FR1204019A - Perfectionnements relatifs aux organes semi-conducteurs - Google Patents

Perfectionnements relatifs aux organes semi-conducteurs

Info

Publication number
FR1204019A
FR1204019A FR1204019DA FR1204019A FR 1204019 A FR1204019 A FR 1204019A FR 1204019D A FR1204019D A FR 1204019DA FR 1204019 A FR1204019 A FR 1204019A
Authority
FR
France
Prior art keywords
semiconductor components
improvements relating
relating
semiconductor
components
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
British Thomson Houston Co Ltd
Original Assignee
British Thomson Houston Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by British Thomson Houston Co Ltd filed Critical British Thomson Houston Co Ltd
Application granted granted Critical
Publication of FR1204019A publication Critical patent/FR1204019A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
FR1204019D 1957-10-03 1958-10-02 Perfectionnements relatifs aux organes semi-conducteurs Expired FR1204019A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1204019X 1957-10-03

Publications (1)

Publication Number Publication Date
FR1204019A true FR1204019A (fr) 1960-01-22

Family

ID=10882182

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1204019D Expired FR1204019A (fr) 1957-10-03 1958-10-02 Perfectionnements relatifs aux organes semi-conducteurs

Country Status (1)

Country Link
FR (1) FR1204019A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1263934B (de) * 1962-06-29 1968-03-21 Ibm Halbleiterbauelement mit drei Zonen aus verschiedenen, in der kristallographischen [111]-Richtung aneinandergrenzenden Halbleitersubstanzen
DE1284518B (de) * 1960-01-29 1968-12-05 Philips Nv Flaechentransistor und Verfahren zu seiner Herstellung

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1284518B (de) * 1960-01-29 1968-12-05 Philips Nv Flaechentransistor und Verfahren zu seiner Herstellung
DE1263934B (de) * 1962-06-29 1968-03-21 Ibm Halbleiterbauelement mit drei Zonen aus verschiedenen, in der kristallographischen [111]-Richtung aneinandergrenzenden Halbleitersubstanzen

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