MY197365A - Apparatus and method for the plasma treatment of wafers - Google Patents

Apparatus and method for the plasma treatment of wafers

Info

Publication number
MY197365A
MY197365A MYPI2017703686A MYPI2017703686A MY197365A MY 197365 A MY197365 A MY 197365A MY PI2017703686 A MYPI2017703686 A MY PI2017703686A MY PI2017703686 A MYPI2017703686 A MY PI2017703686A MY 197365 A MY197365 A MY 197365A
Authority
MY
Malaysia
Prior art keywords
gas
wafers
gas guiding
receiving space
process chamber
Prior art date
Application number
MYPI2017703686A
Other languages
English (en)
Inventor
Michael Klick
Ralf Rothe
Wilfried Lerch
Johannes Rehli
Original Assignee
Centrotherm Int Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centrotherm Int Ag filed Critical Centrotherm Int Ag
Publication of MY197365A publication Critical patent/MY197365A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
MYPI2017703686A 2015-04-02 2016-03-31 Apparatus and method for the plasma treatment of wafers MY197365A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102015004430.3A DE102015004430B4 (de) 2015-04-02 2015-04-02 Vorrichtung und Verfahren zur Plasmabehandlung von Wafern
PCT/EP2016/057174 WO2016156552A1 (de) 2015-04-02 2016-03-31 Vorrichtung und verfahren zur plasmabehandlung von wafern

Publications (1)

Publication Number Publication Date
MY197365A true MY197365A (en) 2023-06-14

Family

ID=55699622

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2017703686A MY197365A (en) 2015-04-02 2016-03-31 Apparatus and method for the plasma treatment of wafers

Country Status (6)

Country Link
EP (1) EP3278356A1 (ko)
KR (1) KR20170135901A (ko)
CN (1) CN108028162B (ko)
DE (1) DE102015004430B4 (ko)
MY (1) MY197365A (ko)
WO (1) WO2016156552A1 (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017214687A1 (de) 2017-08-22 2019-02-28 centrotherm international AG Behandlungsvorrichtung für Substrate und Verfahren zum Betrieb einer solchen Behandlungsvorrichtung
KR102205200B1 (ko) * 2018-09-20 2021-01-20 주식회사 엔씨디 박막 증착장치
DE102019002647A1 (de) * 2019-04-10 2020-10-15 Plasmetrex Gmbh Waferboot und Behandlungsvorrichtung für Wafer
CN111180362B (zh) * 2020-01-02 2023-09-01 长江存储科技有限责任公司 一种气体处理炉和提高晶圆表面气体处理均匀性的方法
DE102020214063A1 (de) 2020-03-13 2021-09-16 centrotherm international AG Verfahren und system zur selektiven abgasbehandlung
DE102020112641A1 (de) 2020-05-11 2021-11-11 Hanwha Q Cells Gmbh Haltevorrichtung und Verwendung der Haltevorrichtung
CN115491662B (zh) * 2022-09-29 2023-11-17 西实显示高新材料(沈阳)有限公司 Icp设备

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6423524A (en) * 1987-07-20 1989-01-26 Toyoko Kagaku Kk Method and equipment for vertical-type low-pressure vapor growth
US5591268A (en) * 1994-10-14 1997-01-07 Fujitsu Limited Plasma process with radicals
DE19962896A1 (de) * 1999-10-13 2001-05-03 Univ Konstanz Verfahren und Vorrichtung zur Herstellung von Solarzellen
JP4983159B2 (ja) * 2006-09-01 2012-07-25 東京エレクトロン株式会社 被処理体の酸化方法、酸化装置及び記憶媒体
US8043430B2 (en) * 2006-12-20 2011-10-25 Lam Research Corporation Methods and apparatuses for controlling gas flow conductance in a capacitively-coupled plasma processing chamber
JP5058727B2 (ja) * 2007-09-06 2012-10-24 東京エレクトロン株式会社 天板構造及びこれを用いたプラズマ処理装置
US9068263B2 (en) * 2009-02-27 2015-06-30 Sandvik Thermal Process, Inc. Apparatus for manufacture of solar cells
DE102010025483A1 (de) 2010-06-29 2011-12-29 Centrotherm Thermal Solutions Gmbh + Co. Kg Verfahren und Vorrichtung zum Kalibrieren eines Wafertransportroboters
KR101313262B1 (ko) * 2010-07-12 2013-09-30 삼성전자주식회사 화학 기상 증착 장치 및 이를 이용한 반도체 에피 박막의 제조 방법
DE102011109444A1 (de) 2011-08-04 2013-02-07 Centrotherm Photovoltaics Ag Abstandselement für Platten eines Waferbootes

Also Published As

Publication number Publication date
KR20170135901A (ko) 2017-12-08
WO2016156552A1 (de) 2016-10-06
CN108028162B (zh) 2020-09-01
CN108028162A (zh) 2018-05-11
EP3278356A1 (de) 2018-02-07
DE102015004430B4 (de) 2017-01-05
DE102015004430A1 (de) 2016-10-06

Similar Documents

Publication Publication Date Title
MY197365A (en) Apparatus and method for the plasma treatment of wafers
MX2019012614A (es) Sistema de generacion de gas reactivo y metodo de tratamiento mediante el uso de gas reactivo.
PH12017501628A1 (en) Wafer dryer apparatus and method
WO2014127027A3 (en) Method and apparatus for plasma dicing a semi-conductor wafer
TW201613422A (en) Frequency tuning for pulsed radio frequency plasma processing
MX2015014659A (es) Proceso y aparato para endurecer termoquimicamente piezas a trabajar.
GB201121034D0 (en) Apparatus and method for depositing a layer onto a substrate
JP2015138913A5 (ko)
IL275776B2 (en) Chemical solution and method for substrate treatment
GB2540314A (en) Etch rate enhancement for a silicon etch process through etch chamber pretreatment
TW201130042A (en) Substrate processing method and substrate processing apparatus
WO2015050582A3 (en) Substrate processing apparatus and method
JP2016092342A5 (ko)
WO2016072850A3 (en) Atomic layer deposition apparatus and method for processing substrates using an apparatus
TW201614087A (en) Plasma processing apparatus and plasma processing method
WO2014137905A3 (en) Method and apparatus for plasma dicing a semi-conductor wafer
SG11202010340WA (en) Semiconductor processing apparatus for high rf power process
SG10201701124TA (en) Substrate treating apparatus and substrate treating method
MX360902B (es) Proceso y dispositivo para generar un plasma energizado mediante una energia de microondas en el campo de una resonancia ciclotronica electronica (rce) para ejecutar un tratamiento de superficie o aplicar un recubrimiento alrededor de un componente filiforme.
JP2020061534A5 (ko)
SG11201803759QA (en) Water treatment apparatus and water treatment method
TW201612944A (en) Plasma processing apparatus
MX2015014529A (es) Aparato para el tratamiento por plasma de superficies y metodo para el tratamiento de superficies con plasma.
TW201614732A (en) Method for increasing oxide etch selectivity
WO2018189130A3 (de) Verfahren und vorrichtung zur chemischen bearbeitung eines halbleiter-substrats