CN1977340B - 为易失性存储器中的引导式库刷新提供无缝自刷新的方法和系统 - Google Patents

为易失性存储器中的引导式库刷新提供无缝自刷新的方法和系统 Download PDF

Info

Publication number
CN1977340B
CN1977340B CN2005800219268A CN200580021926A CN1977340B CN 1977340 B CN1977340 B CN 1977340B CN 2005800219268 A CN2005800219268 A CN 2005800219268A CN 200580021926 A CN200580021926 A CN 200580021926A CN 1977340 B CN1977340 B CN 1977340B
Authority
CN
China
Prior art keywords
volatile memory
refresh
bank
self
row
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN2005800219268A
Other languages
English (en)
Chinese (zh)
Other versions
CN1977340A (zh
Inventor
佩里·威尔曼·小雷马克吕思
罗伯特·迈克尔·沃克
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm Inc
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of CN1977340A publication Critical patent/CN1977340A/zh
Application granted granted Critical
Publication of CN1977340B publication Critical patent/CN1977340B/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40611—External triggering or timing of internal or partially internal refresh operations, e.g. auto-refresh or CAS-before-RAS triggered refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40618—Refresh operations over multiple banks or interleaving
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4082—Address Buffers; level conversion circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
CN2005800219268A 2004-05-27 2005-05-26 为易失性存储器中的引导式库刷新提供无缝自刷新的方法和系统 Expired - Lifetime CN1977340B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US57533504P 2004-05-27 2004-05-27
US60/575,335 2004-05-27
US10/982,277 US7088633B2 (en) 2004-05-27 2004-11-05 Method and system for providing seamless self-refresh for directed bank refresh in volatile memories
US10/982,277 2004-11-05
PCT/US2005/018917 WO2005119692A1 (en) 2004-05-27 2005-05-26 Method and system for providing seamless self-refresh for directed bank refresh in volatile memories

Publications (2)

Publication Number Publication Date
CN1977340A CN1977340A (zh) 2007-06-06
CN1977340B true CN1977340B (zh) 2012-05-09

Family

ID=34972468

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2005800219268A Expired - Lifetime CN1977340B (zh) 2004-05-27 2005-05-26 为易失性存储器中的引导式库刷新提供无缝自刷新的方法和系统

Country Status (9)

Country Link
US (1) US7088633B2 (enExample)
EP (1) EP1751769B1 (enExample)
JP (2) JP2008500680A (enExample)
KR (1) KR100843529B1 (enExample)
CN (1) CN1977340B (enExample)
AT (1) ATE534998T1 (enExample)
IL (1) IL179460A0 (enExample)
MX (1) MXPA06013788A (enExample)
WO (1) WO2005119692A1 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7079440B2 (en) * 2004-05-27 2006-07-18 Qualcomm Incorporated Method and system for providing directed bank refresh for volatile memories
US7184350B2 (en) * 2004-05-27 2007-02-27 Qualcomm Incorporated Method and system for providing independent bank refresh for volatile memories
US7953921B2 (en) 2004-12-28 2011-05-31 Qualcomm Incorporated Directed auto-refresh synchronization
KR100665901B1 (ko) * 2005-03-31 2007-01-11 주식회사 하이닉스반도체 반도체 기억 소자의 개별 뱅크 리프레쉬 회로 및 방법
KR100838375B1 (ko) * 2006-04-28 2008-06-13 주식회사 하이닉스반도체 반도체 메모리 장치
JP4813264B2 (ja) * 2006-06-14 2011-11-09 株式会社日立製作所 ストレージシステム
KR100748460B1 (ko) * 2006-08-16 2007-08-13 주식회사 하이닉스반도체 반도체 메모리 및 그 제어방법
KR100802074B1 (ko) 2006-09-08 2008-02-12 주식회사 하이닉스반도체 리프레쉬명령 생성회로를 포함하는 메모리장치 및리프레쉬명령 생성방법.
US7922509B2 (en) * 2007-06-15 2011-04-12 Tyco Electronics Corporation Surface mount electrical connector having insulated pin
US7590021B2 (en) * 2007-07-26 2009-09-15 Qualcomm Incorporated System and method to reduce dynamic RAM power consumption via the use of valid data indicators
US7990795B2 (en) 2009-02-19 2011-08-02 Freescale Semiconductor, Inc. Dynamic random access memory (DRAM) refresh
WO2010123681A2 (en) 2009-04-22 2010-10-28 Rambus Inc. Protocol for refresh between a memory controller and a memory device
US8310893B2 (en) * 2009-12-16 2012-11-13 Micron Technology, Inc. Techniques for reducing impact of array disturbs in a semiconductor memory device
US9053812B2 (en) 2010-09-24 2015-06-09 Intel Corporation Fast exit from DRAM self-refresh
US9292426B2 (en) * 2010-09-24 2016-03-22 Intel Corporation Fast exit from DRAM self-refresh
KR101796116B1 (ko) 2010-10-20 2017-11-10 삼성전자 주식회사 반도체 장치, 이를 포함하는 메모리 모듈, 메모리 시스템 및 그 동작방법
KR20150015560A (ko) * 2013-07-30 2015-02-11 에스케이하이닉스 주식회사 반도체장치를 포함하는 반도체시스템
JP2015076110A (ja) * 2013-10-08 2015-04-20 マイクロン テクノロジー， インク． 半導体装置及びこれを備えるデータ処理システム
KR102163983B1 (ko) * 2013-11-07 2020-10-12 에스케이하이닉스 주식회사 반도체 메모리 장치
KR20160023274A (ko) * 2014-08-22 2016-03-03 에스케이하이닉스 주식회사 메모리 장치 및 이를 포함하는 메모리 시스템
US10331526B2 (en) * 2015-07-31 2019-06-25 Qualcomm Incorporated Systems, methods, and apparatus for frequency reset of a memory
US9875785B2 (en) 2015-10-01 2018-01-23 Qualcomm Incorporated Refresh timer synchronization between memory controller and memory
US11079945B2 (en) * 2018-09-20 2021-08-03 Ati Technologies Ulc Dynamic configuration of memory timing parameters

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5999472A (en) * 1997-08-08 1999-12-07 Mitsubishi Denki Kabushiki Kaisha Multi-bank synchronous semiconductor memory device with easy control

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4687107A (en) * 1985-05-02 1987-08-18 Pennwalt Corporation Apparatus for sizing and sorting articles
WO1999046775A2 (en) 1998-03-10 1999-09-16 Rambus, Inc. Performing concurrent refresh and current control operations in a memory subsystem
JP2001332083A (ja) * 2000-05-18 2001-11-30 Nec Corp 半導体記憶装置およびそのアドレス制御方法
US6665224B1 (en) 2002-05-22 2003-12-16 Infineon Technologies Ag Partial refresh for synchronous dynamic random access memory (SDRAM) circuits
US7236416B2 (en) * 2004-05-21 2007-06-26 Qualcomm Incorporated Method and system for controlling refresh in volatile memories
US7184350B2 (en) * 2004-05-27 2007-02-27 Qualcomm Incorporated Method and system for providing independent bank refresh for volatile memories
US7079440B2 (en) * 2004-05-27 2006-07-18 Qualcomm Incorporated Method and system for providing directed bank refresh for volatile memories

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5999472A (en) * 1997-08-08 1999-12-07 Mitsubishi Denki Kabushiki Kaisha Multi-bank synchronous semiconductor memory device with easy control

Also Published As

Publication number Publication date
EP1751769A1 (en) 2007-02-14
JP2008500680A (ja) 2008-01-10
KR100843529B1 (ko) 2008-07-03
EP1751769B1 (en) 2011-11-23
JP2012014824A (ja) 2012-01-19
WO2005119692A1 (en) 2005-12-15
MXPA06013788A (es) 2007-03-01
US7088633B2 (en) 2006-08-08
IL179460A0 (en) 2007-05-15
CN1977340A (zh) 2007-06-06
US20050265103A1 (en) 2005-12-01
ATE534998T1 (de) 2011-12-15
KR20070027630A (ko) 2007-03-09

Similar Documents

Publication Publication Date Title
CN1977340B (zh) 为易失性存储器中的引导式库刷新提供无缝自刷新的方法和系统
US7583552B2 (en) Method and system for providing independent bank refresh for volatile memories
US7586805B2 (en) Method and system for providing directed bank refresh for volatile memories
CN102737706B (zh) 控制易失性存储器中的刷新的方法和系统
CN100585732C (zh) 用于为易失性存储器提供定向库刷新的方法及系统
CN1973333A (zh) 控制易失性存储器中的刷新的方法和系统
HK1101448A (en) Method and system for providing seamless self-refresh for directed bank refresh in volatile memories
CN1977338A (zh) 为易失性存储器提供独立的库刷新的方法和系统
HK1101447A (en) Method and system for controlling refresh in volatile memories
HK1101935A (en) Method and system for providing directed bank refresh for volatile memories

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
REG Reference to a national code

Ref country code: HK

Ref legal event code: DE

Ref document number: 1101448

Country of ref document: HK

C12 Rejection of a patent application after its publication
RJ01 Rejection of invention patent application after publication

Open date: 20070606

C14 Grant of patent or utility model
GR01 Patent grant
REG Reference to a national code

Ref country code: HK

Ref legal event code: WD

Ref document number: 1101448

Country of ref document: HK

CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20120509