MY157203A - Aqueous acidic solution and etching solution and method for texturing the surface of single crystal and polycrystal silicon substrates - Google Patents
Aqueous acidic solution and etching solution and method for texturing the surface of single crystal and polycrystal silicon substratesInfo
- Publication number
- MY157203A MY157203A MYPI2013000526A MYPI2013000526A MY157203A MY 157203 A MY157203 A MY 157203A MY PI2013000526 A MYPI2013000526 A MY PI2013000526A MY PI2013000526 A MYPI2013000526 A MY PI2013000526A MY 157203 A MY157203 A MY 157203A
- Authority
- MY
- Malaysia
- Prior art keywords
- aqueous acidic
- solution
- single crystal
- silicon substrates
- polycrystal silicon
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 6
- 238000005530 etching Methods 0.000 title abstract 5
- 239000000243 solution Substances 0.000 title abstract 5
- 238000000034 method Methods 0.000 title abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 3
- 229910052710 silicon Inorganic materials 0.000 title abstract 3
- 239000010703 silicon Substances 0.000 title abstract 3
- 239000003929 acidic solution Substances 0.000 title abstract 2
- 239000013078 crystal Substances 0.000 title 1
- 230000002378 acidificating effect Effects 0.000 abstract 3
- 239000004721 Polyphenylene oxide Substances 0.000 abstract 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N hydrofluoric acid Substances F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910017604 nitric acid Inorganic materials 0.000 abstract 1
- 229920000570 polyether Polymers 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30608—Anisotropic liquid etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Weting (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US37895010P | 2010-09-01 | 2010-09-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
MY157203A true MY157203A (en) | 2016-05-13 |
Family
ID=45772219
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MYPI2013000526A MY157203A (en) | 2010-09-01 | 2011-08-25 | Aqueous acidic solution and etching solution and method for texturing the surface of single crystal and polycrystal silicon substrates |
Country Status (9)
Country | Link |
---|---|
US (1) | US8901000B2 (zh) |
EP (1) | EP2611881A4 (zh) |
JP (1) | JP5941915B2 (zh) |
KR (1) | KR20130114086A (zh) |
CN (1) | CN103080273A (zh) |
MY (1) | MY157203A (zh) |
SG (1) | SG187756A1 (zh) |
TW (1) | TW201213510A (zh) |
WO (1) | WO2012029000A1 (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103430102B (zh) | 2011-03-18 | 2017-02-08 | 巴斯夫欧洲公司 | 制造具有带50nm及更小行间距尺寸的图案化材料层的集成电路装置、光学装置、微型电机和机械精密装置的方法 |
KR20140138581A (ko) * | 2011-08-22 | 2014-12-04 | 1366 테크놀로지 인코포레이티드 | 실리콘 웨이퍼들의 산성 습식 화학 에칭을 위한 제형 |
TW201348406A (zh) * | 2012-05-18 | 2013-12-01 | Air Prod & Chem | 紋理化矽晶圓的組合物及方法 |
CN103681958B (zh) * | 2013-10-16 | 2017-05-17 | 常州时创能源科技有限公司 | 一种多晶硅片制绒方法 |
JP6433674B2 (ja) * | 2014-04-07 | 2018-12-05 | 株式会社トクヤマ | 多結晶シリコンの洗浄方法 |
CN105040108B (zh) * | 2015-08-21 | 2017-11-17 | 浙江启鑫新能源科技股份有限公司 | 多晶硅太阳能电池的制绒方法 |
US10292384B2 (en) * | 2015-12-18 | 2019-05-21 | International Business Machines Corporation | Nanostructures fabricated by metal assisted chemical etching for antibacterial applications |
CN109668532B (zh) * | 2019-01-25 | 2021-04-13 | 北京航天时代激光导航技术有限责任公司 | 一种基片表面检测方法及装置 |
CN109989063B (zh) * | 2019-03-14 | 2020-10-27 | 西安交通大学 | 一种合金表面微织构的制备方法 |
US11518937B2 (en) * | 2019-12-25 | 2022-12-06 | Tokyo Ohka Kogyo Co., Ltd. | Etching solution and method for manufacturing semiconductor element |
CN111092137A (zh) * | 2019-12-26 | 2020-05-01 | 晋能清洁能源科技股份公司 | 一种多晶硅片制绒的制绒液及使用其制绒的方法 |
WO2021176903A1 (ja) * | 2020-03-04 | 2021-09-10 | 富士フイルム株式会社 | 処理液 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS6056289B2 (ja) * | 1976-12-27 | 1985-12-09 | 信越半導体株式会社 | 半導体シリコンの結晶欠陥検出方法および検出液 |
JPH0353083A (ja) * | 1989-07-20 | 1991-03-07 | Morita Kagaku Kogyo Kk | 半導体素子の金属汚染を防止する方法 |
JPH0641770A (ja) * | 1992-07-27 | 1994-02-15 | Daikin Ind Ltd | シリコンウエハ表面の処理方法 |
JP3772456B2 (ja) | 1997-04-23 | 2006-05-10 | 三菱電機株式会社 | 太陽電池及びその製造方法、半導体製造装置 |
EP1389496A1 (en) * | 2001-05-22 | 2004-02-18 | Mitsubishi Chemical Corporation | Method for cleaning surface of substrate |
US6890452B2 (en) * | 2002-11-08 | 2005-05-10 | 3M Innovative Properties Company | Fluorinated surfactants for aqueous acid etch solutions |
DE20321702U1 (de) | 2003-05-07 | 2008-12-24 | Universität Konstanz | Vorrichtung zum Texturieren von Oberflächen von Silizium-Scheiben |
US7091132B2 (en) * | 2003-07-24 | 2006-08-15 | Applied Materials, Inc. | Ultrasonic assisted etch using corrosive liquids |
KR100604853B1 (ko) | 2004-05-15 | 2006-07-26 | 삼성전자주식회사 | 산화막 제거용 식각액 및 그 제조 방법과 반도체 소자의제조 방법 |
EP1628336B1 (en) * | 2004-08-18 | 2012-01-04 | Mitsubishi Gas Chemical Company, Inc. | Cleaning liquid and cleaning method |
JP4628209B2 (ja) * | 2004-11-18 | 2011-02-09 | 花王株式会社 | 剥離剤組成物 |
KR101190907B1 (ko) * | 2004-12-07 | 2012-10-12 | 가오 가부시키가이샤 | 박리제 조성물 |
CN100549840C (zh) * | 2004-12-07 | 2009-10-14 | 花王株式会社 | 剥离剂组合物 |
TWI244135B (en) * | 2004-12-31 | 2005-11-21 | Ind Tech Res Inst | Method of making solar cell |
CN100497764C (zh) | 2006-04-25 | 2009-06-10 | 重庆大学 | n型单晶硅片的表面处理方法 |
KR100928302B1 (ko) | 2007-07-13 | 2009-11-25 | 주식회사 케이피이 | 계면 활성제 및 산 용액 습식식각 방법을 이용한 삼결정실리콘의 태양전지 제조방법 |
US8119438B2 (en) * | 2007-10-24 | 2012-02-21 | Mitsubishi Electric Corporation | Method of manufacturing solar cell |
TW201001508A (en) | 2008-03-25 | 2010-01-01 | Applied Materials Inc | Surface cleaning and texturing process for crystalline solar cells |
KR101168589B1 (ko) | 2008-03-26 | 2012-07-30 | 엘지전자 주식회사 | 계면 활성제를 이용한 실리콘 태양전지의 텍스처링 방법 |
TW201027766A (en) | 2008-08-27 | 2010-07-16 | Applied Materials Inc | Back contact solar cells using printed dielectric barrier |
US20100304527A1 (en) | 2009-03-03 | 2010-12-02 | Peter Borden | Methods of thermal processing a solar cell |
US8940178B2 (en) * | 2009-03-18 | 2015-01-27 | E I Du Pont De Nemours And Company | Textured silicon substrate and method |
US7989346B2 (en) * | 2009-07-27 | 2011-08-02 | Adam Letize | Surface treatment of silicon |
-
2011
- 2011-08-25 EP EP11821199.4A patent/EP2611881A4/en not_active Withdrawn
- 2011-08-25 JP JP2013526574A patent/JP5941915B2/ja not_active Expired - Fee Related
- 2011-08-25 CN CN2011800422949A patent/CN103080273A/zh active Pending
- 2011-08-25 US US13/817,935 patent/US8901000B2/en not_active Expired - Fee Related
- 2011-08-25 KR KR1020137005359A patent/KR20130114086A/ko not_active Application Discontinuation
- 2011-08-25 SG SG2013009360A patent/SG187756A1/en unknown
- 2011-08-25 WO PCT/IB2011/053728 patent/WO2012029000A1/en active Application Filing
- 2011-08-25 MY MYPI2013000526A patent/MY157203A/en unknown
- 2011-09-01 TW TW100131552A patent/TW201213510A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
EP2611881A1 (en) | 2013-07-10 |
JP5941915B2 (ja) | 2016-06-29 |
WO2012029000A1 (en) | 2012-03-08 |
CN103080273A (zh) | 2013-05-01 |
US8901000B2 (en) | 2014-12-02 |
EP2611881A4 (en) | 2017-08-30 |
US20130171765A1 (en) | 2013-07-04 |
SG187756A1 (en) | 2013-03-28 |
JP2013538007A (ja) | 2013-10-07 |
TW201213510A (en) | 2012-04-01 |
KR20130114086A (ko) | 2013-10-16 |
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