MX2008003218A - Proceso de deposicion. - Google Patents

Proceso de deposicion.

Info

Publication number
MX2008003218A
MX2008003218A MX2008003218A MX2008003218A MX2008003218A MX 2008003218 A MX2008003218 A MX 2008003218A MX 2008003218 A MX2008003218 A MX 2008003218A MX 2008003218 A MX2008003218 A MX 2008003218A MX 2008003218 A MX2008003218 A MX 2008003218A
Authority
MX
Mexico
Prior art keywords
deposition process
coating
dopant
fluorine
aluminium
Prior art date
Application number
MX2008003218A
Other languages
English (en)
Inventor
Liang Ye
Original Assignee
Pilkington Group Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pilkington Group Ltd filed Critical Pilkington Group Ltd
Publication of MX2008003218A publication Critical patent/MX2008003218A/es

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
    • C03C17/3417—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials all coatings being oxide coatings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/453—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating passing the reaction gases through burners or torches, e.g. atmospheric pressure CVD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45595—Atmospheric CVD gas inlets with no enclosed reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Surface Treatment Of Glass (AREA)
  • Laminated Bodies (AREA)

Abstract

Un recubrimiento de oxido de zinc se deposita sobre la superficie de una cinta de vidrio continua durante un proceso de produccion de vidrio flotado usando un proceso quimico de deposicion de vapor en el que el vapor comprende precursor dialquil zinc y al menos un compuesto organico que contiene oxigeno que es de preferencia etil acetato. La conductividad del recubrimiento puede aumentarse al introducir un adulterante tal como fluor o aluminio. El vidrio recubierto es util en control solar y vidriado de baja emisividad.
MX2008003218A 2005-09-09 2006-09-11 Proceso de deposicion. MX2008003218A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0518383.5A GB0518383D0 (en) 2005-09-09 2005-09-09 Deposition process
PCT/GB2006/003338 WO2007029014A1 (en) 2005-09-09 2006-09-11 Deposition process

Publications (1)

Publication Number Publication Date
MX2008003218A true MX2008003218A (es) 2008-03-18

Family

ID=35221164

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2008003218A MX2008003218A (es) 2005-09-09 2006-09-11 Proceso de deposicion.

Country Status (12)

Country Link
US (1) US20090305057A1 (es)
EP (1) EP1957690A1 (es)
JP (1) JP2009508000A (es)
KR (1) KR20080043336A (es)
CN (1) CN101384748A (es)
AU (1) AU2006288933B2 (es)
BR (1) BRPI0615452A2 (es)
CA (1) CA2621305A1 (es)
GB (1) GB0518383D0 (es)
MX (1) MX2008003218A (es)
RU (1) RU2008113832A (es)
WO (1) WO2007029014A1 (es)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007130448A2 (en) * 2006-05-05 2007-11-15 Pilkington Group Limited Method of depositing zinc oxide coatings on a substrate
US7670647B2 (en) 2006-05-05 2010-03-02 Pilkington Group Limited Method for depositing zinc oxide coatings on flat glass
BRPI0712316A2 (pt) * 2006-06-05 2012-01-24 Pilkington Group Ltd artigo de vidro revestido, unidade de vidro isolado, e método para formar um artigo de vidro revestido
US8158262B2 (en) 2006-06-05 2012-04-17 Pilkington Group Limited Glass article having a zinc oxide coating and method for making same
KR101429785B1 (ko) * 2006-08-29 2014-08-18 필킹톤 그룹 리미티드 저 저항률의 도핑된 아연 산화물 코팅의 제조 방법 및 그에 의해 형성된 물품
JP5559536B2 (ja) * 2006-08-29 2014-07-23 ピルキントン グループ リミテッド 低い抵抗率のドープ酸化亜鉛でコーティングされたガラス物品の製造方法及びその製造方法により製造されるコーティングされたガラス物品
CN102249551A (zh) * 2011-06-15 2011-11-23 蚌埠玻璃工业设计研究院 氟掺杂氧化锌透明导电膜玻璃的生产方法
US9776914B2 (en) 2012-03-16 2017-10-03 Pilkington Group Limited Chemical vapor deposition process for depositing zinc oxide coatings, method for forming a conductive glass article and the coated glass articles produced thereby
CN103029379A (zh) * 2012-12-10 2013-04-10 广东志成冠军集团有限公司 双面镀膜低辐射玻璃及其制备方法
GB201521165D0 (en) * 2015-12-01 2016-01-13 Pilkington Group Ltd Method for depositing a coating

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0682625B2 (ja) * 1985-06-04 1994-10-19 シーメンス ソーラー インダストリーズ，エル．ピー． 酸化亜鉛膜の蒸着方法
US4990286A (en) * 1989-03-17 1991-02-05 President And Fellows Of Harvard College Zinc oxyfluoride transparent conductor
FR2662153A1 (fr) * 1990-05-16 1991-11-22 Saint Gobain Vitrage Int Produit a substrat en verre portant une couche conductrice transparente contenant du zinc et de l'indium et procede pour l'obtenir.
US6238738B1 (en) * 1996-08-13 2001-05-29 Libbey-Owens-Ford Co. Method for depositing titanium oxide coatings on flat glass
US6071561A (en) * 1997-08-13 2000-06-06 President And Fellows Of Harvard College Chemical vapor deposition of fluorine-doped zinc oxide
JP3227449B2 (ja) * 1999-05-28 2001-11-12 日本板硝子株式会社 光電変換装置用基板とその製造方法、およびこれを用いた光電変換装置
JP2001085722A (ja) * 1999-09-17 2001-03-30 Mitsubishi Heavy Ind Ltd 透明電極膜の製造方法及び太陽電池
JP2001348667A (ja) * 2000-06-06 2001-12-18 Mitsubishi Heavy Ind Ltd Ｃｖｄ成膜方法とその装置
US6416814B1 (en) * 2000-12-07 2002-07-09 First Solar, Llc Volatile organometallic complexes of lowered reactivity suitable for use in chemical vapor deposition of metal oxide films
JP2003060217A (ja) * 2001-08-10 2003-02-28 Nippon Sheet Glass Co Ltd 導電膜付きガラス板
JP3605643B2 (ja) * 2002-07-08 2004-12-22 国立大学法人島根大学 酸化亜鉛系薄膜の成長方法
JP4699092B2 (ja) * 2005-06-01 2011-06-08 日本パイオニクス株式会社 酸化亜鉛膜の成膜方法

Also Published As

Publication number Publication date
BRPI0615452A2 (pt) 2011-05-17
KR20080043336A (ko) 2008-05-16
CN101384748A (zh) 2009-03-11
JP2009508000A (ja) 2009-02-26
EP1957690A1 (en) 2008-08-20
US20090305057A1 (en) 2009-12-10
RU2008113832A (ru) 2009-10-20
GB0518383D0 (en) 2005-10-19
CA2621305A1 (en) 2007-03-15
AU2006288933A1 (en) 2007-03-15
AU2006288933B2 (en) 2011-07-28
WO2007029014A1 (en) 2007-03-15

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