen von Strahlung
CH283867A CH460962A (de) 1966-03-01 1967-02-27 Halbleitervorrichtung zum Nachweisen und/oder Messen von Strahlung
BE694727D BE694727A (fr) 1966-03-01 1967-02-27
SE02734/67A SE333613B (fr) 1966-03-01 1967-02-28
JP1232567A JPS5512746B1 (fr) 1966-03-01 1967-02-28
US619466A US3529159A (en) 1966-03-01 1967-02-28 Semiconductor device for detecting and/or measuring radiation
US619465A US3529161A (en) 1966-03-01 1967-02-28 Semiconductor device for detecting and/or measuring radiation
DE19671614223 DE1614223A1 (de) 1966-03-01 1967-02-28 Halbleitervorrichtung zum Detektieren und/oder Messen von Strahlung
GB9348/67A GB1173507A (en) 1966-03-01 1967-02-28 Improvements in and relating to Semiconductor Devices.
SE02736/67A SE327478B (fr) 1966-03-01 1967-02-28
FR96980A FR1512887A (fr) 1966-03-01 1967-03-01 Dispositif semi-conducteur pour détecter un rayonnement et en mesurer l'intensité
FR96981A FR1524189A (fr) 1966-03-01 1967-03-01 Dispositif semi-conducteur permettant de détecter un rayonnement et d'en mesurer l'intensité
BE694869D BE694869A (fr) 1966-03-01 1967-03-01

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL666602606A NL154329B (nl) 1966-03-01 1966-03-01 Inrichting voor het detecteren en/of meten van straling.

Publications (2)

Publication Number Publication Date
NL6602606A NL6602606A (fr) 1967-09-04
NL154329B true NL154329B (nl) 1977-08-15

Family

ID=19795864

Family Applications (1)

Application Number Title Priority Date Filing Date
NL666602606A NL154329B (nl) 1966-03-01 1966-03-01 Inrichting voor het detecteren en/of meten van straling.

Country Status (9)

Country Link
US (2) US3529159A (fr)
JP (2) JPS4415502B1 (fr)
BE (2) BE694727A (fr)
CH (2) CH471440A (fr)
DE (2) DE1614222B2 (fr)
FR (2) FR1524189A (fr)
GB (2) GB1171395A (fr)
NL (1) NL154329B (fr)
SE (2) SE327478B (fr)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3824680A (en) * 1968-03-28 1974-07-23 Levina Fizichesky I I Lebedeva Nuclear radiation detector and method of manufacturing same
FR1593679A (fr) * 1968-11-27 1970-06-01
US3622844A (en) * 1969-08-18 1971-11-23 Texas Instruments Inc Avalanche photodiode utilizing schottky-barrier configurations
US3715590A (en) * 1971-03-26 1973-02-06 Nasa Micrometeoroid analyzer
GB1431053A (en) * 1972-05-18 1976-04-07 Nat Res Dev Radiation detectors
DE2239953A1 (de) * 1972-08-14 1974-02-28 Siemens Ag Detektoranordnung
DE2255095C2 (de) * 1972-11-10 1986-04-17 Siemens AG, 1000 Berlin und 8000 München Detektor für ionisierende Strahlung
US3790794A (en) * 1972-12-21 1974-02-05 Us Navy Absolute calorimetric dosimeter
US3859521A (en) * 1973-01-23 1975-01-07 Mc Donnell Douglas Corp Grid lateral photodetector
US3842276A (en) * 1973-06-15 1974-10-15 Rca Corp Thermal radiation detector
US3870887A (en) * 1973-10-10 1975-03-11 Mc Donnell Douglas Corp Optical image position indicator means using time and phase delay sensing
DE2442276A1 (de) * 1974-09-04 1976-03-25 Siemens Ag Elektrooptischer wandler
JPS52105856A (en) * 1976-03-03 1977-09-05 Toyo Glass Co Ltd Detector for eccentricity of opening of bottle
US4070578A (en) * 1976-07-30 1978-01-24 Timothy John G Detector array and method
FR2375602A1 (fr) * 1976-12-23 1978-07-21 Thomson Csf Dispositif de detection du signal de deviation du faisceau electronique d'un canon a electrons, notamment pour oscillographe cathodique, et oscillographe comportant un tel dispositif
US4472728A (en) * 1982-02-19 1984-09-18 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Imaging X-ray spectrometer
GB2125217B (en) * 1982-08-06 1986-01-02 Secr Defence Infra red detector arrays
US4513201A (en) * 1983-07-21 1985-04-23 Ball Corporation Thermocouple detector
US5125016B1 (en) * 1983-09-22 1998-02-24 Outokumpu Oy Procedure and measuring apparatus based on x-ray diffraction for measuring stresses
US4688067A (en) * 1984-02-24 1987-08-18 The United States Of America As Represented By The Department Of Energy Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages
JPH01315231A (ja) * 1988-06-14 1989-12-20 Fanuc Ltd 交流モータのコイル巻設構造
US5028971A (en) * 1990-06-04 1991-07-02 The United States Of America As Represented By The Secretary Of The Army High power photoconductor bulk GaAs switch
US5592523A (en) * 1994-12-06 1997-01-07 Picker International, Inc. Two dimensional detector array for CT scanners
US5930330A (en) * 1995-09-29 1999-07-27 New Mexico Biophysics Method and apparatus for multitaxis scanning system
US6332590B1 (en) * 1998-12-23 2001-12-25 Space Systems/Loral, Inc. Photoemission based spacecraft charging sensor
US6455858B1 (en) 2000-08-13 2002-09-24 Photon Imaging, Inc. Semiconductor radiation detector
FR2939968B1 (fr) * 2008-12-17 2013-06-07 Eads Europ Aeronautic Defence Generateur electrique excite par rayonnements cosmiques.
FR2948200B1 (fr) * 2009-07-16 2013-02-08 Commissariat Energie Atomique Dispositif de detection de rayonnement a agencement ameliore
GB2475063A (en) * 2009-11-04 2011-05-11 Univ Leicester Charge detector for photons or particles.
US11677040B2 (en) * 2019-11-21 2023-06-13 Raytheon Company Method and apparatus for enhanced photoconductivity of semiconductor
US11927616B2 (en) 2021-03-30 2024-03-12 International Business Machines Corporation Evaluation of wafer carcass alpha particle emission

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3207902A (en) * 1963-06-20 1965-09-21 Nuclear Diodes Inc Radiation position detector
US3415992A (en) * 1965-12-28 1968-12-10 Nasa Extended area semiconductor radiation detectors and a novel readout arrangement

Also Published As

Publication number Publication date
DE1614222A1 (de) 1970-02-26
DE1614223A1 (de) 1970-05-27
US3529161A (en) 1970-09-15
DE1614222B2 (de) 1977-02-10
GB1173507A (en) 1969-12-10
CH460962A (de) 1968-08-15
FR1512887A (fr) 1968-02-09
FR1524189A (fr) 1968-05-10
JPS5512746B1 (fr) 1980-04-03
SE333613B (fr) 1971-03-22
CH471440A (de) 1969-04-15
SE327478B (fr) 1970-08-24
NL6602606A (fr) 1967-09-04
JPS4415502B1 (fr) 1968-07-09
BE694869A (fr) 1967-09-01
GB1171395A (en) 1969-11-19
BE694727A (fr) 1967-08-28
US3529159A (en) 1970-09-15

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Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee
NL80 Information provided on patent owner name for an already discontinued patent

Owner name: PHILIPS