BE589705A - - Google Patents
Info
- Publication number
- BE589705A BE589705A BE589705DA BE589705A BE 589705 A BE589705 A BE 589705A BE 589705D A BE589705D A BE 589705DA BE 589705 A BE589705 A BE 589705A
- Authority
- BE
- Belgium
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/18—Controlling or regulating
- C30B31/185—Pattern diffusion, e.g. by using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31608—Deposition of SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S252/00—Compositions
- Y10S252/95—Doping agent source material
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US806683A US3089793A (en) | 1959-04-15 | 1959-04-15 | Semiconductor devices and methods of making them |
US835577A US3006791A (en) | 1959-04-15 | 1959-08-24 | Semiconductor devices |
US87367A US3196058A (en) | 1959-04-15 | 1961-02-06 | Method of making semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
BE589705A true BE589705A (xx) |
Family
ID=27375665
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE589705D BE589705A (xx) | 1959-04-15 |
Country Status (7)
Country | Link |
---|---|
US (3) | US3089793A (xx) |
JP (1) | JPS493308B1 (xx) |
BE (1) | BE589705A (xx) |
DE (2) | DE1232931B (xx) |
GB (2) | GB946229A (xx) |
NL (5) | NL255154A (xx) |
SE (1) | SE325643B (xx) |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3090014A (en) * | 1959-12-17 | 1963-05-14 | Bell Telephone Labor Inc | Negative resistance device modulator |
NL121135C (xx) * | 1960-01-29 | |||
US3114663A (en) * | 1960-03-29 | 1963-12-17 | Rca Corp | Method of providing semiconductor wafers with protective and masking coatings |
NL258408A (xx) * | 1960-06-10 | |||
NL269092A (xx) * | 1960-09-09 | 1900-01-01 | ||
NL268758A (xx) * | 1960-09-20 | |||
US3304200A (en) * | 1961-03-08 | 1967-02-14 | Texas Instruments Inc | Semiconductor devices and methods of making same |
US3242392A (en) * | 1961-04-06 | 1966-03-22 | Nippon Electric Co | Low rc semiconductor diode |
NL280849A (xx) * | 1961-07-12 | 1900-01-01 | ||
BE621451A (xx) * | 1961-08-16 | |||
US3233305A (en) * | 1961-09-26 | 1966-02-08 | Ibm | Switching transistors with controlled emitter-base breakdown |
BE623233A (xx) * | 1961-10-12 | 1900-01-01 | ||
BE625431A (xx) * | 1961-11-30 | |||
NL287642A (xx) * | 1962-01-18 | |||
US3200019A (en) * | 1962-01-19 | 1965-08-10 | Rca Corp | Method for making a semiconductor device |
NL291461A (xx) * | 1962-04-18 | |||
NL296617A (xx) * | 1962-08-28 | |||
US3271201A (en) * | 1962-10-30 | 1966-09-06 | Itt | Planar semiconductor devices |
US3319138A (en) * | 1962-11-27 | 1967-05-09 | Texas Instruments Inc | Fast switching high current avalanche transistor |
US3228812A (en) * | 1962-12-04 | 1966-01-11 | Dickson Electronics Corp | Method of forming semiconductors |
US3249831A (en) * | 1963-01-04 | 1966-05-03 | Westinghouse Electric Corp | Semiconductor controlled rectifiers with a p-n junction having a shallow impurity concentration gradient |
US3326729A (en) * | 1963-08-20 | 1967-06-20 | Hughes Aircraft Co | Epitaxial method for the production of microcircuit components |
BR6462522D0 (pt) * | 1963-10-28 | 1973-05-15 | Rca Corp | Dispositivos semicondutores e processo de fabrica-los |
US3313012A (en) * | 1963-11-13 | 1967-04-11 | Texas Instruments Inc | Method for making a pnpn device by diffusing |
US3306768A (en) * | 1964-01-08 | 1967-02-28 | Motorola Inc | Method of forming thin oxide films |
US3335340A (en) * | 1964-02-24 | 1967-08-08 | Ibm | Combined transistor and testing structures and fabrication thereof |
US3282749A (en) * | 1964-03-26 | 1966-11-01 | Gen Electric | Method of controlling diffusion |
US3343049A (en) * | 1964-06-18 | 1967-09-19 | Ibm | Semiconductor devices and passivation thereof |
DE1297237B (de) * | 1964-09-18 | 1969-06-12 | Itt Ind Gmbh Deutsche | Flaechentransistor und Verfahren zu seiner Herstellung |
US3442723A (en) * | 1964-12-30 | 1969-05-06 | Sony Corp | Method of making a semiconductor junction by diffusion |
US3388009A (en) * | 1965-06-23 | 1968-06-11 | Ion Physics Corp | Method of forming a p-n junction by an ionic beam |
US3454434A (en) * | 1966-05-09 | 1969-07-08 | Motorola Inc | Multilayer semiconductor device |
US3462311A (en) * | 1966-05-20 | 1969-08-19 | Globe Union Inc | Semiconductor device having improved resistance to radiation damage |
US3508982A (en) * | 1967-01-03 | 1970-04-28 | Itt | Method of making an ultra-violet selective template |
US3471924A (en) * | 1967-04-13 | 1969-10-14 | Globe Union Inc | Process for manufacturing inexpensive semiconductor devices |
US3892607A (en) * | 1967-04-28 | 1975-07-01 | Philips Corp | Method of manufacturing semiconductor devices |
JPS5113996B1 (xx) * | 1968-01-30 | 1976-05-06 | ||
US3611062A (en) * | 1968-04-17 | 1971-10-05 | Ibm | Passive elements for solid-state integrated circuits |
US3837882A (en) * | 1971-09-02 | 1974-09-24 | Kewanee Oil Co | Optical bodies with non-epitaxially grown crystals on surface |
US3849789A (en) * | 1972-11-01 | 1974-11-19 | Gen Electric | Schottky barrier diodes |
US4151009A (en) * | 1978-01-13 | 1979-04-24 | Bell Telephone Laboratories, Incorporated | Fabrication of high speed transistors by compensation implant near collector-base junction |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2841510A (en) * | 1958-07-01 | Method of producing p-n junctions in | ||
US2215128A (en) * | 1939-06-07 | 1940-09-17 | Meulendyke Charles Edmund | Material and process for obtaining metal printing plates with silver halide emulsions |
US2569347A (en) * | 1948-06-26 | 1951-09-25 | Bell Telephone Labor Inc | Circuit element utilizing semiconductive material |
DE894293C (de) * | 1951-06-29 | 1953-10-22 | Western Electric Co | Verfahren zur Herstellung eines Kristalls aus Halbleitermaterial |
US2829422A (en) * | 1952-05-21 | 1958-04-08 | Bell Telephone Labor Inc | Methods of fabricating semiconductor signal translating devices |
US2796562A (en) * | 1952-06-02 | 1957-06-18 | Rca Corp | Semiconductive device and method of fabricating same |
US2811653A (en) * | 1953-05-22 | 1957-10-29 | Rca Corp | Semiconductor devices |
US2816847A (en) * | 1953-11-18 | 1957-12-17 | Bell Telephone Labor Inc | Method of fabricating semiconductor signal translating devices |
BE534505A (xx) * | 1953-12-30 | |||
US2726172A (en) * | 1954-08-20 | 1955-12-06 | Commercial Solvents Corp | Treating vials with silicone |
US2804405A (en) * | 1954-12-24 | 1957-08-27 | Bell Telephone Labor Inc | Manufacture of silicon devices |
NL207910A (xx) * | 1955-06-20 | |||
US2832702A (en) * | 1955-08-18 | 1958-04-29 | Hughes Aircraft Co | Method of treating semiconductor bodies for translating devices |
NL109817C (xx) * | 1955-12-02 | |||
BE558436A (xx) * | 1956-06-18 | |||
US2914715A (en) * | 1956-07-02 | 1959-11-24 | Bell Telephone Labor Inc | Semiconductor diode |
US2842831A (en) * | 1956-08-30 | 1958-07-15 | Bell Telephone Labor Inc | Manufacture of semiconductor devices |
US2905873A (en) * | 1956-09-17 | 1959-09-22 | Rca Corp | Semiconductor power devices and method of manufacture |
US2912312A (en) * | 1956-10-10 | 1959-11-10 | Cleveland Metal Specialties Co | Method of making components for printed circuits |
NL224173A (xx) * | 1957-01-18 | |||
US2911539A (en) * | 1957-12-18 | 1959-11-03 | Bell Telephone Labor Inc | Photocell array |
US2985805A (en) * | 1958-03-05 | 1961-05-23 | Rca Corp | Semiconductor devices |
NL241488A (xx) * | 1958-07-21 | 1900-01-01 | ||
US2930722A (en) * | 1959-02-03 | 1960-03-29 | Bell Telephone Labor Inc | Method of treating silicon |
-
0
- NL NL155412D patent/NL155412C/xx active
- NL NL125412D patent/NL125412C/xx active
- NL NL122784D patent/NL122784C/xx active
- NL NL250542D patent/NL250542A/xx unknown
- BE BE589705D patent/BE589705A/xx unknown
- NL NL255154D patent/NL255154A/xx unknown
-
1959
- 1959-04-15 US US806683A patent/US3089793A/en not_active Expired - Lifetime
- 1959-08-24 US US835577A patent/US3006791A/en not_active Expired - Lifetime
-
1960
- 1960-04-01 GB GB11684/60A patent/GB946229A/en not_active Expired
- 1960-04-12 DE DER27748A patent/DE1232931B/de active Pending
- 1960-07-30 DE DER28445A patent/DE1292256B/de active Pending
- 1960-08-04 GB GB27116/60A patent/GB959447A/en not_active Expired
-
1961
- 1961-02-06 US US87367A patent/US3196058A/en not_active Expired - Lifetime
-
1965
- 1965-08-22 SE SE15961/65A patent/SE325643B/xx unknown
-
1970
- 1970-07-03 JP JP45058714A patent/JPS493308B1/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
DE1232931B (de) | 1967-01-26 |
NL155412C (xx) | |
SE325643B (xx) | 1970-07-06 |
NL122784C (xx) | |
NL255154A (xx) | |
NL250542A (xx) | |
NL125412C (xx) | |
DE1292256B (de) | 1969-04-10 |
US3006791A (en) | 1961-10-31 |
GB946229A (en) | 1964-01-08 |
JPS493308B1 (xx) | 1974-01-25 |
US3196058A (en) | 1965-07-20 |
GB959447A (en) | 1964-06-03 |
US3089793A (en) | 1963-05-14 |