MXPA06013788A - Metodo y sistema para proporcionar renovacion propia sin uniones para renovacion directa de banco en memorias volatiles. - Google Patents
Metodo y sistema para proporcionar renovacion propia sin uniones para renovacion directa de banco en memorias volatiles.Info
- Publication number
- MXPA06013788A MXPA06013788A MXPA06013788A MXPA06013788A MXPA06013788A MX PA06013788 A MXPA06013788 A MX PA06013788A MX PA06013788 A MXPA06013788 A MX PA06013788A MX PA06013788 A MXPA06013788 A MX PA06013788A MX PA06013788 A MXPA06013788 A MX PA06013788A
- Authority
- MX
- Mexico
- Prior art keywords
- bank
- volatile memory
- renewal
- address
- self
- Prior art date
Links
- 230000015654 memory Effects 0.000 title claims abstract description 421
- 238000000034 method Methods 0.000 title claims description 58
- 238000009418 renovation Methods 0.000 claims description 22
- 230000001360 synchronised effect Effects 0.000 claims description 8
- 239000012190 activator Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 7
- 230000006870 function Effects 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000036316 preload Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000003039 volatile agent Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40611—External triggering or timing of internal or partially internal refresh operations, e.g. auto-refresh or CAS-before-RAS triggered refresh
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40618—Refresh operations over multiple banks or interleaving
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4082—Address Buffers; level conversion circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US57533504P | 2004-05-27 | 2004-05-27 | |
| US10/982,277 US7088633B2 (en) | 2004-05-27 | 2004-11-05 | Method and system for providing seamless self-refresh for directed bank refresh in volatile memories |
| PCT/US2005/018917 WO2005119692A1 (en) | 2004-05-27 | 2005-05-26 | Method and system for providing seamless self-refresh for directed bank refresh in volatile memories |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MXPA06013788A true MXPA06013788A (es) | 2007-03-01 |
Family
ID=34972468
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MXPA06013788A MXPA06013788A (es) | 2004-05-27 | 2005-05-26 | Metodo y sistema para proporcionar renovacion propia sin uniones para renovacion directa de banco en memorias volatiles. |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US7088633B2 (enExample) |
| EP (1) | EP1751769B1 (enExample) |
| JP (2) | JP2008500680A (enExample) |
| KR (1) | KR100843529B1 (enExample) |
| CN (1) | CN1977340B (enExample) |
| AT (1) | ATE534998T1 (enExample) |
| IL (1) | IL179460A0 (enExample) |
| MX (1) | MXPA06013788A (enExample) |
| WO (1) | WO2005119692A1 (enExample) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7079440B2 (en) * | 2004-05-27 | 2006-07-18 | Qualcomm Incorporated | Method and system for providing directed bank refresh for volatile memories |
| US7184350B2 (en) * | 2004-05-27 | 2007-02-27 | Qualcomm Incorporated | Method and system for providing independent bank refresh for volatile memories |
| US7953921B2 (en) | 2004-12-28 | 2011-05-31 | Qualcomm Incorporated | Directed auto-refresh synchronization |
| KR100665901B1 (ko) * | 2005-03-31 | 2007-01-11 | 주식회사 하이닉스반도체 | 반도체 기억 소자의 개별 뱅크 리프레쉬 회로 및 방법 |
| KR100838375B1 (ko) * | 2006-04-28 | 2008-06-13 | 주식회사 하이닉스반도체 | 반도체 메모리 장치 |
| JP4813264B2 (ja) * | 2006-06-14 | 2011-11-09 | 株式会社日立製作所 | ストレージシステム |
| KR100748460B1 (ko) * | 2006-08-16 | 2007-08-13 | 주식회사 하이닉스반도체 | 반도체 메모리 및 그 제어방법 |
| KR100802074B1 (ko) | 2006-09-08 | 2008-02-12 | 주식회사 하이닉스반도체 | 리프레쉬명령 생성회로를 포함하는 메모리장치 및리프레쉬명령 생성방법. |
| US7922509B2 (en) * | 2007-06-15 | 2011-04-12 | Tyco Electronics Corporation | Surface mount electrical connector having insulated pin |
| US7590021B2 (en) * | 2007-07-26 | 2009-09-15 | Qualcomm Incorporated | System and method to reduce dynamic RAM power consumption via the use of valid data indicators |
| US7990795B2 (en) | 2009-02-19 | 2011-08-02 | Freescale Semiconductor, Inc. | Dynamic random access memory (DRAM) refresh |
| WO2010123681A2 (en) | 2009-04-22 | 2010-10-28 | Rambus Inc. | Protocol for refresh between a memory controller and a memory device |
| US8310893B2 (en) * | 2009-12-16 | 2012-11-13 | Micron Technology, Inc. | Techniques for reducing impact of array disturbs in a semiconductor memory device |
| US9053812B2 (en) | 2010-09-24 | 2015-06-09 | Intel Corporation | Fast exit from DRAM self-refresh |
| US9292426B2 (en) * | 2010-09-24 | 2016-03-22 | Intel Corporation | Fast exit from DRAM self-refresh |
| KR101796116B1 (ko) | 2010-10-20 | 2017-11-10 | 삼성전자 주식회사 | 반도체 장치, 이를 포함하는 메모리 모듈, 메모리 시스템 및 그 동작방법 |
| KR20150015560A (ko) * | 2013-07-30 | 2015-02-11 | 에스케이하이닉스 주식회사 | 반도체장치를 포함하는 반도체시스템 |
| JP2015076110A (ja) * | 2013-10-08 | 2015-04-20 | マイクロン テクノロジー， インク． | 半導体装置及びこれを備えるデータ処理システム |
| KR102163983B1 (ko) * | 2013-11-07 | 2020-10-12 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 |
| KR20160023274A (ko) * | 2014-08-22 | 2016-03-03 | 에스케이하이닉스 주식회사 | 메모리 장치 및 이를 포함하는 메모리 시스템 |
| US10331526B2 (en) * | 2015-07-31 | 2019-06-25 | Qualcomm Incorporated | Systems, methods, and apparatus for frequency reset of a memory |
| US9875785B2 (en) | 2015-10-01 | 2018-01-23 | Qualcomm Incorporated | Refresh timer synchronization between memory controller and memory |
| US11079945B2 (en) * | 2018-09-20 | 2021-08-03 | Ati Technologies Ulc | Dynamic configuration of memory timing parameters |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4687107A (en) * | 1985-05-02 | 1987-08-18 | Pennwalt Corporation | Apparatus for sizing and sorting articles |
| JPH1166843A (ja) * | 1997-08-08 | 1999-03-09 | Mitsubishi Electric Corp | 半導体記憶装置 |
| WO1999046775A2 (en) | 1998-03-10 | 1999-09-16 | Rambus, Inc. | Performing concurrent refresh and current control operations in a memory subsystem |
| JP2001332083A (ja) * | 2000-05-18 | 2001-11-30 | Nec Corp | 半導体記憶装置およびそのアドレス制御方法 |
| US6665224B1 (en) | 2002-05-22 | 2003-12-16 | Infineon Technologies Ag | Partial refresh for synchronous dynamic random access memory (SDRAM) circuits |
| US7236416B2 (en) * | 2004-05-21 | 2007-06-26 | Qualcomm Incorporated | Method and system for controlling refresh in volatile memories |
| US7184350B2 (en) * | 2004-05-27 | 2007-02-27 | Qualcomm Incorporated | Method and system for providing independent bank refresh for volatile memories |
| US7079440B2 (en) * | 2004-05-27 | 2006-07-18 | Qualcomm Incorporated | Method and system for providing directed bank refresh for volatile memories |
-
2004
- 2004-11-05 US US10/982,277 patent/US7088633B2/en not_active Expired - Lifetime
-
2005
- 2005-05-26 AT AT05760239T patent/ATE534998T1/de active
- 2005-05-26 CN CN2005800219268A patent/CN1977340B/zh not_active Expired - Lifetime
- 2005-05-26 WO PCT/US2005/018917 patent/WO2005119692A1/en not_active Ceased
- 2005-05-26 MX MXPA06013788A patent/MXPA06013788A/es active IP Right Grant
- 2005-05-26 EP EP05760239A patent/EP1751769B1/en not_active Expired - Lifetime
- 2005-05-26 JP JP2007515446A patent/JP2008500680A/ja active Pending
- 2005-05-26 KR KR1020067027451A patent/KR100843529B1/ko not_active Expired - Lifetime
-
2006
- 2006-11-21 IL IL179460A patent/IL179460A0/en not_active IP Right Cessation
-
2011
- 2011-08-12 JP JP2011176808A patent/JP2012014824A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP1751769A1 (en) | 2007-02-14 |
| JP2008500680A (ja) | 2008-01-10 |
| KR100843529B1 (ko) | 2008-07-03 |
| EP1751769B1 (en) | 2011-11-23 |
| JP2012014824A (ja) | 2012-01-19 |
| WO2005119692A1 (en) | 2005-12-15 |
| US7088633B2 (en) | 2006-08-08 |
| CN1977340B (zh) | 2012-05-09 |
| IL179460A0 (en) | 2007-05-15 |
| CN1977340A (zh) | 2007-06-06 |
| US20050265103A1 (en) | 2005-12-01 |
| ATE534998T1 (de) | 2011-12-15 |
| KR20070027630A (ko) | 2007-03-09 |
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| US20050259493A1 (en) | Method and system for controlling refresh in volatile memories | |
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| HK1110987B (en) | Method and system for minimizing impact of refresh operations on volatile memory performance | |
| HK1101934A (en) | Method and system for providing independent bank refresh for volatile memories | |
| HK1179046B (en) | Method and system for minimizing impact of refresh operations on volatile memory performance | |
| CN1977338A (zh) | 为易失性存储器提供独立的库刷新的方法和系统 | |
| HK1101448A (en) | Method and system for providing seamless self-refresh for directed bank refresh in volatile memories |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FG | Grant or registration |