MX2010003747A - Metodo para producir un electrodo hecho con oxido de molibdeno. - Google Patents

Metodo para producir un electrodo hecho con oxido de molibdeno.

Info

Publication number
MX2010003747A
MX2010003747A MX2010003747A MX2010003747A MX2010003747A MX 2010003747 A MX2010003747 A MX 2010003747A MX 2010003747 A MX2010003747 A MX 2010003747A MX 2010003747 A MX2010003747 A MX 2010003747A MX 2010003747 A MX2010003747 A MX 2010003747A
Authority
MX
Mexico
Prior art keywords
molybdenum oxide
producing
substrate
molybdenum
electrode made
Prior art date
Application number
MX2010003747A
Other languages
English (en)
Inventor
St Phane Auvray
Nikolas Janke
Original Assignee
Saint Gobain
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint Gobain filed Critical Saint Gobain
Publication of MX2010003747A publication Critical patent/MX2010003747A/es

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

La presente invenci?n se refiere a un sustrato principalmente dise?ado para entrar en la constituci?n de una celda solar, del cual una cara, llamada la cara interna, est? dise?ada para recibir un elemento conductor a base de molibdeno. Este sustrato se caracteriza en que el elemento conductor est? formado de varias capas a base de molibdeno, donde al menos una de estas capas est? enriquecida con ?xido de molibdeno. La presente invenci?n ambi?n se refiere a celdas solares que emplean este sustrato y a un m?todo para producirlo.
MX2010003747A 2007-10-12 2008-10-08 Metodo para producir un electrodo hecho con oxido de molibdeno. MX2010003747A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0758271A FR2922364B1 (fr) 2007-10-12 2007-10-12 Procede de fabrication d'une electrode en oxyde de molybdene
PCT/FR2008/051817 WO2009053608A2 (fr) 2007-10-12 2008-10-08 Procede de fabrication d'une electrode en oxyde de molybdene

Publications (1)

Publication Number Publication Date
MX2010003747A true MX2010003747A (es) 2010-04-30

Family

ID=39432178

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2010003747A MX2010003747A (es) 2007-10-12 2008-10-08 Metodo para producir un electrodo hecho con oxido de molibdeno.

Country Status (8)

Country Link
US (1) US8728928B2 (es)
EP (1) EP2210276B1 (es)
JP (1) JP5658035B2 (es)
KR (1) KR101625236B1 (es)
CN (1) CN101821855B (es)
FR (1) FR2922364B1 (es)
MX (1) MX2010003747A (es)
WO (1) WO2009053608A2 (es)

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US8134069B2 (en) * 2009-04-13 2012-03-13 Miasole Method and apparatus for controllable sodium delivery for thin film photovoltaic materials
KR101081194B1 (ko) * 2009-06-16 2011-11-07 엘지이노텍 주식회사 태양전지의 제조장치, 이를 이용한 태양전지의 제조방법
US20110240123A1 (en) * 2010-03-31 2011-10-06 Hao Lin Photovoltaic Cells With Improved Electrical Contact
DE102010017246A1 (de) * 2010-06-04 2011-12-08 Solibro Gmbh Solarzellenmodul und Herstellungsverfahren hierfür
JP2012077321A (ja) * 2010-09-30 2012-04-19 Sumitomo Heavy Ind Ltd 成膜基板の製造方法、成膜基板、および成膜装置
US9312417B2 (en) * 2010-10-22 2016-04-12 Guardian Industries Corp. Photovoltaic modules, and/or methods of making the same
JP2012160556A (ja) * 2011-01-31 2012-08-23 Showa Shell Sekiyu Kk Ｃｚｔｓ系薄膜太陽電池の製造方法
JPWO2012124463A1 (ja) * 2011-03-17 2014-07-17 三洋電機株式会社 太陽電池及び太陽電池モジュール
US8813325B2 (en) * 2011-04-12 2014-08-26 Intermolecular, Inc. Method for fabricating a DRAM capacitor
KR101326951B1 (ko) * 2011-10-25 2013-11-13 엘지이노텍 주식회사 태양전지 및 이의 제조방법
KR101219972B1 (ko) * 2011-11-02 2013-01-21 엘지이노텍 주식회사 태양전지 및 이의 제조방법
KR101283174B1 (ko) * 2011-11-07 2013-07-05 엘지이노텍 주식회사 태양전지 및 이의 제조방법
FR2982422B1 (fr) * 2011-11-09 2013-11-15 Saint Gobain Substrat conducteur pour cellule photovoltaique
FR2983642B1 (fr) * 2011-12-05 2014-01-03 Nexcis Interface perfectionnee entre une couche i-iii-vi2 et une couche de contact arriere, dans une cellule photovoltaique.
JP5826094B2 (ja) * 2012-03-30 2015-12-02 株式会社半導体エネルギー研究所 ｐ型半導体材料、および光電変換装置の作製方法
DE102012205375A1 (de) * 2012-04-02 2013-10-02 Robert Bosch Gmbh Mehrschicht-Rückelektrode für eine photovoltaische Dünnschichtsolarzelle, Verwen-dung der Mehrschicht-Rückelektrode für die Herstellung von Dünnschichtsolarzellen und -modulen, photovoltaische Dünnschichtsolarzellen und -module enthaltend die Mehrschicht-Rückelektrode sowie ein Verfahren zur Herstellung photovoltaischer Dünnschichtsolarzellen und -module
US20140041721A1 (en) * 2012-08-09 2014-02-13 Samsung Sdi Co., Ltd. Solar cell and manufacturing method thereof
KR101436538B1 (ko) * 2012-11-06 2014-09-02 엘에스엠트론 주식회사 박막형 태양전지 및 그 제조방법
KR101436541B1 (ko) * 2012-11-06 2014-09-02 엘에스엠트론 주식회사 박막형 태양전지 및 그 제조방법
CN102983219B (zh) * 2012-12-03 2015-04-15 深圳先进技术研究院 薄膜太阳能电池组件的制备方法
CN104576780A (zh) * 2015-01-26 2015-04-29 苏州瑞晟纳米科技有限公司 基于表面氧化法制备太阳能电池背电极钝化层的工艺
WO2019146636A1 (ja) * 2018-01-23 2019-08-01 日本板硝子株式会社 被膜付き基板及び被膜付き基板の製造方法
CN108878570B (zh) * 2018-06-01 2020-06-26 上海大学 空穴选择型MoOx/SiOx(Mo)/n-Si异质结、太阳电池器件及其制备方法
CN109825804B (zh) * 2019-04-16 2019-12-20 铜仁梵能移动能源有限公司 一种卷式pvd制备叠层渐变钼电极工艺

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Also Published As

Publication number Publication date
WO2009053608A3 (fr) 2009-09-17
US8728928B2 (en) 2014-05-20
WO2009053608A2 (fr) 2009-04-30
EP2210276A2 (fr) 2010-07-28
FR2922364A1 (fr) 2009-04-17
KR101625236B1 (ko) 2016-05-27
JP5658035B2 (ja) 2015-01-21
CN101821855B (zh) 2012-11-14
CN101821855A (zh) 2010-09-01
FR2922364B1 (fr) 2014-08-22
EP2210276B1 (fr) 2013-07-24
JP2011501404A (ja) 2011-01-06
KR20100067690A (ko) 2010-06-21
US20100282300A1 (en) 2010-11-11

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