NL1000253C2 - Halfgeleiderlasertoestel en de wijze van vervaardiging daarvan. - Google Patents

Halfgeleiderlasertoestel en de wijze van vervaardiging daarvan.

Info

Publication number
NL1000253C2
NL1000253C2 NL1000253A NL1000253A NL1000253C2 NL 1000253 C2 NL1000253 C2 NL 1000253C2 NL 1000253 A NL1000253 A NL 1000253A NL 1000253 A NL1000253 A NL 1000253A NL 1000253 C2 NL1000253 C2 NL 1000253C2
Authority
NL
Netherlands
Prior art keywords
manufacture
semiconductor laser
laser device
semiconductor
laser
Prior art date
Application number
NL1000253A
Other languages
English (en)
Other versions
NL1000253A1 (nl
Inventor
Nobuaki Kaneno
Syoichi Karakida
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of NL1000253A1 publication Critical patent/NL1000253A1/nl
Application granted granted Critical
Publication of NL1000253C2 publication Critical patent/NL1000253C2/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
NL1000253A 1994-04-28 1995-04-28 Halfgeleiderlasertoestel en de wijze van vervaardiging daarvan. NL1000253C2 (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6091257A JPH07297485A (ja) 1994-04-28 1994-04-28 半導体レーザ装置，及びその製造方法

Publications (2)

Publication Number Publication Date
NL1000253A1 NL1000253A1 (nl) 1995-10-30
NL1000253C2 true NL1000253C2 (nl) 1996-11-12

Family

ID=14021378

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1000253A NL1000253C2 (nl) 1994-04-28 1995-04-28 Halfgeleiderlasertoestel en de wijze van vervaardiging daarvan.

Country Status (4)

Country Link
US (1) US5644587A (nl)
JP (1) JPH07297485A (nl)
DE (1) DE19515752A1 (nl)
NL (1) NL1000253C2 (nl)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3303631B2 (ja) * 1995-01-04 2002-07-22 キヤノン株式会社 半導体量子井戸構造
DE19605794A1 (de) * 1996-02-16 1997-08-21 Sel Alcatel Ag Monolithisch integriertes optisches oder optoelektronisches Halbleiterbauelement und Herstellungsverfahren
JP2003289175A (ja) * 2002-01-28 2003-10-10 Sharp Corp 半導体レーザ素子
JP2003324248A (ja) * 2002-04-30 2003-11-14 Sony Corp 半導体レーザ素子
US20040001521A1 (en) * 2002-06-27 2004-01-01 Ashish Tandon Laser having active region formed above substrate
JP2005039140A (ja) * 2003-07-18 2005-02-10 Sharp Corp 酸化物半導体レーザ素子
JP2005050993A (ja) * 2003-07-28 2005-02-24 Sharp Corp 酸化物半導体レーザ素子
TWI268033B (en) * 2005-12-28 2006-12-01 Landmark Optoelectronics Corp Active-layer energy band of laser diode and monomer structure forming the active layer
US8198566B2 (en) * 2006-05-24 2012-06-12 Electro Scientific Industries, Inc. Laser processing of workpieces containing low-k dielectric material
JP5185030B2 (ja) * 2008-09-05 2013-04-17 日本電信電話株式会社 半導体構造及びその半導体構造を用いた光半導体素子
JP2011181639A (ja) * 2010-02-26 2011-09-15 Hamamatsu Photonics Kk 分布帰還型半導体レーザ

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01251685A (ja) * 1988-03-30 1989-10-06 Nec Corp 光増幅器
JPH04372188A (ja) * 1991-06-20 1992-12-25 Furukawa Electric Co Ltd:The 半導体レーザ素子

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0661570A (ja) * 1992-08-04 1994-03-04 Matsushita Electric Ind Co Ltd 歪多重量子井戸半導体レーザ

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01251685A (ja) * 1988-03-30 1989-10-06 Nec Corp 光増幅器
JPH04372188A (ja) * 1991-06-20 1992-12-25 Furukawa Electric Co Ltd:The 半導体レーザ素子

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
H.ISHIKAWA: "Theoretical gain of strained quantum well grown on an InGaAs ternary substrate", APPLIED PHYSICS LETTERS, vol. 63, no. 6, 9 August 1993 (1993-08-09), WOODBURY, US, pages 712 - 714, XP000486876 *
H.TANAKA: "780nm Band TM-mode laser operation of GaAsP/AlGaAs tensile strained quantum-well lasers", ELECTRONICS LETTERS, vol. 29, no. 18, 2 September 1993 (1993-09-02), STEVENAGE, GB, pages 1611 - 1613, XP000395188 *
M.WATANABE ET AL.: "High temperature (77 degree C) operation of 634nm InGaAlP multiquantum-well laser diodes with tensile strained quantum wells", APPLIED PHYSICS LETTERS, vol. 63, no. 11, 13 September 1993 (1993-09-13), NEW YORK, US, pages 1486 - 1488, XP002005081 *
P.J.A.THIJS ET AL.: "High-performance lambda=1.3um InGaAsP-InP strained -layer quantum well lasers", JOURNAL OF LIGHTWAVE TECHNOLOGY, vol. 12, no. 1, January 1994 (1994-01-01), NEW YORK, US, pages 28 - 37, XP000460000 *
PATENT ABSTRACTS OF JAPAN vol. 014, no. 002 (E - 868) 8 January 1989 (1989-01-08) *
PATENT ABSTRACTS OF JAPAN vol. 017, no. 253 (E - 1367) 19 May 1993 (1993-05-19) *

Also Published As

Publication number Publication date
US5644587A (en) 1997-07-01
JPH07297485A (ja) 1995-11-10
DE19515752A1 (de) 1995-11-02
NL1000253A1 (nl) 1995-10-30

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Legal Events

Date Code Title Description
AD1A A request for search or an international type search has been filed
RD2N Patents in respect of which a decision has been taken or a report has been made (novelty report)

Effective date: 19960708

PD2B A search report has been drawn up
VD1 Lapsed due to non-payment of the annual fee

Effective date: 20011101