MX344765B - Dispositivo de semiconductor que tiene caracteristicas para evitar la ingenieria inversa. - Google Patents
Dispositivo de semiconductor que tiene caracteristicas para evitar la ingenieria inversa.Info
- Publication number
- MX344765B MX344765B MX2015005339A MX2015005339A MX344765B MX 344765 B MX344765 B MX 344765B MX 2015005339 A MX2015005339 A MX 2015005339A MX 2015005339 A MX2015005339 A MX 2015005339A MX 344765 B MX344765 B MX 344765B
- Authority
- MX
- Mexico
- Prior art keywords
- disclosed
- devices
- reverse engineering
- features
- semiconductor device
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 238000000034 method Methods 0.000 abstract 4
- 238000004519 manufacturing process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/57—Protection from inspection, reverse engineering or tampering
- H01L23/573—Protection from inspection, reverse engineering or tampering using passive means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/20—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
- H01L28/24—Resistors with an active material comprising a refractory, transition or noble metal, metal compound or metal alloy, e.g. silicides, oxides, nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
Es deseable diseñar y fabricar chips electrónicos que sean resistentes a las técnicas de ingeniería inversa modernas; se divulga un método y dispositivo que permiten el diseño de chips cuya ingeniería es difícil de invertir utilizando técnicas de desmontaje modernas; el dispositivo divulgado utiliza dispositivos que tienen la misma geometría pero diferentes niveles de voltaje para crear diferentes dispositivos lógicos; de manera alternativa, los dispositivos divulgados tienen diferentes geometrías y las mismas características operativas; también se divulga un método para diseñar un chip utilizando estos dispositivos.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/663,921 US9287879B2 (en) | 2011-06-07 | 2012-10-30 | Semiconductor device having features to prevent reverse engineering |
PCT/US2012/069819 WO2014070216A1 (en) | 2012-10-30 | 2012-12-14 | Semiconductor device having features to prevent reverse engineering |
Publications (2)
Publication Number | Publication Date |
---|---|
MX2015005339A MX2015005339A (es) | 2015-08-13 |
MX344765B true MX344765B (es) | 2016-12-01 |
Family
ID=50628284
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MX2015005339A MX344765B (es) | 2012-10-30 | 2012-12-14 | Dispositivo de semiconductor que tiene caracteristicas para evitar la ingenieria inversa. |
Country Status (10)
Country | Link |
---|---|
US (2) | US9287879B2 (es) |
EP (1) | EP2915257B1 (es) |
CN (2) | CN105324940B (es) |
AP (1) | AP2015008487A0 (es) |
BR (1) | BR112015009523A2 (es) |
CA (1) | CA2890031A1 (es) |
EA (1) | EA201590755A1 (es) |
HK (1) | HK1209914A1 (es) |
MX (1) | MX344765B (es) |
WO (1) | WO2014070216A1 (es) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9287879B2 (en) * | 2011-06-07 | 2016-03-15 | Verisiti, Inc. | Semiconductor device having features to prevent reverse engineering |
US9218511B2 (en) * | 2011-06-07 | 2015-12-22 | Verisiti, Inc. | Semiconductor device having features to prevent reverse engineering |
US10262956B2 (en) | 2017-02-27 | 2019-04-16 | Cisco Technology, Inc. | Timing based camouflage circuit |
JP7109755B2 (ja) * | 2018-02-15 | 2022-08-01 | 株式会社吉川システック | 半導体装置 |
Family Cites Families (50)
Publication number | Priority date | Publication date | Assignee | Title |
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US4376947A (en) * | 1979-09-04 | 1983-03-15 | Texas Instruments Incorporated | Electrically programmable floating gate semiconductor memory device |
US4583011A (en) * | 1983-11-01 | 1986-04-15 | Standard Microsystems Corp. | Circuit to prevent pirating of an MOS circuit |
JPS60257145A (ja) * | 1984-06-01 | 1985-12-18 | Hitachi Ltd | 半導体装置の試験法 |
US4933898A (en) | 1989-01-12 | 1990-06-12 | General Instrument Corporation | Secure integrated circuit chip with conductive shield |
US5065200A (en) * | 1989-12-21 | 1991-11-12 | Bell Communications Research, Inc. | Geometry dependent doping and electronic devices produced thereby |
IL106513A (en) * | 1992-07-31 | 1997-03-18 | Hughes Aircraft Co | Integrated circuit security system and method with implanted interconnections |
US5783846A (en) | 1995-09-22 | 1998-07-21 | Hughes Electronics Corporation | Digital circuit with transistor geometry and channel stops providing camouflage against reverse engineering |
US5923212A (en) * | 1997-05-12 | 1999-07-13 | Philips Electronics North America Corporation | Bias generator for a low current divider |
US5999019A (en) * | 1997-10-10 | 1999-12-07 | The Research Foundation Of State University Of New York | Fast CMOS logic circuit with critical voltage transition logic |
US6498851B1 (en) * | 1998-11-25 | 2002-12-24 | Sandisk Corporation | Data encryption and signal scrambling using programmable data conversion arrays |
US6326675B1 (en) * | 1999-03-18 | 2001-12-04 | Philips Semiconductor, Inc. | Semiconductor device with transparent link area for silicide applications and fabrication thereof |
US6117762A (en) | 1999-04-23 | 2000-09-12 | Hrl Laboratories, Llc | Method and apparatus using silicide layer for protecting integrated circuits from reverse engineering |
US6815816B1 (en) | 2000-10-25 | 2004-11-09 | Hrl Laboratories, Llc | Implanted hidden interconnections in a semiconductor device for preventing reverse engineering |
US7294935B2 (en) | 2001-01-24 | 2007-11-13 | Hrl Laboratories, Llc | Integrated circuits protected against reverse engineering and method for fabricating the same using an apparent metal contact line terminating on field oxide |
US20020096744A1 (en) | 2001-01-24 | 2002-07-25 | Hrl Laboratories, Llc | Integrated circuits protected against reverse engineering and method for fabricating the same using etched passivation openings in integrated circuits |
US7135734B2 (en) * | 2001-08-30 | 2006-11-14 | Micron Technology, Inc. | Graded composition metal oxide tunnel barrier interpoly insulators |
JP4044446B2 (ja) * | 2002-02-19 | 2008-02-06 | セイコーインスツル株式会社 | 半導体装置およびその製造方法 |
US6897535B2 (en) | 2002-05-14 | 2005-05-24 | Hrl Laboratories, Llc | Integrated circuit with reverse engineering protection |
US6998722B2 (en) * | 2002-07-08 | 2006-02-14 | Viciciv Technology | Semiconductor latches and SRAM devices |
US6855988B2 (en) * | 2002-07-08 | 2005-02-15 | Viciciv Technology | Semiconductor switching devices |
US7049667B2 (en) | 2002-09-27 | 2006-05-23 | Hrl Laboratories, Llc | Conductive channel pseudo block process and circuit to inhibit reverse engineering |
US7197647B1 (en) | 2002-09-30 | 2007-03-27 | Carnegie Mellon University | Method of securing programmable logic configuration data |
US6979606B2 (en) | 2002-11-22 | 2005-12-27 | Hrl Laboratories, Llc | Use of silicon block process step to camouflage a false transistor |
KR20050011317A (ko) | 2003-07-22 | 2005-01-29 | 삼성전자주식회사 | 리버스 엔지니어링 방지수단을 구비하는 반도체 집적회로및 이의 리버스 엔지니어링 방지방법 |
US7115460B2 (en) * | 2003-09-04 | 2006-10-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Standard cell back bias architecture |
CN100372028C (zh) * | 2003-10-24 | 2008-02-27 | 上海宏力半导体制造有限公司 | 半导体电阻元件及其制造方法 |
US7262457B2 (en) * | 2004-01-05 | 2007-08-28 | Ememory Technology Inc. | Non-volatile memory cell |
US7060566B2 (en) * | 2004-06-22 | 2006-06-13 | Infineon Technologies Ag | Standby current reduction over a process window with a trimmable well bias |
US20060166457A1 (en) * | 2005-01-21 | 2006-07-27 | Liu Sarah X | Method of making transistors and non-silicided polysilicon resistors for mixed signal circuits |
JP4817984B2 (ja) * | 2006-06-20 | 2011-11-16 | 株式会社東芝 | 不揮発性半導体記憶装置及びその製造方法 |
US8084855B2 (en) | 2006-08-23 | 2011-12-27 | Rockwell Collins, Inc. | Integrated circuit tampering protection and reverse engineering prevention coatings and methods |
US8168487B2 (en) | 2006-09-28 | 2012-05-01 | Hrl Laboratories, Llc | Programmable connection and isolation of active regions in an integrated circuit using ambiguous features to confuse a reverse engineer |
US7596775B2 (en) | 2007-05-22 | 2009-09-29 | United Microelectronics Corp. | Method for determining a standard cell for IC design |
US7994042B2 (en) * | 2007-10-26 | 2011-08-09 | International Business Machines Corporation | Techniques for impeding reverse engineering |
FR2931289A1 (fr) * | 2008-05-13 | 2009-11-20 | St Microelectronics Rousset | Memoire a structure du type eeprom et a lecture seule |
US20100078727A1 (en) * | 2008-10-01 | 2010-04-01 | Min Byoung W | eFuse and Resistor Structures and Method for Forming Same in Active Region |
US7989918B2 (en) | 2009-01-26 | 2011-08-02 | International Business Machines Corporation | Implementing tamper evident and resistant detection through modulation of capacitance |
US8510700B2 (en) * | 2009-02-24 | 2013-08-13 | Syphermedia International, Inc. | Method and apparatus for camouflaging a standard cell based integrated circuit with micro circuits and post processing |
US8151235B2 (en) | 2009-02-24 | 2012-04-03 | Syphermedia International, Inc. | Camouflaging a standard cell based integrated circuit |
US8418091B2 (en) | 2009-02-24 | 2013-04-09 | Syphermedia International, Inc. | Method and apparatus for camouflaging a standard cell based integrated circuit |
US8111089B2 (en) | 2009-05-28 | 2012-02-07 | Syphermedia International, Inc. | Building block for a secure CMOS logic cell library |
KR101462742B1 (ko) | 2009-10-14 | 2014-11-17 | 차오로직스, 아이엔씨. | 가변 회로 토폴로지를 가지는 고활용도 범용 로직 어레이 및 상수 전력 특징을 가지는 다양한 로직 게이트를 실현하기 위한 로지스틱 맵 회로 |
US8759872B2 (en) * | 2010-06-22 | 2014-06-24 | Suvolta, Inc. | Transistor with threshold voltage set notch and method of fabrication thereof |
FR2967810B1 (fr) | 2010-11-18 | 2012-12-21 | St Microelectronics Rousset | Procede de fabrication d'un circuit integre protege contre l'ingenierie inverse |
US9437555B2 (en) * | 2011-06-07 | 2016-09-06 | Verisiti, Inc. | Semiconductor device having features to prevent reverse engineering |
US9287879B2 (en) * | 2011-06-07 | 2016-03-15 | Verisiti, Inc. | Semiconductor device having features to prevent reverse engineering |
US8975748B1 (en) * | 2011-06-07 | 2015-03-10 | Secure Silicon Layer, Inc. | Semiconductor device having features to prevent reverse engineering |
US9218511B2 (en) * | 2011-06-07 | 2015-12-22 | Verisiti, Inc. | Semiconductor device having features to prevent reverse engineering |
US20150071434A1 (en) * | 2011-06-07 | 2015-03-12 | Static Control Components, Inc. | Secure Semiconductor Device Having Features to Prevent Reverse Engineering |
US20120313664A1 (en) * | 2011-06-07 | 2012-12-13 | Static Control Components, Inc. | Semiconductor Device Having Features to Prevent Reverse Engineering |
-
2012
- 2012-10-30 US US13/663,921 patent/US9287879B2/en not_active Expired - Fee Related
- 2012-12-14 BR BR112015009523-2A patent/BR112015009523A2/pt not_active IP Right Cessation
- 2012-12-14 CN CN201280076808.7A patent/CN105324940B/zh not_active Expired - Fee Related
- 2012-12-14 EA EA201590755A patent/EA201590755A1/ru unknown
- 2012-12-14 CA CA2890031A patent/CA2890031A1/en not_active Abandoned
- 2012-12-14 EP EP12887826.1A patent/EP2915257B1/en active Active
- 2012-12-14 CN CN201910962117.0A patent/CN110783329A/zh active Pending
- 2012-12-14 MX MX2015005339A patent/MX344765B/es active IP Right Grant
- 2012-12-14 AP AP2015008487A patent/AP2015008487A0/xx unknown
- 2012-12-14 WO PCT/US2012/069819 patent/WO2014070216A1/en active Application Filing
-
2015
- 2015-10-22 HK HK15110403.3A patent/HK1209914A1/xx unknown
-
2016
- 2016-03-08 US US15/064,062 patent/US20170062425A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
WO2014070216A1 (en) | 2014-05-08 |
EP2915257A1 (en) | 2015-09-09 |
EP2915257A4 (en) | 2016-12-14 |
EA201590755A1 (ru) | 2015-10-30 |
MX2015005339A (es) | 2015-08-13 |
US9287879B2 (en) | 2016-03-15 |
CN105324940B (zh) | 2020-02-14 |
AP2015008487A0 (en) | 2015-05-31 |
CN105324940A (zh) | 2016-02-10 |
US20130154687A1 (en) | 2013-06-20 |
US20170062425A1 (en) | 2017-03-02 |
CA2890031A1 (en) | 2014-05-08 |
BR112015009523A2 (pt) | 2018-05-22 |
EP2915257B1 (en) | 2020-07-01 |
CN110783329A (zh) | 2020-02-11 |
HK1209914A1 (en) | 2016-04-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG | Grant or registration | ||
HC | Change of company name or juridical status |
Owner name: MICROSOFT TECHNOLOGY LICENSING, LLC |