NL105904C - - Google Patents

Info

Publication number
NL105904C
NL105904C NL105904DA NL105904C NL 105904 C NL105904 C NL 105904C NL 105904D A NL105904D A NL 105904DA NL 105904 C NL105904 C NL 105904C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL105904C publication Critical patent/NL105904C/xx

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B28D5/022Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901Levitation, reduced gravity, microgravity, space
    • Y10S117/902Specified orientation, shape, crystallography, or size of seed or substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
NL105904D 1955-12-30 NL105904C (me)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US556642A US2858730A (en) 1955-12-30 1955-12-30 Germanium crystallographic orientation

Publications (1)

Publication Number Publication Date
NL105904C true NL105904C (me)

Family

ID=24222209

Family Applications (2)

Application Number Title Priority Date Filing Date
NL105904D NL105904C (me) 1955-12-30
NL213347D NL213347A (me) 1955-12-30

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL213347D NL213347A (me) 1955-12-30

Country Status (5)

Country Link
US (1) US2858730A (me)
DE (1) DE1165163B (me)
FR (1) FR1179252A (me)
GB (1) GB846915A (me)
NL (2) NL213347A (me)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2984549A (en) * 1957-06-21 1961-05-16 Clevite Corp Semiconductor product and method
US2971869A (en) * 1957-08-27 1961-02-14 Motorola Inc Semiconductor assembly and method of forming same
US2988433A (en) * 1957-12-31 1961-06-13 Ibm Method of forming crystals
US3041226A (en) * 1958-04-02 1962-06-26 Hughes Aircraft Co Method of preparing semiconductor crystals
GB852003A (en) * 1958-06-10 1960-10-19 Siemens Edison Swan Ltd Improvements relating to the production of wafers of semi-conductor material
DE1114649B (de) * 1960-03-17 1961-10-05 Zeiss Carl Fa Optisches Geraet zur Orientierung von Einkristallen nach der Kristallachse
US3172791A (en) * 1960-03-31 1965-03-09 Crystallography orientation of a cy- lindrical rod of semiconductor mate- rial in a vapor deposition process to obtain a polygonal shaped rod
US3143447A (en) * 1960-12-22 1964-08-04 Marriner K Norr Chemical etches for lead telluride crystals
US3247576A (en) * 1962-10-30 1966-04-26 Ibm Method of fabrication of crystalline shapes
US3244488A (en) * 1963-06-06 1966-04-05 Perkin Elmer Corp Plural directional growing of crystals
US3793712A (en) * 1965-02-26 1974-02-26 Texas Instruments Inc Method of forming circuit components within a substrate
FR96065E (fr) * 1967-11-01 1972-05-19 Western Electric Co Procédé de gravure précise de semiconducteurs.
US3634737A (en) * 1969-02-07 1972-01-11 Tokyo Shibaura Electric Co Semiconductor device
US3603848A (en) * 1969-02-27 1971-09-07 Tokyo Shibaura Electric Co Complementary field-effect-type semiconductor device
US3579057A (en) * 1969-08-18 1971-05-18 Rca Corp Method of making a semiconductor article and the article produced thereby
US3731861A (en) * 1971-10-28 1973-05-08 Rca Corp Method for dicing materials having a hexagonal crystal structure
US3782836A (en) * 1971-11-11 1974-01-01 Texas Instruments Inc Surface irregularity analyzing method
US3834265A (en) * 1973-02-16 1974-09-10 Gillette Co Ceramic cutting instruments
US4084354A (en) * 1977-06-03 1978-04-18 International Business Machines Corporation Process for slicing boules of single crystal material
DE3109229C2 (de) * 1981-03-11 1985-05-02 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen Kristalline Germaniummodifikation und Verfahren zu ihrer Herstellung
US4490441A (en) * 1982-07-06 1984-12-25 Honeywell Inc. Encapsulated CDTe boules for multiblade wafering
US4564494A (en) * 1982-07-06 1986-01-14 Honeywell Inc. Encapsulant of CdTe boules for multiblade wafering
US4697489A (en) * 1984-07-05 1987-10-06 Kim George A Ultramicrotome tool
US4643161A (en) * 1984-07-05 1987-02-17 Kim George A Method of machining hard and brittle material
US4581969A (en) * 1984-07-05 1986-04-15 Kim George A Ultramicrotome diamond knife
US4759130A (en) * 1985-11-12 1988-07-26 U.S. Philips Corporation Goniometer head arrangement
US4667650A (en) * 1985-11-21 1987-05-26 Pq Corporation Mounting beam for preparing wafers
US4773951A (en) * 1986-01-07 1988-09-27 Atlantic Richfield Company Method of manufacturing wafers of semiconductor material
US4884887A (en) * 1987-01-23 1989-12-05 Hewlett-Packard Company Method for positioning a crystal ingot
DE69631353T2 (de) * 1995-04-22 2004-12-09 Hct Shaping Systems Sa Verfahren zur Orientierung von Einkristallen zum Schneiden in eine Schneidemaschine und Einrichtung zur Durchführung des Verfahrens
US5769941A (en) * 1996-05-01 1998-06-23 Motorola, Inc. Method of forming semiconductor material
CN102528951A (zh) * 2010-12-28 2012-07-04 湖北泰晶电子科技有限公司 一种取石英晶体籽晶片的方法
CN113232176B (zh) * 2021-05-06 2022-07-12 西安交通大学 用于不同晶体取向铸造单晶高温合金的籽晶切割装置及方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2423357A (en) * 1942-01-13 1947-07-01 Gen Electric Method of determining the optical axes of quartz crystals

Also Published As

Publication number Publication date
GB846915A (en) 1960-09-07
US2858730A (en) 1958-11-04
NL213347A (me)
DE1165163B (de) 1964-03-12
FR1179252A (fr) 1959-05-22

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