MY160150A - Composition for metal plating comprising suppressing agent for void free submicron feature filling - Google Patents

Composition for metal plating comprising suppressing agent for void free submicron feature filling

Info

Publication number
MY160150A
MY160150A MYPI2012000018A MYPI2012000018A MY160150A MY 160150 A MY160150 A MY 160150A MY PI2012000018 A MYPI2012000018 A MY PI2012000018A MY PI2012000018 A MYPI2012000018 A MY PI2012000018A MY 160150 A MY160150 A MY 160150A
Authority
MY
Malaysia
Prior art keywords
alkylene oxide
composition
metal plating
suppressing agent
void free
Prior art date
Application number
MYPI2012000018A
Other languages
English (en)
Inventor
Cornelia Röger-Göpfert
Roman Benedikt Raether
Dieter Mayer
Alexandra Haag
Charlotte Emnet
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of MY160150A publication Critical patent/MY160150A/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/38Electroplating: Baths therefor from solutions of copper
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/38Electroplating: Baths therefor from solutions of copper
    • C25D3/40Electroplating: Baths therefor from solutions of copper from cyanide baths, e.g. with Cu+

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Electrochemistry (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Physics & Mathematics (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Chemically Coating (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Polyethers (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Paints Or Removers (AREA)
MYPI2012000018A 2009-07-30 2010-07-19 Composition for metal plating comprising suppressing agent for void free submicron feature filling MY160150A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US22980909P 2009-07-30 2009-07-30

Publications (1)

Publication Number Publication Date
MY160150A true MY160150A (en) 2017-02-28

Family

ID=42733749

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2012000018A MY160150A (en) 2009-07-30 2010-07-19 Composition for metal plating comprising suppressing agent for void free submicron feature filling

Country Status (11)

Country Link
US (1) US9617647B2 (cg-RX-API-DMAC7.html)
EP (1) EP2459779B1 (cg-RX-API-DMAC7.html)
JP (2) JP5775077B2 (cg-RX-API-DMAC7.html)
KR (1) KR101738708B1 (cg-RX-API-DMAC7.html)
CN (1) CN102471910B (cg-RX-API-DMAC7.html)
IL (1) IL217234A (cg-RX-API-DMAC7.html)
MY (1) MY160150A (cg-RX-API-DMAC7.html)
RU (1) RU2539895C2 (cg-RX-API-DMAC7.html)
SG (2) SG10201404301WA (cg-RX-API-DMAC7.html)
TW (1) TWI515341B (cg-RX-API-DMAC7.html)
WO (1) WO2011012475A1 (cg-RX-API-DMAC7.html)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5981938B2 (ja) 2010-12-21 2016-08-31 ビーエーエスエフ ソシエタス・ヨーロピアBasf Se レベリング剤を含有する金属電解めっき組成物
KR101952568B1 (ko) 2011-06-01 2019-02-27 바스프 에스이 상호연결 피처 및 실리콘 관통 전극의 보텀-업 충전을 위한 첨가제를 포함하는 금속 전기도금 조성물
EP2530102A1 (en) 2011-06-01 2012-12-05 Basf Se Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias
US20130133243A1 (en) 2011-06-28 2013-05-30 Basf Se Quaternized nitrogen compounds and use thereof as additives in fuels and lubricants
US9758885B2 (en) 2012-11-09 2017-09-12 Basf Se Composition for metal electroplating comprising leveling agent
EP3141633B1 (en) 2015-09-10 2018-05-02 ATOTECH Deutschland GmbH Copper plating bath composition
CN110100048B (zh) * 2016-12-20 2022-06-21 巴斯夫欧洲公司 包含用于无空隙填充的抑制试剂的用于金属电镀的组合物
CN107604414B (zh) * 2017-08-22 2020-03-24 珠海市奥美伦精细化工有限公司 一种铝及铝合金阳极氧化高温无镍封闭剂
CN111051576B (zh) 2017-09-04 2022-08-16 巴斯夫欧洲公司 用于金属电镀的包含流平剂的组合物
JP2021503560A (ja) * 2017-11-20 2021-02-12 ビーエイエスエフ・ソシエタス・エウロパエアBasf Se レベリング剤を含んだコバルト電気メッキ用組成物
ES2881029T3 (es) * 2018-01-09 2021-11-26 Atotech Deutschland Gmbh Aditivo de ureileno, su uso y un método para su preparación
CN114450438A (zh) 2019-09-27 2022-05-06 巴斯夫欧洲公司 用于铜凸块电沉积的包含流平剂的组合物
US20220333262A1 (en) 2019-09-27 2022-10-20 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
CN115335434A (zh) 2020-04-03 2022-11-11 巴斯夫欧洲公司 用于铜凸块电沉积的包含聚氨基酰胺型流平剂的组合物
EP3922662A1 (en) 2020-06-10 2021-12-15 Basf Se Polyalkanolamine
JP7781850B2 (ja) 2020-07-13 2025-12-08 ビーエーエスエフ ソシエタス・ヨーロピア コバルトシード上の銅電気メッキ用組成物
JP2024540824A (ja) 2021-10-01 2024-11-06 ビーエーエスエフ ソシエタス・ヨーロピア ポリアミノアミド型レベリング剤を含む銅電着用組成物
WO2024008562A1 (en) 2022-07-07 2024-01-11 Basf Se Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition
EP4638837A1 (en) 2022-12-19 2025-10-29 Basf Se A composition for copper nanotwin electrodeposition
WO2025026863A1 (en) 2023-08-03 2025-02-06 Basf Se Composition for copper electroplating on a metal seed
JP7787368B1 (ja) * 2024-06-25 2025-12-16 Ykk株式会社 硫酸銅めっき液

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JP2008266722A (ja) * 2007-04-20 2008-11-06 Ebara Udylite Kk パルス銅めっき浴用添加剤およびこれを用いたパルス銅めっき浴
SG177685A1 (en) * 2009-07-30 2012-02-28 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling

Also Published As

Publication number Publication date
CN102471910B (zh) 2016-01-20
RU2539895C2 (ru) 2015-01-27
US20120118750A1 (en) 2012-05-17
IL217234A (en) 2016-05-31
TWI515341B (zh) 2016-01-01
JP2013500395A (ja) 2013-01-07
KR101738708B1 (ko) 2017-05-22
JP5775077B2 (ja) 2015-09-09
RU2012107130A (ru) 2013-09-10
EP2459779A1 (en) 2012-06-06
KR20120049237A (ko) 2012-05-16
EP2459779B1 (en) 2015-09-09
TW201111558A (en) 2011-04-01
IL217234A0 (en) 2012-02-29
US9617647B2 (en) 2017-04-11
SG10201404301WA (en) 2014-09-26
CN102471910A (zh) 2012-05-23
WO2011012475A1 (en) 2011-02-03
JP2016029210A (ja) 2016-03-03
JP6117284B2 (ja) 2017-04-19
SG177418A1 (en) 2012-02-28

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