NL124711C - - Google Patents

Info

Publication number
NL124711C
NL124711C NL124711DA NL124711C NL 124711 C NL124711 C NL 124711C NL 124711D A NL124711D A NL 124711DA NL 124711 C NL124711 C NL 124711C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL124711C publication Critical patent/NL124711C/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
    • H01C17/12—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/006—Thin film resistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49099—Coating resistive material on a base
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Physical Vapour Deposition (AREA)
  • Non-Adjustable Resistors (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
NL124711D 1961-10-03 NL124711C (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US142702A US3242006A (en) 1961-10-03 1961-10-03 Tantalum nitride film resistor

Publications (1)

Publication Number Publication Date
NL124711C true NL124711C (ja)

Family

ID=22500933

Family Applications (2)

Application Number Title Priority Date Filing Date
NL283435D NL283435A (ja) 1961-10-03
NL124711D NL124711C (ja) 1961-10-03

Family Applications Before (1)

Application Number Title Priority Date Filing Date
NL283435D NL283435A (ja) 1961-10-03

Country Status (7)

Country Link
US (1) US3242006A (ja)
BE (2) BE623060A (ja)
DE (1) DE1490927C3 (ja)
FR (1) FR1334290A (ja)
GB (1) GB1015143A (ja)
NL (2) NL124711C (ja)
SE (1) SE308151B (ja)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3369991A (en) * 1965-01-28 1968-02-20 Ibm Apparatus for cathode sputtering including a shielded rf electrode
US3413711A (en) * 1966-09-07 1968-12-03 Western Electric Co Method of making palladium copper contact for soldering
US3537891A (en) * 1967-09-25 1970-11-03 Gen Electric Resistor films of transition metal nitrides and method of forming
US3516914A (en) * 1968-02-26 1970-06-23 United Aircraft Corp Aluminum masking of active components during tantalum/nitride sputtering
US3639165A (en) * 1968-06-20 1972-02-01 Gen Electric Resistor thin films formed by low-pressure deposition of molybdenum and tungsten
US3607384A (en) * 1968-07-11 1971-09-21 Western Electric Co Thin-film resistors having positive resistivity profiles
US3574143A (en) * 1969-02-19 1971-04-06 Bell Telephone Labor Inc Resistive composition of matter and device utilizing same
US3664943A (en) * 1969-06-25 1972-05-23 Oki Electric Ind Co Ltd Method of producing tantalum nitride film resistors
US3622410A (en) * 1969-12-18 1971-11-23 Control Data Corp Method of fabricating film resistors
US3655544A (en) * 1970-03-02 1972-04-11 Gen Electric Refractory metal/refractory metal nitride resistor films
US3664931A (en) * 1970-07-27 1972-05-23 Dieter Gerstenberg Method for fabrication of thin film capacitor
FR2112667A5 (ja) * 1970-11-05 1972-06-23 Lignes Telegraph Telephon
BE793097A (fr) * 1971-12-30 1973-04-16 Western Electric Co Procede pour ajuster le coefficient de resistance en fonction de la temperature d'alliages tantale-aluminium
US3847658A (en) * 1972-01-14 1974-11-12 Western Electric Co Article of manufacture having a film comprising nitrogen-doped beta tantalum
BE791139A (fr) * 1972-01-14 1973-03-01 Western Electric Co Procede pour le depot de beta-tantale dope par l'azote
US3775278A (en) * 1972-03-22 1973-11-27 Bell Telephone Labor Inc Technique for the fabrication of thin film resistors
US3912612A (en) * 1972-07-14 1975-10-14 Westinghouse Electric Corp Method for making thin film superconductors
US3916075A (en) * 1972-07-22 1975-10-28 Philips Corp Chemically highly resistant material
US4325048A (en) * 1980-02-29 1982-04-13 Gould Inc. Deformable flexure element for strain gage transducer and method of manufacture
DE3113745A1 (de) * 1981-04-04 1982-10-21 Robert Bosch Gmbh, 7000 Stuttgart Duennschicht-dehnungsmessstreifen und verfahren zu seiner herstellung
JPS61255001A (ja) * 1985-05-07 1986-11-12 富士ゼロックス株式会社 サ−マルヘツド
US5201923A (en) * 1990-07-27 1993-04-13 Toshiba Tungaloy Co., Ltd. Stoichiometric b1-type tantalum nitride and a sintered body thereof and method of synthesizing the b1-type tantalum nitride
JPH0819516B2 (ja) * 1990-10-26 1996-02-28 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン 薄膜状のアルファＴａを形成するための方法および構造
US5221449A (en) * 1990-10-26 1993-06-22 International Business Machines Corporation Method of making Alpha-Ta thin films
FR2679651B1 (fr) * 1991-07-26 1993-11-12 Schlumberger Services Petroliers Couche mince extensometrique en cermet a base de tantale et de nitrate de tantale, son procede de preparation et son utilisation dans un capteur de pression.
DE69415408T2 (de) 1993-06-28 1999-06-10 Canon K.K., Tokio/Tokyo Wärmeerzeugender, TaNO.8 enthaltender Widerstand, Substrat mit diesem wärmeerzeugenden Widerstand für Flüssigkeitsstrahlkopf, Flüssigkeitsstrahlkopf mit diesem Substrat, und Gerät für einen Flüssigkeitsstrahl mit diesem Flüssigkeitsstrahlkopf
JPH09120713A (ja) * 1995-10-25 1997-05-06 Murata Mfg Co Ltd 抵抗材料組成物

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US420881A (en) * 1890-02-04 Rudolf langhans
US896341A (en) * 1904-11-14 1908-08-18 Gen Electric Filament for incandescent lamps.
US1123585A (en) * 1913-05-31 1915-01-05 Int Agricultural Corp Double-nitrid composition of matter.
AT86825B (de) * 1920-06-14 1921-12-27 Hugo Janistyn Verfahren zur Herstellung von Glühkörpern für Beleuchtungs- und Durchleuchtungszwecke.
US2003592A (en) * 1933-01-03 1935-06-04 Globar Corp Glaze for nonmetallic resistors
DE1069448B (de) * 1953-11-16 1959-11-19 MetallgeseMschaft Aktiengesellschaft, Frankfurt/M Zahnräder
GB830391A (en) * 1955-10-28 1960-03-16 Edwards High Vacuum Ltd Improvements in or relating to cathodic sputtering of metal and dielectric films
US2917442A (en) * 1955-12-30 1959-12-15 Electronique & Automatisme Sa Method of making electroluminescent layers
US3063858A (en) * 1959-07-22 1962-11-13 Nat Res Corp Vapor source and processes for vaporizing iron, nickel and copper

Also Published As

Publication number Publication date
FR1334290A (fr) 1963-08-02
DE1490927C3 (de) 1973-10-31
GB1015143A (en) 1965-12-31
DE1490927A1 (de) 1969-11-13
SE308151B (ja) 1969-02-03
BE623060A (ja) 1962-10-31
US3242006A (en) 1966-03-22
DE1490927B2 (de) 1973-04-12
NL283435A (ja)
BE634012A (ja)

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