NL121135C - - Google Patents

Info

Publication number
NL121135C
NL121135C NL121135DA NL121135C NL 121135 C NL121135 C NL 121135C NL 121135D A NL121135D A NL 121135DA NL 121135 C NL121135 C NL 121135C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL121135C publication Critical patent/NL121135C/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • H01L29/732Vertical transistors
    • H01L29/7325Vertical transistors having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body, e.g. mesa planar transistor
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185Joining of semiconductor bodies for junction formation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Bipolar Transistors (AREA)
NL121135D 1960-01-29 NL121135C (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL247902 1960-01-29

Publications (1)

Publication Number Publication Date
NL121135C true NL121135C (xx)

Family

ID=19752146

Family Applications (2)

Application Number Title Priority Date Filing Date
NL121135D NL121135C (xx) 1960-01-29
NL247902D NL247902A (xx) 1960-01-29 1960-01-29

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL247902D NL247902A (xx) 1960-01-29 1960-01-29

Country Status (5)

Country Link
US (2) US3217214A (xx)
DE (1) DE1284518B (xx)
FR (1) FR1279768A (xx)
GB (1) GB964431A (xx)
NL (2) NL247902A (xx)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1189656B (de) * 1962-08-07 1965-03-25 Siemens Ag Halbleiterbauelement mit mindestens einem pn-UEbergang zwischen Zonen aus verschiedenen Halbleiterstoffen
AU7731575A (en) * 1974-01-18 1976-07-15 Nat Patent Dev Corp Heterojunction devices
FR2386903A1 (fr) * 1977-04-08 1978-11-03 Thomson Csf Transistor a effet de champ sur support a grande bande interdite

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE489418A (xx) * 1948-06-26
US2840494A (en) * 1952-12-31 1958-06-24 Henry W Parker Manufacture of transistors
GB795466A (en) * 1953-10-21 1958-05-21 Siemens Ag Improvements in or relating to junction transistors
DE1021488B (de) * 1954-02-19 1957-12-27 Deutsche Bundespost Halbleiter-Kristallode der Schichtenbauart
US2813233A (en) * 1954-07-01 1957-11-12 Bell Telephone Labor Inc Semiconductive device
GB805493A (en) * 1955-04-07 1958-12-10 Telefunken Gmbh Improved method for the production of semi-conductor devices of npn or pnp type
NL208892A (xx) * 1955-07-13 1900-01-01
DE1064638B (de) * 1956-08-28 1959-09-03 Intermetall Verfahren zur Herstellung von Flaechentransistoren aus drei einkristallinen Schichten
US3141119A (en) * 1957-03-28 1964-07-14 Westinghouse Electric Corp Hyperconductive transistor switches
DE1287009C2 (de) * 1957-08-07 1975-01-09 Western Electric Co. Inc., New York, N.Y. (V.St.A.) Verfahren zur herstellung von halbleiterkoerpern
FR1204019A (fr) * 1957-10-03 1960-01-22 British Thomson Houston Co Ltd Perfectionnements relatifs aux organes semi-conducteurs
FR1193194A (fr) * 1958-03-12 1959-10-30 Perfectionnements aux procédés de fabrication par diffusion des transistors et des redresseurs à jonctions
US2983633A (en) * 1958-04-02 1961-05-09 Clevite Corp Method of forming a transistor structure and contacts therefor
BE580254A (xx) * 1958-07-17
US2966434A (en) * 1958-11-20 1960-12-27 British Thomson Houston Co Ltd Semi-conductor devices
US3087100A (en) * 1959-04-14 1963-04-23 Bell Telephone Labor Inc Ohmic contacts to semiconductor devices
BE589705A (xx) * 1959-04-15
NL258408A (xx) * 1960-06-10

Also Published As

Publication number Publication date
GB964431A (en) 1964-07-22
US3753802A (en) 1973-08-21
DE1284518B (de) 1968-12-05
FR1279768A (fr) 1961-12-22
NL247902A (xx) 1964-02-25
US3217214A (en) 1965-11-09

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