MX148428A - Mejoras a dispositivo semiconductor con baja impedancia termica y baja resistencia electrica - Google Patents

Mejoras a dispositivo semiconductor con baja impedancia termica y baja resistencia electrica

Info

Publication number
MX148428A
MX148428A MX181628A MX18162880A MX148428A MX 148428 A MX148428 A MX 148428A MX 181628 A MX181628 A MX 181628A MX 18162880 A MX18162880 A MX 18162880A MX 148428 A MX148428 A MX 148428A
Authority
MX
Mexico
Prior art keywords
low
semiconductor device
electrical resistance
thermal impedance
low thermal
Prior art date
Application number
MX181628A
Other languages
English (en)
Inventor
Julie Yung Fichot
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of MX148428A publication Critical patent/MX148428A/es

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736—Metallic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/37025—Plural core members
    • H01L2224/37026—Plural core members being mutually engaged together, e.g. through inserts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01025—Manganese [Mn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01028—Nickel [Ni]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
MX181628A 1979-03-19 1980-03-18 Mejoras a dispositivo semiconductor con baja impedancia termica y baja resistencia electrica MX148428A (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/021,488 US4278990A (en) 1979-03-19 1979-03-19 Low thermal resistance, low stress semiconductor package

Publications (1)

Publication Number Publication Date
MX148428A true MX148428A (es) 1983-04-20

Family

ID=21804515

Family Applications (1)

Application Number Title Priority Date Filing Date
MX181628A MX148428A (es) 1979-03-19 1980-03-18 Mejoras a dispositivo semiconductor con baja impedancia termica y baja resistencia electrica

Country Status (7)

Country Link
US (1) US4278990A (es)
JP (1) JPS55133562A (es)
BR (1) BR8001625A (es)
CH (1) CH652533A5 (es)
DE (1) DE3009295A1 (es)
FR (1) FR2452178B1 (es)
MX (1) MX148428A (es)

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5032898A (en) * 1979-12-10 1991-07-16 Amp Incorporated Electro-optic device assembly having integral heat sink/retention means
US4336568A (en) * 1980-07-24 1982-06-22 Westinghouse Electric Corp. Packaged solid state power controller with separable mounting for a power switching device, and method of assembly
JPS5753947A (en) * 1980-09-17 1982-03-31 Hitachi Ltd Transistor and electronic device containing it
FR2495846A1 (fr) * 1980-12-05 1982-06-11 Cii Honeywell Bull Dispositif de connexion electrique a haute densite de contacts
FR2495838A1 (fr) * 1980-12-05 1982-06-11 Cii Honeywell Bull Dispositif de refroidissement amovible pour supports de circuits integres
EP0076802A4 (en) * 1981-02-27 1984-12-11 Motorola Inc PACKAGE FOR HIGH CURRENT POWER WITH LADDERS ON MULTIPLE LEVELS.
JPS6038867B2 (ja) * 1981-06-05 1985-09-03 株式会社日立製作所 絶縁型半導体装置
DE3127456A1 (de) * 1981-07-11 1983-02-03 Brown, Boveri & Cie Ag, 6800 Mannheim Stromrichteranordnung
JPS5846663A (ja) * 1981-08-29 1983-03-18 ロ−ベルト・ボツシユ・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング 半導体ダイオ−ド薄片を有する整流装置
US4538168A (en) * 1981-09-30 1985-08-27 Unitrode Corporation High power semiconductor package
DE3143339C2 (de) * 1981-10-31 1987-05-14 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Halbleiteranordnung
DE3147789A1 (de) * 1981-12-03 1983-06-09 Brown, Boveri & Cie Ag, 6800 Mannheim Leistungsmodul und verfahren zu seiner herstellung
DE3147790A1 (de) * 1981-12-03 1983-06-09 Brown, Boveri & Cie Ag, 6800 Mannheim Leistungsmodul und verfahren zu seiner herstellung
US4634638A (en) * 1981-12-17 1987-01-06 International Business Machines Corporation High melting point copper-gold-tin brazing alloy for chip carriers
US4510519A (en) * 1982-03-26 1985-04-09 Motorola, Inc. Electrically isolated semiconductor power device
US4583283A (en) * 1982-03-26 1986-04-22 Motorola, Inc. Electrically isolated semiconductor power device
US4594770A (en) * 1982-07-15 1986-06-17 Olin Corporation Method of making semiconductor casing
US4480262A (en) * 1982-07-15 1984-10-30 Olin Corporation Semiconductor casing
US4529836A (en) * 1983-07-15 1985-07-16 Sperry Corporation Stress absorption matrix
DE3513530A1 (de) * 1984-06-01 1985-12-05 Bbc Brown Boveri & Cie Verfahren zur herstellung von leistungshalbleitermodulen mit isoliertem aufbau
JPS611852U (ja) * 1984-06-08 1986-01-08 日本インター株式会社 複合半導体装置
US4775917A (en) * 1985-12-03 1988-10-04 Wells Manufacturing Company Thermal compensated circuit board interconnect apparatus and method of forming the same
DE3604882A1 (de) * 1986-02-15 1987-08-20 Bbc Brown Boveri & Cie Leistungshalbleitermodul und verfahren zur herstellung des moduls
US5012322A (en) * 1987-05-18 1991-04-30 Allegro Microsystems, Inc. Semiconductor die and mounting assembly
JPS6459947A (en) * 1987-08-31 1989-03-07 Toshiba Corp Semiconductor device
DE3837920A1 (de) * 1988-11-09 1990-05-10 Semikron Elektronik Gmbh Halbleiterelement
DE3839383A1 (de) * 1988-11-22 1990-05-23 Semikron Elektronik Gmbh Verfahren zum herstellen einer halbleiterbaueinheit und vorrichtung zur durchfuehrung des verfahrens
US5182628A (en) * 1989-06-28 1993-01-26 Hitachi, Ltd. Semiconductor device having particular solder interconnection arrangement
US5148264A (en) * 1990-05-02 1992-09-15 Harris Semiconductor Patents, Inc. High current hermetic package
DE4240843A1 (de) * 1992-12-04 1994-06-09 Bosch Gmbh Robert Anordnung zur Verlustwärmeableitung bei Leistungshalbleiterbauelementen
US5519253A (en) * 1993-09-07 1996-05-21 Delco Electronics Corp. Coaxial switch module
US5563447A (en) * 1993-09-07 1996-10-08 Delco Electronics Corp. High power semiconductor switch module
US5444295A (en) * 1993-09-07 1995-08-22 Delco Electronics Corp. Linear dual switch module
KR100322177B1 (ko) 1993-12-27 2002-05-13 이누이 도모지 내연기관용점화장치
US5539254A (en) * 1994-03-09 1996-07-23 Delco Electronics Corp. Substrate subassembly for a transistor switch module
US5517059A (en) * 1994-04-26 1996-05-14 Delco Electronics Corp. Electron and laser beam welding apparatus
US5594355A (en) * 1994-07-19 1997-01-14 Delta Design, Inc. Electrical contactor apparatus for testing integrated circuit devices
US5717252A (en) * 1994-07-25 1998-02-10 Mitsui High-Tec, Inc. Solder-ball connected semiconductor device with a recessed chip mounting area
DE69535775D1 (de) * 1994-10-07 2008-08-07 Hitachi Ltd Halbleiteranordnung mit einer Mehrzahl von Halbleiterelementen
US5906310A (en) * 1994-11-10 1999-05-25 Vlt Corporation Packaging electrical circuits
US5876859A (en) * 1994-11-10 1999-03-02 Vlt Corporation Direct metal bonding
JP2732823B2 (ja) * 1995-02-02 1998-03-30 ヴィエルティー コーポレーション はんだ付け方法
SG59997A1 (en) * 1995-06-07 1999-02-22 Ibm Apparatus and process for improved die adhesion to organic chip carries
DE19530264A1 (de) * 1995-08-17 1997-02-20 Abb Management Ag Leistungshalbleitermodul
US5848083A (en) * 1996-10-24 1998-12-08 Sdl, Inc. Expansion-matched high-thermal-conductivity stress-relieved mounting modules
US5895974A (en) * 1998-04-06 1999-04-20 Delco Electronics Corp. Durable substrate subassembly for transistor switch module
US6127727A (en) * 1998-04-06 2000-10-03 Delco Electronics Corp. Semiconductor substrate subassembly with alignment and stress relief features
US6404065B1 (en) * 1998-07-31 2002-06-11 I-Xys Corporation Electrically isolated power semiconductor package
US6316737B1 (en) 1999-09-09 2001-11-13 Vlt Corporation Making a connection between a component and a circuit board
US6985341B2 (en) 2001-04-24 2006-01-10 Vlt, Inc. Components having actively controlled circuit elements
US7443229B1 (en) 2001-04-24 2008-10-28 Picor Corporation Active filtering
US6731002B2 (en) 2001-05-04 2004-05-04 Ixys Corporation High frequency power device with a plastic molded package and direct bonded substrate
US6727585B2 (en) 2001-05-04 2004-04-27 Ixys Corporation Power device with a plastic molded package and direct bonded substrate
EP1538667A3 (de) * 2003-12-06 2007-04-18 LuK Lamellen und Kupplungsbau Beteiligungs KG Elektronisches Gerät mit elektrisch isoliertem metallischen Wärmeableitkörper
JP4965187B2 (ja) * 2006-08-09 2012-07-04 株式会社日立製作所 半導体装置
US7875972B2 (en) * 2009-06-25 2011-01-25 International Business Machines Corporation Semiconductor device assembly having a stress-relieving buffer layer
JP2016161410A (ja) * 2015-03-02 2016-09-05 株式会社東芝 歪検出素子、圧力センサ及びマイクロフォン
JP6336220B2 (ja) * 2015-12-04 2018-06-06 三菱電機株式会社 パワー半導体装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3089067A (en) * 1957-09-30 1963-05-07 Gen Motors Corp Semiconductor device
FR1357210A (fr) * 1962-05-10 1964-04-03 Bosch Gmbh Robert Nouveau dispositif à semi-conducteur
US3274456A (en) * 1962-11-21 1966-09-20 Gen Instrument Corp Rectifier assembly and method of making same
US3258661A (en) * 1962-12-17 1966-06-28 Sealed semiconductor device
FR1553893A (es) * 1967-11-28 1969-01-17
US3593070A (en) * 1968-12-17 1971-07-13 Texas Instruments Inc Submount for semiconductor assembly
DE1815989A1 (de) * 1968-12-20 1970-07-02 Semikron Gleichrichterbau Halbleiter-Anordnung
US3609471A (en) * 1969-07-22 1971-09-28 Gen Electric Semiconductor device with thermally conductive dielectric barrier
US3699402A (en) * 1970-07-27 1972-10-17 Gen Electric Hybrid circuit power module
JPS5228547B2 (es) * 1972-07-10 1977-07-27
DE2337694C2 (de) * 1973-07-25 1984-10-25 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Halbleitergleichrichteranordnung hoher Strombelastbarkeit
US4009485A (en) * 1974-12-23 1977-02-22 General Electric Company Semiconductor pellet assembly mounted on ceramic substrate
DE7512573U (de) * 1975-04-19 1975-09-04 Semikron Gesellschaft Fuer Gleichri Halbleitergleichrichteranordnung
US3994430A (en) * 1975-07-30 1976-11-30 General Electric Company Direct bonding of metals to ceramics and metals
DE2617335A1 (de) * 1976-04-21 1977-11-03 Siemens Ag Halbleiterbauelement
DE2731211A1 (de) * 1977-07-11 1979-01-25 Semikron Gleichrichterbau Halbleiterbaueinheit

Also Published As

Publication number Publication date
BR8001625A (pt) 1980-11-18
US4278990A (en) 1981-07-14
DE3009295A1 (de) 1980-10-02
JPS55133562A (en) 1980-10-17
FR2452178B1 (fr) 1986-04-18
FR2452178A1 (fr) 1980-10-17
CH652533A5 (de) 1985-11-15

Similar Documents

Publication Publication Date Title
MX148428A (es) Mejoras a dispositivo semiconductor con baja impedancia termica y baja resistencia electrica
BR7900563A (pt) Dispositivo eletrico e circuito eletrico
MX145179A (es) Mejoras en terminal electrica
MX147137A (es) Mejoras en mosfet con potencia elevada y baja resistencia directa
SE424382B (sv) Elektriskt kontaktaggregat
AR222536A1 (es) Dispositivo para realizar una conexion electrica
SE429076B (sv) Elektriskt kontaktaggregat
DK161279C (da) Elektrisk modstand
NO802838L (no) Toveis elektrisk kontaktanordning
SE7700405L (sv) Elektrisk kontaktanordning
SE427787B (sv) Elektrisk forbindningsanordning
AR211824A1 (es) Terminal de conexion electrica
SE7700222L (sv) Elektrisk kontakt samt forbindningsanordning innefattande sadan kontakt
MX148495A (es) Mejoras en una terminal electrica
SE426533B (sv) Elektrisk forbindningsanordning
SE410773B (sv) Elektriskt motstand
SE431924B (sv) Elektrisk forbindningsanordning
MX143302A (es) Aparato electrico encapsulado mejorado
DK441677A (da) Anordning ved elektrisk modstand
NO149014C (no) Elektrisk kontakt-innretning
AT359595B (de) Kontakteinrichtung in einer elektrisch leitenden drehverbindung
AT360610B (de) Elektrische schutzeinrichtung
MX146491A (es) Mejoras en terminal electrica
AR224913A1 (es) Una estructura electrica
MX144017A (es) Mejoras en conmutador de derivacion electrica