SE333613B - - Google Patents
Info
- Publication number
- SE333613B SE333613B SE02734/67A SE273467A SE333613B SE 333613 B SE333613 B SE 333613B SE 02734/67 A SE02734/67 A SE 02734/67A SE 273467 A SE273467 A SE 273467A SE 333613 B SE333613 B SE 333613B
- Authority
- SE
- Sweden
- Prior art keywords
- disc
- gold
- electrodes
- degrees
- normal
- Prior art date
Links
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 3
- 239000010931 gold Substances 0.000 abstract 3
- 229910052737 gold Inorganic materials 0.000 abstract 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 239000004411 aluminium Substances 0.000 abstract 2
- 239000002245 particle Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 229910003460 diamond Inorganic materials 0.000 abstract 1
- 239000010432 diamond Substances 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
- H01L31/118—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
- G01T1/2914—Measurement of spatial distribution of radiation
- G01T1/2921—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
- G01T1/2928—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras using solid state detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/115—Orientation
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- High Energy & Nuclear Physics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL666602606A NL154329B (nl) | 1966-03-01 | 1966-03-01 | Inrichting voor het detecteren en/of meten van straling. |
Publications (1)
Publication Number | Publication Date |
---|---|
SE333613B true SE333613B (fr) | 1971-03-22 |
Family
ID=19795864
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE02734/67A SE333613B (fr) | 1966-03-01 | 1967-02-28 | |
SE02736/67A SE327478B (fr) | 1966-03-01 | 1967-02-28 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE02736/67A SE327478B (fr) | 1966-03-01 | 1967-02-28 |
Country Status (9)
Country | Link |
---|---|
US (2) | US3529161A (fr) |
JP (2) | JPS4415502B1 (fr) |
BE (2) | BE694727A (fr) |
CH (2) | CH460962A (fr) |
DE (2) | DE1614222B2 (fr) |
FR (2) | FR1512887A (fr) |
GB (2) | GB1171395A (fr) |
NL (1) | NL154329B (fr) |
SE (2) | SE333613B (fr) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3824680A (en) * | 1968-03-28 | 1974-07-23 | Levina Fizichesky I I Lebedeva | Nuclear radiation detector and method of manufacturing same |
FR1593679A (fr) * | 1968-11-27 | 1970-06-01 | ||
US3622844A (en) * | 1969-08-18 | 1971-11-23 | Texas Instruments Inc | Avalanche photodiode utilizing schottky-barrier configurations |
US3715590A (en) * | 1971-03-26 | 1973-02-06 | Nasa | Micrometeoroid analyzer |
GB1431053A (en) * | 1972-05-18 | 1976-04-07 | Nat Res Dev | Radiation detectors |
DE2239953A1 (de) * | 1972-08-14 | 1974-02-28 | Siemens Ag | Detektoranordnung |
DE2255095C2 (de) * | 1972-11-10 | 1986-04-17 | Siemens AG, 1000 Berlin und 8000 München | Detektor für ionisierende Strahlung |
US3790794A (en) * | 1972-12-21 | 1974-02-05 | Us Navy | Absolute calorimetric dosimeter |
US3859521A (en) * | 1973-01-23 | 1975-01-07 | Mc Donnell Douglas Corp | Grid lateral photodetector |
US3842276A (en) * | 1973-06-15 | 1974-10-15 | Rca Corp | Thermal radiation detector |
US3870887A (en) * | 1973-10-10 | 1975-03-11 | Mc Donnell Douglas Corp | Optical image position indicator means using time and phase delay sensing |
DE2442276A1 (de) * | 1974-09-04 | 1976-03-25 | Siemens Ag | Elektrooptischer wandler |
JPS52105856A (en) * | 1976-03-03 | 1977-09-05 | Toyo Glass Co Ltd | Detector for eccentricity of opening of bottle |
US4070578A (en) * | 1976-07-30 | 1978-01-24 | Timothy John G | Detector array and method |
FR2375602A1 (fr) * | 1976-12-23 | 1978-07-21 | Thomson Csf | Dispositif de detection du signal de deviation du faisceau electronique d'un canon a electrons, notamment pour oscillographe cathodique, et oscillographe comportant un tel dispositif |
US4472728A (en) * | 1982-02-19 | 1984-09-18 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Imaging X-ray spectrometer |
GB2125217B (en) * | 1982-08-06 | 1986-01-02 | Secr Defence | Infra red detector arrays |
US4513201A (en) * | 1983-07-21 | 1985-04-23 | Ball Corporation | Thermocouple detector |
US5125016B1 (en) * | 1983-09-22 | 1998-02-24 | Outokumpu Oy | Procedure and measuring apparatus based on x-ray diffraction for measuring stresses |
US4688067A (en) * | 1984-02-24 | 1987-08-18 | The United States Of America As Represented By The Department Of Energy | Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages |
JPH01315231A (ja) * | 1988-06-14 | 1989-12-20 | Fanuc Ltd | 交流モータのコイル巻設構造 |
US5028971A (en) * | 1990-06-04 | 1991-07-02 | The United States Of America As Represented By The Secretary Of The Army | High power photoconductor bulk GaAs switch |
US5592523A (en) * | 1994-12-06 | 1997-01-07 | Picker International, Inc. | Two dimensional detector array for CT scanners |
US5930330A (en) * | 1995-09-29 | 1999-07-27 | New Mexico Biophysics | Method and apparatus for multitaxis scanning system |
US6332590B1 (en) * | 1998-12-23 | 2001-12-25 | Space Systems/Loral, Inc. | Photoemission based spacecraft charging sensor |
US6455858B1 (en) | 2000-08-13 | 2002-09-24 | Photon Imaging, Inc. | Semiconductor radiation detector |
FR2939968B1 (fr) * | 2008-12-17 | 2013-06-07 | Eads Europ Aeronautic Defence | Generateur electrique excite par rayonnements cosmiques. |
FR2948200B1 (fr) * | 2009-07-16 | 2013-02-08 | Commissariat Energie Atomique | Dispositif de detection de rayonnement a agencement ameliore |
GB2475063A (en) * | 2009-11-04 | 2011-05-11 | Univ Leicester | Charge detector for photons or particles. |
US11677040B2 (en) * | 2019-11-21 | 2023-06-13 | Raytheon Company | Method and apparatus for enhanced photoconductivity of semiconductor |
US11927616B2 (en) | 2021-03-30 | 2024-03-12 | International Business Machines Corporation | Evaluation of wafer carcass alpha particle emission |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3207902A (en) * | 1963-06-20 | 1965-09-21 | Nuclear Diodes Inc | Radiation position detector |
US3415992A (en) * | 1965-12-28 | 1968-12-10 | Nasa | Extended area semiconductor radiation detectors and a novel readout arrangement |
-
1966
- 1966-03-01 NL NL666602606A patent/NL154329B/xx not_active IP Right Cessation
-
1967
- 1967-02-24 GB GB8984/67A patent/GB1171395A/en not_active Expired
- 1967-02-25 JP JP1175267A patent/JPS4415502B1/ja active Pending
- 1967-02-25 DE DE1967N0030065 patent/DE1614222B2/de active Granted
- 1967-02-27 CH CH283867A patent/CH460962A/de not_active IP Right Cessation
- 1967-02-27 BE BE694727D patent/BE694727A/xx unknown
- 1967-02-27 CH CH283767A patent/CH471440A/de not_active IP Right Cessation
- 1967-02-28 US US619465A patent/US3529161A/en not_active Expired - Lifetime
- 1967-02-28 SE SE02734/67A patent/SE333613B/xx unknown
- 1967-02-28 GB GB9348/67A patent/GB1173507A/en not_active Expired
- 1967-02-28 DE DE19671614223 patent/DE1614223A1/de active Pending
- 1967-02-28 SE SE02736/67A patent/SE327478B/xx unknown
- 1967-02-28 JP JP1232567A patent/JPS5512746B1/ja active Pending
- 1967-02-28 US US619466A patent/US3529159A/en not_active Expired - Lifetime
- 1967-03-01 BE BE694869D patent/BE694869A/xx unknown
- 1967-03-01 FR FR96980A patent/FR1512887A/fr not_active Expired
- 1967-03-01 FR FR96981A patent/FR1524189A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE1614222A1 (de) | 1970-02-26 |
CH471440A (de) | 1969-04-15 |
GB1171395A (en) | 1969-11-19 |
DE1614223A1 (de) | 1970-05-27 |
NL6602606A (fr) | 1967-09-04 |
GB1173507A (en) | 1969-12-10 |
US3529159A (en) | 1970-09-15 |
BE694727A (fr) | 1967-08-28 |
US3529161A (en) | 1970-09-15 |
SE327478B (fr) | 1970-08-24 |
CH460962A (de) | 1968-08-15 |
JPS4415502B1 (fr) | 1968-07-09 |
NL154329B (nl) | 1977-08-15 |
DE1614222B2 (de) | 1977-02-10 |
FR1512887A (fr) | 1968-02-09 |
JPS5512746B1 (fr) | 1980-04-03 |
BE694869A (fr) | 1967-09-01 |
FR1524189A (fr) | 1968-05-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SE333613B (fr) | ||
US3117229A (en) | Solid state radiation detector with separate ohmic contacts to reduce leakage current | |
GB1283484A (en) | Light activated semiconductor device | |
Zanio | Use of various device geometries to improve the performance of CdTe detectors | |
US3105906A (en) | Germanium silicon alloy semiconductor detector for infrared radiation | |
US3612869A (en) | Large volume planar pair germanium (lithium) detector | |
US3925669A (en) | Stripline radiation detection apparatus | |
GB1515482A (en) | Solid detector for ionizing radiation | |
GB1334437A (en) | Semiconductor nuclear radiation detectors | |
IAVLINSKII et al. | Surface-barrier p-type silicon counters for alpha particles(Surface barrier p-n junction formation in p-type silicon counters used in spectrometric detectors for alpha particles) | |
GB1253873A (en) | Improvements in and relating to semiconductor radiation-detectors | |
GB1380813A (en) | Semiconductor devices | |
Arnoldy et al. | Observations of the Van Allen radiation regions during August and September 1959: 5. Visual auroras, high‐altitude X‐ray bursts, and simultaneous satellite observations | |
Gibson | The role of particle channelling in detector systems | |
GB1193716A (en) | Improvements in and relating to Semiconductor Devices | |
Morgan et al. | Shower Production in Small Thicknesses of Lead and Other Elements | |
EGGLESTON et al. | Flat plate thermoelectric solar cells- Manufacturing process and life testing(Manufacturing process and life testing of bismuth telluride alloy based flat plate thermoelectric solar cells for near earth orbits) | |
JPH0473636B2 (fr) | ||
FRIEDBERG et al. | Calibration of the Concorde radiation detection instrument and measurements at SST altitude(Calibration and performance of cosmic radiation detector for Concorde supersonic transport) | |
MUELLER | Cesium adsorption on tungsten studied by Low Energy Electron Diffraction/LEED/ and secondary electron spectroscopy(Surface structures, work function changes, Auger electron emission, and surface plasma losses for cesium adsorption on tungsten single crystals studied in LEED apparatus) | |
Manchanda | Relative Contribution of Various Secondary X-ray Components below 100keV at Balloon Altitudes | |
JPS58180068A (ja) | 半導体放射線検出器の製造方法 | |
GB1288902A (fr) | ||
MEYERAND | Laser plasma production- A new area of plasma-dynamics research(Plasma production by optical irradiation of gases and by solids, considering interaction of laser radiation with surfaces and irradiation of particles of solid material in vacuum) | |
Mariani et al. | Geomagnetic, auroral, ionospheric and cosmic-ray perturbations- Interdependence and relationship with solar activity(Geomagnetic, auroral, ionospheric and cosmic ray perturbations interdependence and relationship with solar activity) |