FR1444259A - Procédé d'agrandissement de la section transversale de barreaux au cours de la fusion de zone sans creuset d'un corps en forme de barreau, constitué par une matière cristalline, en particulier semiconductrice - Google Patents
Procédé d'agrandissement de la section transversale de barreaux au cours de la fusion de zone sans creuset d'un corps en forme de barreau, constitué par une matière cristalline, en particulier semiconductriceInfo
- Publication number
- FR1444259A FR1444259A FR17994A FR17994A FR1444259A FR 1444259 A FR1444259 A FR 1444259A FR 17994 A FR17994 A FR 17994A FR 17994 A FR17994 A FR 17994A FR 1444259 A FR1444259 A FR 1444259A
- Authority
- FR
- France
- Prior art keywords
- crucible
- enlarging
- bar
- cross
- section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
- C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/32—Mechanisms for moving either the charge or the heater
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/08—Downward pulling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/901—Levitation, reduced gravity, microgravity, space
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/91—Downward pulling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/911—Seed or rod holders
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/912—Replenishing liquid precursor, other than a moving zone
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/917—Magnetic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES89317A DE1218404B (de) | 1964-02-01 | 1964-02-01 | Verfahren zum tiegelfreien Zonenschmelzen eines kristallinen Stabes, insbesondere Halbleiterstabes |
NL656506040A NL138766B (nl) | 1964-02-01 | 1965-05-12 | Werkwijze voor het met behulp van kroesloos zonesmelten vergroten van de dwarsdoorsnede van een monokristallijn staafvormig lichaam. |
DES98115A DE1275032B (de) | 1964-02-01 | 1965-07-10 | Verfahren zum tiegelfreien Zonenschmelzen eines kristallinen Stabes, insbesondere Halbleiterstabes |
DES98712A DE1263698B (de) | 1964-02-01 | 1965-08-07 | Verfahren zum tiegelfreien Zonenschmelzen |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1444259A true FR1444259A (fr) | 1966-07-01 |
Family
ID=27437570
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR17994A Expired FR1444259A (fr) | 1964-02-01 | 1965-05-21 | Procédé d'agrandissement de la section transversale de barreaux au cours de la fusion de zone sans creuset d'un corps en forme de barreau, constitué par une matière cristalline, en particulier semiconductrice |
Country Status (9)
Country | Link |
---|---|
US (3) | US3477811A (fr) |
BE (3) | BE664435A (fr) |
CH (3) | CH413785A (fr) |
DE (3) | DE1218404B (fr) |
DK (2) | DK124458B (fr) |
FR (1) | FR1444259A (fr) |
GB (3) | GB1044592A (fr) |
NL (3) | NL138766B (fr) |
SE (3) | SE309965B (fr) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1272886B (de) * | 1966-09-24 | 1968-07-18 | Siemens Ag | Vorrichtung zum tiegelfreien Zonenschmelzen eines kristallinen Stabes, insbesondere Halbleiterstabes |
DE1544301A1 (de) * | 1966-09-28 | 1970-05-27 | Siemens Ag | Verfahren zum tiegelfreien Zonenschmelzen eines kristallinen Stabes,insbesondere Halbleiterstabes |
DE1619996A1 (de) * | 1967-03-18 | 1971-07-08 | Siemens Ag | Verfahren zum Herstellen eines einkristallinen Stabes,insbesondere aus Halbleitermaterial |
US3607109A (en) * | 1968-01-09 | 1971-09-21 | Emil R Capita | Method and means of producing a large diameter single-crystal rod from a polycrystal bar |
DE1960088C3 (de) * | 1969-11-29 | 1974-07-25 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Vorrichtung zum tiegelfreien Zonenschmelzen eines kristallinen Stabes |
DE2234512C3 (de) * | 1972-07-13 | 1979-04-19 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen von (Umorientierten Halbleitereinkristallstäben mit zur Stabmitte abtauendem spezifischem Widerstand |
US4002523A (en) * | 1973-09-12 | 1977-01-11 | Texas Instruments Incorporated | Dislocation-free growth of silicon semiconductor crystals with <110> orientation |
US5156211A (en) * | 1991-06-10 | 1992-10-20 | Impact Selector, Inc. | Remotely adjustable fishing jar and method for using same |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2972525A (en) * | 1953-02-26 | 1961-02-21 | Siemens Ag | Crucible-free zone melting method and apparatus for producing and processing a rod-shaped body of crystalline substance, particularly semiconductor substance |
NL126240C (fr) * | 1958-02-19 | |||
US3036892A (en) * | 1958-03-05 | 1962-05-29 | Siemens Ag | Production of hyper-pure monocrystal-line rods in continuous operation |
US3036812A (en) * | 1958-11-19 | 1962-05-29 | Dewrance & Co | Butterfly valves |
AT223659B (de) * | 1960-11-25 | 1962-10-10 | Siemens Ag | Verfahren zur Herstellung von versetzungsfreiem einkristallinem Silizium durch tiegelfreies Zonenschmelzen |
-
1964
- 1964-02-01 DE DES89317A patent/DE1218404B/de active Pending
- 1964-08-26 CH CH1115564A patent/CH413785A/de unknown
- 1964-11-23 SE SE14136/64A patent/SE309965B/xx unknown
-
1965
- 1965-01-26 GB GB3442/65A patent/GB1044592A/en not_active Expired
- 1965-05-12 NL NL656506040A patent/NL138766B/xx not_active IP Right Cessation
- 1965-05-21 FR FR17994A patent/FR1444259A/fr not_active Expired
- 1965-05-25 BE BE664435D patent/BE664435A/xx unknown
- 1965-07-10 DE DES98115A patent/DE1275032B/de active Pending
- 1965-08-07 DE DES98712A patent/DE1263698B/de active Pending
-
1966
- 1966-05-03 NL NL6605968A patent/NL6605968A/xx unknown
- 1966-05-17 DK DK251066AA patent/DK124458B/da unknown
- 1966-05-21 DK DK260666AA patent/DK124459B/da unknown
- 1966-06-06 NL NL666607827A patent/NL146402B/xx unknown
- 1966-06-09 CH CH837566A patent/CH442245A/de unknown
- 1966-06-09 CH CH837666A patent/CH442246A/de unknown
- 1966-07-08 SE SE9375/66A patent/SE323654B/xx unknown
- 1966-07-08 GB GB30903/66A patent/GB1079870A/en not_active Expired
- 1966-07-08 BE BE683852D patent/BE683852A/xx unknown
- 1966-07-11 GB GB31122/66A patent/GB1081600A/en not_active Expired
- 1966-07-11 US US564118A patent/US3477811A/en not_active Expired - Lifetime
- 1966-07-26 SE SE10177/66A patent/SE323655B/xx unknown
- 1966-08-05 BE BE685153D patent/BE685153A/xx unknown
-
1967
- 1967-08-29 US US664211A patent/US3414388A/en not_active Expired - Lifetime
-
1969
- 1969-08-19 US US853596A patent/US3658598A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US3477811A (en) | 1969-11-11 |
BE664435A (fr) | 1965-11-25 |
NL146402B (nl) | 1975-07-15 |
NL6506040A (fr) | 1966-11-14 |
CH442245A (de) | 1967-08-31 |
DE1263698B (de) | 1968-03-21 |
CH442246A (de) | 1967-08-31 |
GB1044592A (en) | 1966-10-05 |
GB1079870A (en) | 1967-08-16 |
DE1275032B (de) | 1968-08-14 |
SE309965B (fr) | 1969-04-14 |
DK124458B (da) | 1972-10-23 |
NL138766B (nl) | 1973-05-15 |
BE683852A (fr) | 1967-01-09 |
NL6605968A (fr) | 1967-01-11 |
NL6607827A (fr) | 1967-02-08 |
DE1218404B (de) | 1966-06-08 |
SE323654B (fr) | 1970-05-11 |
US3414388A (en) | 1968-12-03 |
DK124459B (da) | 1972-10-23 |
SE323655B (fr) | 1970-05-11 |
GB1081600A (en) | 1967-08-31 |
US3658598A (en) | 1972-04-25 |
BE685153A (fr) | 1967-02-06 |
CH413785A (de) | 1966-05-31 |
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