CN104576780A - 基于表面氧化法制备太阳能电池背电极钝化层的工艺 - Google Patents
基于表面氧化法制备太阳能电池背电极钝化层的工艺 Download PDFInfo
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Abstract
本专利涉及一种采用表面氧化法制备薄膜太阳能电池背电极钝化层的工艺。这种背电极的特征在于背电极由两种成分组成,其结构包括:缓冲层,为具有较松散结构的Mo薄膜,使电极与衬底形成良好的接触;导电层,为与缓冲层不同结构的Mo薄膜,具有良好的导电性能,用于收集传导吸收层产生的电子;钝化层,为在Mo导电层表面利用表面氧化的技术引入了一层掺杂MoO2的Mo薄层,与吸收层形成良好接触,并保持优良的导电性能,继而提高太阳能电池器件效率。采用表面氧化法制备的背电极钝化层具有易加工,工艺连续以及可操控性强的特点,在未来的太阳能光伏工业领域有着广阔的应用前景。
Description
技术领域
本发明属于太阳能电池领域,涉及到一种采用表面氧化法制备CIGS太阳能电池背电极钝化层的工艺。
技术背景
随着铜铟镓硒CIGS薄膜太阳能电池的研究和发展,金属Mo薄膜以其具有高的良好热稳定性,低电阻率,可形成良好的欧姆接触以及相近的热膨胀系数的特点,成为CIGS薄膜太阳能电池最常用的背电极层,并且是目前最适合的被接触层。Mo薄膜的相结构,形貌和电阻率等性能直接影响吸收层CIGS薄膜的形核,生长及表面形貌,进而对电池性能产生重要影响。近年来随着薄膜太阳能电池的飞速发展,要求Mo电极即与玻璃衬底具有良好的结合,并且具有较低的电阻率。目前比较成熟的“两步气压沉积法”沉积的Mo薄膜基本能够达到上述要求。但由于第二段低气压沉积的Mo薄膜沉积能量较高,Mo晶粒与吸收层CIGS的晶粒尺寸相差较大,影响电池的界面质量。但高效太阳能电池要求更加优良的电极,其不仅要其有良好的粘接性与导电性,同时还能改善CIGS吸收层,提高电池的性能。本发明旨在“两步气压沉积法”的基础上,额外增加一层薄的掺杂MoO2的钝化Mo层能够有效改善电池界面质量,提高与CIGS的界面结合,同时疏松的Mo晶粒结构有利于Na的扩散;MoO2的高化学稳定性能够抑制MoSe的形成,控制MoSe层的厚度,阻止硒化对CIGS太阳能电池电压的抑制作用,提高电池开路电压,进而提高CIGS太阳能电池的光电转化效率。
发明内容
本发明的目的在于提供一种能够具有较低电阻率的同时与玻璃衬底和CIGS吸收层形成良好结合的背电极Mo层。本发明采用溅射法生长Mo背电极,在“两步气压沉积法”的基础上,继续沉积第三层的Mo,并同时引入O2,使Mo与O发生反应溅射,在Mo层中掺杂MoO2。本发明是一种基于掺杂引入MoO2的钝化Mo背电极。特征在于:
—玻璃衬底(1)
—高电阻率缓冲层(2),该缓冲层制备在玻璃衬底上,与玻璃衬底形成紧密结合
—低电阻率导电层(3),该层制备在缓冲层上,Mo晶粒较大,提高背电极的电导率
—掺杂MoO2的Mo钝化层(4),该层在导电层上部,与CIGS缓冲层形成过渡接触
其中玻璃衬底(1)为高质量NaCa玻璃
其中缓冲层(2)为高气压,低功率制备的疏松Mo层
其中导电层(3)为低气压,高功率制备的大晶粒Mo层
其中钝化层(4)为低气压Ar和O2混合气氛下生长的掺杂MoO2的Mo层
本发明的积极效果是提高了Mo层与CIGS吸收层的结合,有利于衬底中Na的扩散,可以调控MoSe的厚度。
附图说明
为进一步说明本发明的内容以及特点,以下结合附图对本发明作详细的描述,其中:
图1 本发明钝化电极的示意图
图2 不同厚度钝化电极层对电池开路电压和效率的提高比较
具体实施方式
为使本发明的目的、技术方案以及优点更加清楚明白,以下结合具体的实施例并结合参照附图进行具体说明。
如图1所示,为本发明提供的由反应溅射法引入的MoO2掺杂的Mo背电极结构示意图。该电极包括玻璃衬底(1),高电阻率缓冲层(2),低电阻率导电层(3),反应溅射法制备的掺杂MoO2的Mo钝化层(4)。
所述的玻璃衬底(1)为钠钙玻璃;高电阻率缓冲层(2)为高气压下制备的结构粗糙的Mo缓冲层,可与玻璃衬底形成良好结合,厚度通常为50-500nm;低电阻率导电层(3)为低气压下制备的大晶粒导电Mo层,保证电极整体良好的电导率,厚度通常为100-1000nm;掺杂MoO2的Mo钝化层(4)采用反应溅射法在溅射Mo层时通适量氧气,引入MoO2掺杂,此层厚度通常为10-300nm。
实验例
1、将清洗干净的衬底放入磁控溅射设备真空腔中,待直流溅射的本底真空为3-9E-7mTorr,开始运行磁控溅射工艺沉积Mo薄膜,制备衬底缓冲层(2)。Mo缓冲层(2)在8-12mTorr的气压,200-400w的功率下沉积厚度为50-500nm。
2、在缓冲层的基础上,改变工艺参数,继续沉积厚度为100-1000nm的Mo导电层(3)。
3、导电层(3)达到要求厚度后,改变工作气体为氩气和氧气的混合气体,氧气流量为氩气的10-50%。沉积厚度为30-200nm的掺杂MoO2的Mo钝化层(4)。
这种复合电极与衬底有良好的粘接性,同时其方块电阻<1欧姆,具有非常好的导电性,由于钝化层的作用,使用该结构的电极制作的CIGS电池具有更高的开路电压和光电转化效率(图2)。
以上所述的具体施例,对本发明的目的、技术方案和积极的效果进行了进一步详细说明,所应理解的是,以上所述仅为本发明的具体施例而已,并不用于限制本发明,凡在本发明的原则之内所做的任何修和改进等,均应包含在本发明的保护范围之内。
Claims (5)
1.一种采用表面氧化法制备的钝化背电极,其特征在于,包括:
衬底;
缓冲层,该缓冲层制作在衬底上,使电极与衬底形成良好的接触;
导电层,该导电层制作在缓冲层上,是收集载流子,导电的主要部分;
钝化层,制作在导电层上,通过反应溅射形成氧化物掺杂,与吸收层形成良好接触。
2.如权利要求1所述的采用表面氧化法制备的钝化背电极,其特征在于,其中钝化层是在工作气体Ar中通入与Ar的比例为20-50%的氧气,通过反应溅射在Mo层中引入氧化钼掺杂,生长的厚度为10-300nm。
3.如权利要求1所述的采用表面氧化法制备的钝化背电极,其特征在于,其中导电层是在低气压下生长的,具有致密微观结构和小电阻的Mo薄膜,其厚度在50-500nm之间。
4.如权利要求1所述的采用表面氧化法制备的钝化背电极,其特征在于,其中缓冲层是在高气压下生长的,具有粗糙疏松微观结构和大电阻的Mo薄膜,其厚度在100-1000nm之间。
5.如权利要求1所述的基于CIGS薄膜电池的复合背电极,其三层Mo薄膜组成的复合背电极是在同一磁控溅射设备中使用同一个靶,采用不同工艺参数连续制作的。
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CN110783812A (zh) * | 2019-11-21 | 2020-02-11 | 江苏索尔思通信科技有限公司 | 一种具有低接触电阻的InP基半导体激光器结构及其制备方法 |
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CN110783812A (zh) * | 2019-11-21 | 2020-02-11 | 江苏索尔思通信科技有限公司 | 一种具有低接触电阻的InP基半导体激光器结构及其制备方法 |
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