MX9204763A - Sistema de procesamiento libre de ambiente. - Google Patents

Sistema de procesamiento libre de ambiente.

Info

Publication number
MX9204763A
MX9204763A MX9204763A MX9204763A MX9204763A MX 9204763 A MX9204763 A MX 9204763A MX 9204763 A MX9204763 A MX 9204763A MX 9204763 A MX9204763 A MX 9204763A MX 9204763 A MX9204763 A MX 9204763A
Authority
MX
Mexico
Prior art keywords
processing system
free processing
environment free
environment
workpiece
Prior art date
Application number
MX9204763A
Other languages
English (en)
Inventor
Dennis Francis Brestovansky
Mark Stephen Nowotarski
Walter Plante
Original Assignee
Praxair Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Praxair Technology Inc filed Critical Praxair Technology Inc
Publication of MX9204763A publication Critical patent/MX9204763A/es

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
    • H01L21/67781—Batch transfer of wafers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Jigs For Machine Tools (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Furnace Details (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

Un aparato y un método para procesar una pieza de trabajo en una atmósfera de un gas seleccionado, libre de ambiente.
MX9204763A 1991-08-19 1992-08-18 Sistema de procesamiento libre de ambiente. MX9204763A (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/746,755 US5210959A (en) 1991-08-19 1991-08-19 Ambient-free processing system

Publications (1)

Publication Number Publication Date
MX9204763A true MX9204763A (es) 1994-02-28

Family

ID=25002201

Family Applications (1)

Application Number Title Priority Date Filing Date
MX9204763A MX9204763A (es) 1991-08-19 1992-08-18 Sistema de procesamiento libre de ambiente.

Country Status (9)

Country Link
US (1) US5210959A (es)
EP (1) EP0528405B1 (es)
JP (1) JP2681576B2 (es)
KR (1) KR0139620B1 (es)
BR (1) BR9203193A (es)
CA (1) CA2076334C (es)
DE (1) DE69224942T2 (es)
ES (1) ES2113902T3 (es)
MX (1) MX9204763A (es)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5366409A (en) * 1993-11-22 1994-11-22 Praxair Technology, Inc. Controlling pouring stream and receiver environment
JPH07225079A (ja) * 1994-02-10 1995-08-22 Sony Corp 加熱方法及び半導体装置の製造方法
US5644855A (en) * 1995-04-06 1997-07-08 Air Products And Chemicals, Inc. Cryogenically purged mini environment
US6041515A (en) * 1998-01-12 2000-03-28 Life Technologies, Inc. Apparatus for drying solutions containing macromolecules
EP1114799A1 (en) * 2000-01-05 2001-07-11 Lucent Technologies Inc. Process for heat treatment of a shaped article with gaseous reactants
CA2543467A1 (en) * 2003-10-23 2005-05-12 Martin Terence Cole Improvement(s) related to particle monitors and method(s) therefor
JP4568108B2 (ja) * 2004-12-24 2010-10-27 パナソニック株式会社 真空薄膜装置
US7184657B1 (en) * 2005-09-17 2007-02-27 Mattson Technology, Inc. Enhanced rapid thermal processing apparatus and method
JP4527670B2 (ja) * 2006-01-25 2010-08-18 東京エレクトロン株式会社 加熱処理装置、加熱処理方法、制御プログラムおよびコンピュータ読取可能な記憶媒体
US7877895B2 (en) * 2006-06-26 2011-02-01 Tokyo Electron Limited Substrate processing apparatus
JP4153540B2 (ja) * 2006-09-12 2008-09-24 シャープ株式会社 基板製造装置
ES2345121T3 (es) 2007-02-02 2010-09-15 Applied Materials, Inc. Camara de proceso, instalacion de recubrimiento en linea y procedimiento para tratar un sustrato.
US7966743B2 (en) * 2007-07-31 2011-06-28 Eastman Kodak Company Micro-structured drying for inkjet printers
KR20170008270A (ko) * 2014-05-15 2017-01-23 어플라이드 머티어리얼스, 인코포레이티드 입자 제거 디바이스 및 이의 작동 방법
US11302526B2 (en) * 2019-01-14 2022-04-12 Samsung Electronics Co., Ltd. Supercritical drying apparatus and method of drying substrate using the same
CN211479989U (zh) * 2019-03-15 2020-09-11 凯斯科技股份有限公司 基板处理装置
CN112885768B (zh) * 2020-12-30 2023-10-13 华灿光电（浙江）有限公司 刻蚀烘烤设备的外延片载具

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4376225A (en) * 1981-08-05 1983-03-08 Uop Inc. Dehydrogenation process utilizing indirect heat exchange and direct combustion heating
US4436509A (en) * 1982-05-10 1984-03-13 Rca Corporation Controlled environment for diffusion furnace
US4526534A (en) * 1983-06-01 1985-07-02 Quartz Engineering & Materials, Inc. Cantilever diffusion tube apparatus and method
US4696226A (en) * 1986-08-28 1987-09-29 Witmer Warner H Fluid barrier curtain system
IT1205512B (it) * 1986-12-30 1989-03-23 Mauro Poppi Forno per la cottura di materiali ceramici quali piastrelle e simili
DE3707672A1 (de) * 1987-03-10 1988-09-22 Sitesa Sa Epitaxieanlage
US4943235A (en) * 1987-11-27 1990-07-24 Tel Sagami Limited Heat-treating apparatus
US4823680A (en) * 1987-12-07 1989-04-25 Union Carbide Corporation Wide laminar fluid doors
US4955808A (en) * 1988-03-09 1990-09-11 Tel Sagami Limited Method of heat-processing objects and device and boat for the same
US4911638A (en) * 1989-05-18 1990-03-27 Direction Incorporated Controlled diffusion environment capsule and system
US4950156A (en) * 1989-06-28 1990-08-21 Digital Equipment Corporation Inert gas curtain for a thermal processing furnace

Also Published As

Publication number Publication date
KR0139620B1 (ko) 1998-07-15
EP0528405B1 (en) 1998-04-01
US5210959A (en) 1993-05-18
CA2076334A1 (en) 1993-02-20
JPH05286800A (ja) 1993-11-02
ES2113902T3 (es) 1998-05-16
EP0528405A3 (en) 1995-12-27
CA2076334C (en) 1997-03-04
BR9203193A (pt) 1993-03-30
JP2681576B2 (ja) 1997-11-26
DE69224942T2 (de) 1998-09-10
DE69224942D1 (de) 1998-05-07
EP0528405A2 (en) 1993-02-24

Similar Documents

Publication Publication Date Title
MX9204763A (es) Sistema de procesamiento libre de ambiente.
ES2110950T3 (es) Aparato y metodo para proceso de imagenes.
EP0604002A3 (en) Method and apparatus for resolving data references in generated code.
EP0616296A3 (en) Document processing method and apparatus.
DE69024045D1 (de) Kodierungsverfahren und Vorrichtung zur Pipeline- und Parallelverarbeitung.
FI943409A0 (fi) Menetelmä ja laite vedenalaisen paalun käsittelemiseksi, korjaamiseksi ja koteloimiseksi
EP0650130A3 (en) Method and device for specifying the layout of structured documents.
GB2288677B (en) Pipeline processing device, clipping processing device, three-dimensional simulator device and pipeline processing method
ES2143500T3 (es) Metodo y aparato para comunicar señales.
DE69637025D1 (de) Informationsverarbeitungsverfahren und -vorrichtung zum Suchen von Bild- oder Textinformation
DE3483726D1 (de) Einrichtung und verfahren zur textverarbeitung.
EP0620060A3 (en) Method and apparatus for positioning tools.
DE69112272D1 (de) Verfahren und Gerät zur Laserbearbeitung.
MX9204197A (es) Metodo y aparato para doblar hojas de vidrio.
BR9203584A (pt) Metodo e aparelho para comunicacao entre processos num sistema de computador
EP0633469A3 (en) Process, device and applications of fast gas chromatography.
DE69532087D1 (de) Föderanlage zum postiven erzeugen von zwischenräumen
EP0684470A3 (en) Method and device for gas analysis.
EP0641992A3 (en) Device and process systems for measuring manufacturing defects in semiconductors.
DE69421872D1 (de) Plasmaerzeugungsverfahren und -gerät und Plasmabearbeitungsverfahren und -gerät
EP0652511A3 (en) Method and device for generating software with parallel processing.
EP0629958A3 (en) Method and device for processing a document.
GB9419001D0 (en) Assay method
KR960011743A (ko) 데이타 처리 시스템에 관한 장치 및 방법
DE69005815T2 (de) Verfahren und gerät zum plasmaschneiden.