NL138766B - Werkwijze voor het met behulp van kroesloos zonesmelten vergroten van de dwarsdoorsnede van een monokristallijn staafvormig lichaam. - Google Patents
Werkwijze voor het met behulp van kroesloos zonesmelten vergroten van de dwarsdoorsnede van een monokristallijn staafvormig lichaam.Info
- Publication number
- NL138766B NL138766B NL656506040A NL6506040A NL138766B NL 138766 B NL138766 B NL 138766B NL 656506040 A NL656506040 A NL 656506040A NL 6506040 A NL6506040 A NL 6506040A NL 138766 B NL138766 B NL 138766B
- Authority
- NL
- Netherlands
- Prior art keywords
- crischless
- enlarging
- cross
- section
- shaped body
- Prior art date
Links
- 238000000034 method Methods 0.000 title 1
- 238000004857 zone melting Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
- C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/32—Mechanisms for moving either the charge or the heater
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/08—Downward pulling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/901—Levitation, reduced gravity, microgravity, space
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/91—Downward pulling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/911—Seed or rod holders
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/912—Replenishing liquid precursor, other than a moving zone
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/917—Magnetic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Silicon Compounds (AREA)
Priority Applications (26)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES89317A DE1218404B (de) | 1964-02-01 | 1964-02-01 | Verfahren zum tiegelfreien Zonenschmelzen eines kristallinen Stabes, insbesondere Halbleiterstabes |
| CH1115564A CH413785A (de) | 1964-02-01 | 1964-08-26 | Verfahren zum Vergrössern des Stabquerschnittes beim tiegelfreien Zonenschmelzen eines lotrecht an seinen Enden gehalterten stabförmigen Körpers aus kristallinem Material, insbesondere aus Halbleiterwerkstoff |
| SE14136/64A SE309965B (da) | 1964-02-01 | 1964-11-23 | |
| GB3442/65A GB1044592A (en) | 1964-02-01 | 1965-01-26 | A method of melting a rod of crystalline material zone by zone |
| NL656506040A NL138766B (nl) | 1964-02-01 | 1965-05-12 | Werkwijze voor het met behulp van kroesloos zonesmelten vergroten van de dwarsdoorsnede van een monokristallijn staafvormig lichaam. |
| FR17994A FR1444259A (fr) | 1964-02-01 | 1965-05-21 | Procédé d'agrandissement de la section transversale de barreaux au cours de la fusion de zone sans creuset d'un corps en forme de barreau, constitué par une matière cristalline, en particulier semiconductrice |
| BE664435D BE664435A (da) | 1964-02-01 | 1965-05-25 | |
| DES98115A DE1275032B (de) | 1964-02-01 | 1965-07-10 | Verfahren zum tiegelfreien Zonenschmelzen eines kristallinen Stabes, insbesondere Halbleiterstabes |
| DES98712A DE1263698B (de) | 1964-02-01 | 1965-08-07 | Verfahren zum tiegelfreien Zonenschmelzen |
| NL6605968A NL6605968A (da) | 1964-02-01 | 1966-05-03 | |
| DK251066AA DK124458B (da) | 1964-02-01 | 1966-05-17 | Fremgangsmåde til digelfri zonesmeltning af en krystallinsk stav, navnlig en halvlederstav. |
| DK260666AA DK124459B (da) | 1964-02-01 | 1966-05-21 | Fremgangsmåde til digelløs zonesmeltning af en krystallinsk stav, navnlig en halvlederstav. |
| NL666607827A NL146402B (nl) | 1964-02-01 | 1966-06-06 | Werkwijze voor het met behulp van kroesloos zonesmelten vergroten van de dwarsdoorsnede van een loodrecht aan zijn uiteinden vastgehouden kristallijn staafvormig lichaam. |
| CH837566A CH442245A (de) | 1964-02-01 | 1966-06-09 | Verfahren zum tiegelfreien Zonenschmelzen eines kristallinen Stabes, insbesondere Halbleiterstabes |
| CH837666A CH442246A (de) | 1964-02-01 | 1966-06-09 | Verfahren zum tiegelfreien Zonenschmelzen eines kristallinen Stabes, insbesondere Halbleiterstabes |
| FR65422A FR90825E (fr) | 1964-02-01 | 1966-06-14 | Procédé d'agrandissement de la section transversale de barreaux au cours de la fusion de zone sans creuset d'un corps en forme de barreau, constitué par une matière cristalline, en particulier semi-conductrice |
| FR68096A FR91257E (fr) | 1964-02-01 | 1966-07-04 | Procédé d'agrandissement de la section transversale de barreaux au cours de la fusion de zone sans creuset d'un corps en forme de barreau, constitué par une matière cristalline, en particulier semiconductrice |
| GB30903/66A GB1079870A (en) | 1964-02-01 | 1966-07-08 | A method of melting a rod of crystalline material zone-by-zone |
| SE9375/66A SE323654B (da) | 1964-02-01 | 1966-07-08 | |
| BE683852D BE683852A (da) | 1964-02-01 | 1966-07-08 | |
| GB31122/66A GB1081600A (en) | 1964-02-01 | 1966-07-11 | A method of melting a rod of crystalline material zone-by-zone |
| US564118A US3477811A (en) | 1964-02-01 | 1966-07-11 | Method of crucible-free zone melting crystalline rods,especially of semiconductive material |
| SE10177/66A SE323655B (da) | 1964-02-01 | 1966-07-26 | |
| BE685153D BE685153A (da) | 1964-02-01 | 1966-08-05 | |
| US664211A US3414388A (en) | 1964-02-01 | 1967-08-29 | Method and apparatus for increasing the cross section of a crystalline rod during crucible-free zone melting |
| US853596A US3658598A (en) | 1964-02-01 | 1969-08-19 | Method of crucible-free zone melting crystalline rods, especially of semiconductor material |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES89317A DE1218404B (de) | 1964-02-01 | 1964-02-01 | Verfahren zum tiegelfreien Zonenschmelzen eines kristallinen Stabes, insbesondere Halbleiterstabes |
| NL656506040A NL138766B (nl) | 1964-02-01 | 1965-05-12 | Werkwijze voor het met behulp van kroesloos zonesmelten vergroten van de dwarsdoorsnede van een monokristallijn staafvormig lichaam. |
| DES98115A DE1275032B (de) | 1964-02-01 | 1965-07-10 | Verfahren zum tiegelfreien Zonenschmelzen eines kristallinen Stabes, insbesondere Halbleiterstabes |
| DES98712A DE1263698B (de) | 1964-02-01 | 1965-08-07 | Verfahren zum tiegelfreien Zonenschmelzen |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| NL6506040A NL6506040A (da) | 1966-11-14 |
| NL138766B true NL138766B (nl) | 1973-05-15 |
Family
ID=27437570
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL656506040A NL138766B (nl) | 1964-02-01 | 1965-05-12 | Werkwijze voor het met behulp van kroesloos zonesmelten vergroten van de dwarsdoorsnede van een monokristallijn staafvormig lichaam. |
| NL6605968A NL6605968A (da) | 1964-02-01 | 1966-05-03 | |
| NL666607827A NL146402B (nl) | 1964-02-01 | 1966-06-06 | Werkwijze voor het met behulp van kroesloos zonesmelten vergroten van de dwarsdoorsnede van een loodrecht aan zijn uiteinden vastgehouden kristallijn staafvormig lichaam. |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL6605968A NL6605968A (da) | 1964-02-01 | 1966-05-03 | |
| NL666607827A NL146402B (nl) | 1964-02-01 | 1966-06-06 | Werkwijze voor het met behulp van kroesloos zonesmelten vergroten van de dwarsdoorsnede van een loodrecht aan zijn uiteinden vastgehouden kristallijn staafvormig lichaam. |
Country Status (9)
| Country | Link |
|---|---|
| US (3) | US3477811A (da) |
| BE (3) | BE664435A (da) |
| CH (3) | CH413785A (da) |
| DE (3) | DE1218404B (da) |
| DK (2) | DK124458B (da) |
| FR (1) | FR1444259A (da) |
| GB (3) | GB1044592A (da) |
| NL (3) | NL138766B (da) |
| SE (3) | SE309965B (da) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1272886B (de) * | 1966-09-24 | 1968-07-18 | Siemens Ag | Vorrichtung zum tiegelfreien Zonenschmelzen eines kristallinen Stabes, insbesondere Halbleiterstabes |
| DE1544301A1 (de) * | 1966-09-28 | 1970-05-27 | Siemens Ag | Verfahren zum tiegelfreien Zonenschmelzen eines kristallinen Stabes,insbesondere Halbleiterstabes |
| DE1619996A1 (de) * | 1967-03-18 | 1971-07-08 | Siemens Ag | Verfahren zum Herstellen eines einkristallinen Stabes,insbesondere aus Halbleitermaterial |
| US3607109A (en) * | 1968-01-09 | 1971-09-21 | Emil R Capita | Method and means of producing a large diameter single-crystal rod from a polycrystal bar |
| DE1960088C3 (de) * | 1969-11-29 | 1974-07-25 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Vorrichtung zum tiegelfreien Zonenschmelzen eines kristallinen Stabes |
| DE2234512C3 (de) * | 1972-07-13 | 1979-04-19 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen von (Umorientierten Halbleitereinkristallstäben mit zur Stabmitte abtauendem spezifischem Widerstand |
| US4002523A (en) * | 1973-09-12 | 1977-01-11 | Texas Instruments Incorporated | Dislocation-free growth of silicon semiconductor crystals with <110> orientation |
| US5156211A (en) * | 1991-06-10 | 1992-10-20 | Impact Selector, Inc. | Remotely adjustable fishing jar and method for using same |
| JP2820027B2 (ja) | 1994-05-24 | 1998-11-05 | 信越半導体株式会社 | 半導体単結晶の成長方法 |
| RU2324017C1 (ru) * | 2006-08-28 | 2008-05-10 | Федеральное Государственное Унитарное Предприятие "Всероссийский научно-исследовательский институт токов высокой частоты им. В.П. Вологдина" (ФГУП ВНИИТВЧ им. В.П. Вологдина) | Способ получения полых монокристаллов кремния |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2972525A (en) * | 1953-02-26 | 1961-02-21 | Siemens Ag | Crucible-free zone melting method and apparatus for producing and processing a rod-shaped body of crystalline substance, particularly semiconductor substance |
| NL235481A (da) * | 1958-02-19 | |||
| US3036892A (en) * | 1958-03-05 | 1962-05-29 | Siemens Ag | Production of hyper-pure monocrystal-line rods in continuous operation |
| US3036812A (en) * | 1958-11-19 | 1962-05-29 | Dewrance & Co | Butterfly valves |
| AT223659B (de) * | 1960-11-25 | 1962-10-10 | Siemens Ag | Verfahren zur Herstellung von versetzungsfreiem einkristallinem Silizium durch tiegelfreies Zonenschmelzen |
-
1964
- 1964-02-01 DE DES89317A patent/DE1218404B/de active Pending
- 1964-08-26 CH CH1115564A patent/CH413785A/de unknown
- 1964-11-23 SE SE14136/64A patent/SE309965B/xx unknown
-
1965
- 1965-01-26 GB GB3442/65A patent/GB1044592A/en not_active Expired
- 1965-05-12 NL NL656506040A patent/NL138766B/xx not_active IP Right Cessation
- 1965-05-21 FR FR17994A patent/FR1444259A/fr not_active Expired
- 1965-05-25 BE BE664435D patent/BE664435A/xx unknown
- 1965-07-10 DE DES98115A patent/DE1275032B/de active Pending
- 1965-08-07 DE DES98712A patent/DE1263698B/de active Pending
-
1966
- 1966-05-03 NL NL6605968A patent/NL6605968A/xx unknown
- 1966-05-17 DK DK251066AA patent/DK124458B/da unknown
- 1966-05-21 DK DK260666AA patent/DK124459B/da unknown
- 1966-06-06 NL NL666607827A patent/NL146402B/xx unknown
- 1966-06-09 CH CH837666A patent/CH442246A/de unknown
- 1966-06-09 CH CH837566A patent/CH442245A/de unknown
- 1966-07-08 SE SE9375/66A patent/SE323654B/xx unknown
- 1966-07-08 GB GB30903/66A patent/GB1079870A/en not_active Expired
- 1966-07-08 BE BE683852D patent/BE683852A/xx unknown
- 1966-07-11 US US564118A patent/US3477811A/en not_active Expired - Lifetime
- 1966-07-11 GB GB31122/66A patent/GB1081600A/en not_active Expired
- 1966-07-26 SE SE10177/66A patent/SE323655B/xx unknown
- 1966-08-05 BE BE685153D patent/BE685153A/xx unknown
-
1967
- 1967-08-29 US US664211A patent/US3414388A/en not_active Expired - Lifetime
-
1969
- 1969-08-19 US US853596A patent/US3658598A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| SE309965B (da) | 1969-04-14 |
| FR1444259A (fr) | 1966-07-01 |
| BE683852A (da) | 1967-01-09 |
| BE664435A (da) | 1965-11-25 |
| US3477811A (en) | 1969-11-11 |
| US3658598A (en) | 1972-04-25 |
| GB1079870A (en) | 1967-08-16 |
| GB1081600A (en) | 1967-08-31 |
| SE323655B (da) | 1970-05-11 |
| DE1218404B (de) | 1966-06-08 |
| DK124458B (da) | 1972-10-23 |
| DE1263698B (de) | 1968-03-21 |
| CH413785A (de) | 1966-05-31 |
| GB1044592A (en) | 1966-10-05 |
| DE1275032B (de) | 1968-08-14 |
| NL146402B (nl) | 1975-07-15 |
| NL6506040A (da) | 1966-11-14 |
| CH442245A (de) | 1967-08-31 |
| US3414388A (en) | 1968-12-03 |
| NL6605968A (da) | 1967-01-11 |
| SE323654B (da) | 1970-05-11 |
| NL6607827A (da) | 1967-02-08 |
| BE685153A (da) | 1967-02-06 |
| DK124459B (da) | 1972-10-23 |
| CH442246A (de) | 1967-08-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| NL159124B (nl) | Werkwijze voor het vervaardigen van een hydrofiel polysiloxan. | |
| NL147499B (nl) | Werkwijze voor het versterken van een bodemgebied. | |
| NL139791B (nl) | Werkwijze voor het verankeren van een bouwwerk. | |
| NL145557B (nl) | Werkwijze voor de bereiding van nucleosiden. | |
| NL152243B (nl) | Werkwijze voor het continu veresteren van acrylzuur. | |
| NL157205B (nl) | Werkwijze voor het bekleden van een spalkframe. | |
| NL138822B (nl) | Werkwijze voor het vervaardigen van een gegoten metalen lichaam. | |
| NL150174B (nl) | Werkwijze voor het vervaardigen van een vezelvlies. | |
| NL146402B (nl) | Werkwijze voor het met behulp van kroesloos zonesmelten vergroten van de dwarsdoorsnede van een loodrecht aan zijn uiteinden vastgehouden kristallijn staafvormig lichaam. | |
| NL154497B (nl) | Werkwijze voor het zuiveren van ruw acetonitrile. | |
| NL148915B (nl) | Werkwijze voor de bereiding van poly-epsilon-caprolactam. | |
| NL139874B (nl) | Werkwijze voor het vervaardigen van een liksteen en liksteen, vervaardigd met de werkwijze. | |
| NL150855B (nl) | Werkwijze voor het reinigen van metalen. | |
| NL156134B (nl) | Werkwijze voor het zuiveren van een nitrile. | |
| NL147449B (nl) | Werkwijze voor het bereiden van polyurethanelastomeren. | |
| NL148612B (nl) | Werkwijze voor het reduceren van een organohalogeensilaan. | |
| NL145828B (nl) | Werkwijze voor het zuiveren van water. | |
| NL151109B (nl) | Werkwijze voor de bereiding van schuimvormige polyamiden. | |
| NL139531B (nl) | Werkwijze voor de bereiding van aminoisoxazolen. | |
| NL149774B (nl) | Werkwijze voor het katalytisch disproportioneren van acyclische alkenen. | |
| NL159750B (nl) | Werkwijze en inrichting voor het vervaardigen van een muur- paneel. | |
| NL143435B (nl) | Werkwijze voor het kroesloos zonesmelten van een halfgeleiderstaaf. | |
| NL6903151A (nl) | Werkwijze voor het dehydrohalogeneren van een gehalogeneerde alifatische koolwaterstof | |
| NL158471B (nl) | Verbetering van een werkwijze voor het katalytisch oligomeriseren van monoalkenen. | |
| NL143434B (nl) | Inrichting voor het kroesloos zonesmelten van een staafvormig lichaam. |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NR80 | Reference from main patent to patent of addition |
Ref document number: 146402 Country of ref document: NL Date of ref document: 19730918 Format of ref document f/p: P |
|
| V1 | Lapsed because of non-payment of the annual fee | ||
| NL80 | Abbreviated name of patent owner mentioned of already nullified patent |
Owner name: SIEMENS |