FR1279768A - Transistors destinés à être utilisés comme organes d'interruption de circuits électriques - Google Patents

Transistors destinés à être utilisés comme organes d'interruption de circuits électriques

Info

Publication number
FR1279768A
FR1279768A FR850987A FR850987A FR1279768A FR 1279768 A FR1279768 A FR 1279768A FR 850987 A FR850987 A FR 850987A FR 850987 A FR850987 A FR 850987A FR 1279768 A FR1279768 A FR 1279768A
Authority
FR
France
Prior art keywords
interrupters
electric circuits
transistors intended
transistors
intended
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR850987A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of FR1279768A publication Critical patent/FR1279768A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7325—Vertical transistors having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body, e.g. mesa planar transistor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Bipolar Transistors (AREA)
FR850987A 1960-01-29 1961-01-27 Transistors destinés à être utilisés comme organes d'interruption de circuits électriques Expired FR1279768A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL247902 1960-01-29

Publications (1)

Publication Number Publication Date
FR1279768A true FR1279768A (fr) 1961-12-22

Family

ID=19752146

Family Applications (1)

Application Number Title Priority Date Filing Date
FR850987A Expired FR1279768A (fr) 1960-01-29 1961-01-27 Transistors destinés à être utilisés comme organes d'interruption de circuits électriques

Country Status (5)

Country Link
US (2) US3217214A (fr)
DE (1) DE1284518B (fr)
FR (1) FR1279768A (fr)
GB (1) GB964431A (fr)
NL (2) NL247902A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1189656B (de) * 1962-08-07 1965-03-25 Siemens Ag Halbleiterbauelement mit mindestens einem pn-UEbergang zwischen Zonen aus verschiedenen Halbleiterstoffen

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU7731575A (en) * 1974-01-18 1976-07-15 Nat Patent Dev Corp Heterojunction devices
FR2386903A1 (fr) * 1977-04-08 1978-11-03 Thomson Csf Transistor a effet de champ sur support a grande bande interdite

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL84061C (fr) * 1948-06-26
US2840494A (en) * 1952-12-31 1958-06-24 Henry W Parker Manufacture of transistors
GB795466A (en) * 1953-10-21 1958-05-21 Siemens Ag Improvements in or relating to junction transistors
DE1021488B (de) * 1954-02-19 1957-12-27 Deutsche Bundespost Halbleiter-Kristallode der Schichtenbauart
US2813233A (en) * 1954-07-01 1957-11-12 Bell Telephone Labor Inc Semiconductive device
GB805493A (en) * 1955-04-07 1958-12-10 Telefunken Gmbh Improved method for the production of semi-conductor devices of npn or pnp type
NL208892A (fr) * 1955-07-13 1900-01-01
DE1064638B (de) * 1956-08-28 1959-09-03 Intermetall Verfahren zur Herstellung von Flaechentransistoren aus drei einkristallinen Schichten
US3141119A (en) * 1957-03-28 1964-07-14 Westinghouse Electric Corp Hyperconductive transistor switches
NL190814A (fr) * 1957-08-07 1900-01-01
FR1204019A (fr) * 1957-10-03 1960-01-22 British Thomson Houston Co Ltd Perfectionnements relatifs aux organes semi-conducteurs
FR1193194A (fr) * 1958-03-12 1959-10-30 Perfectionnements aux procédés de fabrication par diffusion des transistors et des redresseurs à jonctions
US2983633A (en) * 1958-04-02 1961-05-09 Clevite Corp Method of forming a transistor structure and contacts therefor
BE580254A (fr) * 1958-07-17
US2966434A (en) * 1958-11-20 1960-12-27 British Thomson Houston Co Ltd Semi-conductor devices
US3087100A (en) * 1959-04-14 1963-04-23 Bell Telephone Labor Inc Ohmic contacts to semiconductor devices
NL125412C (fr) * 1959-04-15
NL258408A (fr) * 1960-06-10

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1189656B (de) * 1962-08-07 1965-03-25 Siemens Ag Halbleiterbauelement mit mindestens einem pn-UEbergang zwischen Zonen aus verschiedenen Halbleiterstoffen

Also Published As

Publication number Publication date
NL247902A (fr) 1964-02-25
US3217214A (en) 1965-11-09
GB964431A (en) 1964-07-22
NL121135C (fr)
DE1284518B (de) 1968-12-05
US3753802A (en) 1973-08-21

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