GB795466A - Improvements in or relating to junction transistors - Google Patents
Improvements in or relating to junction transistorsInfo
- Publication number
- GB795466A GB795466A GB3037354A GB3037354A GB795466A GB 795466 A GB795466 A GB 795466A GB 3037354 A GB3037354 A GB 3037354A GB 3037354 A GB3037354 A GB 3037354A GB 795466 A GB795466 A GB 795466A
- Authority
- GB
- United Kingdom
- Prior art keywords
- junction
- zone
- semi
- emitter
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 abstract 7
- 239000012535 impurity Substances 0.000 abstract 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- 239000004065 semiconductor Substances 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- 229910052732 germanium Inorganic materials 0.000 abstract 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 3
- 239000000155 melt Substances 0.000 abstract 2
- 238000005204 segregation Methods 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- 238000005275 alloying Methods 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 230000005684 electric field Effects 0.000 abstract 1
- 238000007710 freezing Methods 0.000 abstract 1
- 230000008014 freezing Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Silicon Compounds (AREA)
Abstract
795,466. Semi-conductor devices. SIEMENS & HALSKE AKT.-GES. and ALLGEMEINE ELECTRICITATS GES. Oct. 21, 1954 [Oct. 21, 1953; July 14, 1954], No. 30373/54. Class 37. The conductivity of the base zone of a junction transistor varies in a direction from the emitter to the collector so as to provide a continuous electric field across the base zone. The conductivity variation may be produced by providing variation of impurity concentration across the zone and/or by employing two materials for the semi-conductor body which have different energy gaps, and varying the semi-conductor composition across the zone. The change in impurity concentration may be exponential, being greatest at the emitter junction, and may be produced by diffusing. one or more types of impurity into the surface from the emitter side. Emitter and collector junction and electrodes may then be provided by alloying into the surface, a further impurity characteristic of the opposite conductivity type. A zone of varying composition of materials with different energy gaps, such as silicon and germanium, may be produced by directional cooling of a melt comprising both materials, or by applying a melt of the material with the lowest melting point against a body of the other material (Si) and heating so that the silicon starts to melt at the interface. In order to achieve a desired rate of change of composition (e.g. a linear variation of energy gap to provide a constant field), germanium may be added to the remaining molten silicon. Each material may be separately doped such as by adding boron to the germanium and antimony to the silicon. These impurities have different segregation constants, and therefore a PN junction may be provided during the freezing process; if the difference in segregation coefficients is sufficient, a second PN junction may be achieved to provide a PNP or NPN unit. The semi-conductor material may consist of compounds of the type A III B V . Specification 755,456 is referred to.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1110539X | 1953-10-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB795466A true GB795466A (en) | 1958-05-21 |
Family
ID=6710747
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3037354A Expired GB795466A (en) | 1953-10-21 | 1954-10-21 | Improvements in or relating to junction transistors |
Country Status (2)
| Country | Link |
|---|---|
| FR (1) | FR1110539A (en) |
| GB (1) | GB795466A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1284518B (en) * | 1960-01-29 | 1968-12-05 | Philips Nv | Surface transistor and process for its manufacture |
-
1954
- 1954-10-21 GB GB3037354A patent/GB795466A/en not_active Expired
- 1954-10-21 FR FR1110539D patent/FR1110539A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1284518B (en) * | 1960-01-29 | 1968-12-05 | Philips Nv | Surface transistor and process for its manufacture |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1110539A (en) | 1956-02-14 |
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