MXPA03002989A - Circuito de proteccion de descarga electrostatica. - Google Patents
Circuito de proteccion de descarga electrostatica.Info
- Publication number
- MXPA03002989A MXPA03002989A MXPA03002989A MXPA03002989A MXPA03002989A MX PA03002989 A MXPA03002989 A MX PA03002989A MX PA03002989 A MXPA03002989 A MX PA03002989A MX PA03002989 A MXPA03002989 A MX PA03002989A MX PA03002989 A MXPA03002989 A MX PA03002989A
- Authority
- MX
- Mexico
- Prior art keywords
- transistor
- switch
- electro
- static discharge
- time constant
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H3/00—Production or acceleration of neutral particle beams, e.g. molecular or atomic beams
- H05H3/02—Molecular or atomic beam generation
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
- H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Plasma & Fusion (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Abstract
Una disposicion para proteger un elemento de una descarga electrostatica; se provee un interruptor para inhibir el flujo de energia a traves del elemento en respuesta a la senal de control; en la modalidad ilustrativa, el interruptor es un interruptor de transistor; se coloca un resistor entre una terminal de entrada del transistor y el suministro positivo para mantener el transistor activo durante la operacion normal; se coloca un capacitor entre la terminal de entrada del transistor y la toma de tierra para evitar que el voltaje de entrada del transistor cambie rapido; la constante de tiempo RC se elige para que sea mucho mayor que la constante de tiempo del pulso ESD; por consecuencia, el voltaje de entrada del transistor permanecera sin modificacion alguna cerca de V y el transistor permanecera inactivo durante el evento ESD, evitando que el elemento dirija la corriente de descarga y proporcionando proteccion ESD.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/684,350 US6624992B1 (en) | 2000-10-06 | 2000-10-06 | Electro-static discharge protection circuit |
PCT/US2001/042574 WO2002029950A2 (en) | 2000-10-06 | 2001-10-06 | Electro-static discharge protection circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
MXPA03002989A true MXPA03002989A (es) | 2004-05-05 |
Family
ID=24747687
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MXPA03002989A MXPA03002989A (es) | 2000-10-06 | 2001-10-06 | Circuito de proteccion de descarga electrostatica. |
Country Status (6)
Country | Link |
---|---|
US (1) | US6624992B1 (es) |
EP (1) | EP1323221A2 (es) |
KR (1) | KR100854008B1 (es) |
AU (1) | AU2002211878A1 (es) |
MX (1) | MXPA03002989A (es) |
WO (1) | WO2002029950A2 (es) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7187530B2 (en) * | 2002-12-27 | 2007-03-06 | T-Ram Semiconductor, Inc. | Electrostatic discharge protection circuit |
DE10349405A1 (de) * | 2003-10-21 | 2005-05-25 | Austriamicrosystems Ag | Aktive Schutzschaltungsanordnung |
US7271989B2 (en) * | 2004-06-03 | 2007-09-18 | Altera Corporation | Electrostatic discharge protection circuit |
JP4986459B2 (ja) | 2006-01-24 | 2012-07-25 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置 |
US7397641B2 (en) * | 2006-02-28 | 2008-07-08 | International Business Machines Corporation | Apparatus and method for improved triggering and oscillation suppression of ESD clamping devices |
JP4690915B2 (ja) | 2006-03-10 | 2011-06-01 | 日立オートモティブシステムズ株式会社 | 集積回路用電源保護回路 |
KR100808604B1 (ko) * | 2006-04-18 | 2008-02-29 | 주식회사 하이닉스반도체 | 반도체 장치용 정전기 보호 장치 |
US7724485B2 (en) * | 2006-08-24 | 2010-05-25 | Qualcomm Incorporated | N-channel ESD clamp with improved performance |
US20080137251A1 (en) * | 2006-12-12 | 2008-06-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Repair circuitry with an enhanced ESD protection device |
KR101016957B1 (ko) * | 2007-02-15 | 2011-02-28 | 주식회사 하이닉스반도체 | 반도체 장치용 정전기 보호 장치 |
WO2009103315A1 (en) * | 2008-02-20 | 2009-08-27 | Verigy (Singapore) Pte. Ltd. | System, method and computer program for detecting an electrostatic discharge event |
US7978450B1 (en) | 2008-03-20 | 2011-07-12 | Altera Corporation | Electrostatic discharge protection circuitry |
US8705217B2 (en) * | 2008-12-24 | 2014-04-22 | Stmicroelectronics Asia Pacific Pte Ltd | Electrostatic discharge protection circuit |
CN101938118B (zh) * | 2009-06-29 | 2013-09-04 | 智原科技股份有限公司 | 具有多重电源区域集成电路的静电放电防护电路 |
EP2293331A1 (en) * | 2009-08-27 | 2011-03-09 | Imec | Method for designing integrated electronic circuits having ESD protection and circuits obtained thereof |
US8339757B2 (en) * | 2010-04-19 | 2012-12-25 | Faraday Technology Corp. | Electrostatic discharge circuit for integrated circuit with multiple power domain |
US9501714B2 (en) | 2010-10-29 | 2016-11-22 | Qualcomm Incorporated | Systems and methods to improve feature generation in object recognition |
US8576523B2 (en) * | 2011-03-14 | 2013-11-05 | Qualcomm Incorporated | Charge pump electrostatic discharge protection |
US9614368B2 (en) * | 2015-02-10 | 2017-04-04 | Texas Instruments Incorporated | Area-efficient active-FET ESD protection circuit |
US10298010B2 (en) * | 2016-03-31 | 2019-05-21 | Qualcomm Incorporated | Electrostatic discharge (ESD) isolated input/output (I/O) circuits |
US10396550B2 (en) * | 2016-09-30 | 2019-08-27 | Texas Instruments Incorporated | ESD protection charge pump active clamp for low-leakage applications |
US10749336B2 (en) | 2016-11-28 | 2020-08-18 | Texas Instruments Incorporated | ESD protection circuit with passive trigger voltage controlled shut-off |
JP2022081067A (ja) * | 2020-11-19 | 2022-05-31 | 住友電気工業株式会社 | 静電気保護回路および半導体集積回路 |
JP2022081070A (ja) | 2020-11-19 | 2022-05-31 | 住友電気工業株式会社 | 静電気保護回路および半導体集積回路 |
CN116802587A (zh) * | 2021-01-22 | 2023-09-22 | 华为技术有限公司 | 一种电子器件、光电接收机、光模块及网络设备 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5714216A (en) * | 1980-06-30 | 1982-01-25 | Mitsubishi Electric Corp | Input protecting circuit |
CA1314946C (en) | 1989-02-01 | 1993-03-23 | Colin Harris | Protection of analog reference and bias voltage inputs |
US5255146A (en) * | 1991-08-29 | 1993-10-19 | National Semiconductor Corporation | Electrostatic discharge detection and clamp control circuit |
US5745323A (en) * | 1995-06-30 | 1998-04-28 | Analog Devices, Inc. | Electrostatic discharge protection circuit for protecting CMOS transistors on integrated circuit processes |
KR100206870B1 (ko) | 1995-11-28 | 1999-07-01 | 구본준 | 정전 방전 및 래치 업 방지회로 |
US6091593A (en) * | 1997-10-22 | 2000-07-18 | Winbond Electronics Corp. | Early trigger of ESD protection device by a negative voltage pump circuit |
TW359887B (en) * | 1997-11-28 | 1999-06-01 | Winbond Electronics Corp | IC interline protective circuit |
US5946177A (en) * | 1998-08-17 | 1999-08-31 | Motorola, Inc. | Circuit for electrostatic discharge protection |
-
2000
- 2000-10-06 US US09/684,350 patent/US6624992B1/en not_active Expired - Lifetime
-
2001
- 2001-10-06 WO PCT/US2001/042574 patent/WO2002029950A2/en active Application Filing
- 2001-10-06 MX MXPA03002989A patent/MXPA03002989A/es active IP Right Grant
- 2001-10-06 KR KR1020037004855A patent/KR100854008B1/ko not_active IP Right Cessation
- 2001-10-06 EP EP01979970A patent/EP1323221A2/en not_active Withdrawn
- 2001-10-06 AU AU2002211878A patent/AU2002211878A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
KR20030038797A (ko) | 2003-05-16 |
KR100854008B1 (ko) | 2008-08-26 |
AU2002211878A1 (en) | 2002-04-15 |
WO2002029950A3 (en) | 2002-06-27 |
US6624992B1 (en) | 2003-09-23 |
EP1323221A2 (en) | 2003-07-02 |
WO2002029950A2 (en) | 2002-04-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG | Grant or registration |