MD876G2 - Selective photodiode - Google Patents
Selective photodiodeInfo
- Publication number
- MD876G2 MD876G2 MD96-0338A MD960338A MD876G2 MD 876 G2 MD876 G2 MD 876G2 MD 960338 A MD960338 A MD 960338A MD 876 G2 MD876 G2 MD 876G2
- Authority
- MD
- Moldova
- Prior art keywords
- layer
- fact
- active layer
- frontal
- photodiode
- Prior art date
Links
Landscapes
- Light Receiving Elements (AREA)
Abstract
The invention relates to the semiconductor instrument engineering and may be utilized for the optical signals detection and processing, transmited through the fiber optical communication lines, through the Eearth atmosphere or through other optical media.The summary of the invention consists in the fact that the selective photodiode is manufactured on the heterostructure base, comprising a substrate n+InP with the length of the forbidden zone Eg0, the active layer Inx1Ga1-x1Asy1P1-y1 with Eg1, the frontal layer p+ Inx2Ga1-x2Asy2P1-y2 with Eg2 and anti-reflection coating on the face with Eg3, to which Eg1 < Eg2 < Eg0 < Eg3 , characterized by the fact that the p-n transition is formed into the frontal layer in the close proximity to the heteroboundary with the active layer, which is executed with the i- conductance type, and the thickness of the frontal layer is more than the diffusion length of the unbasic charge carriers, generated on the photodiode face.The technical result of the invention consists in the fact that at the reverse displacement the space charge layer is dilated into the active layer, dividing the generated charge carriers into it.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MD96-0338A MD876G2 (en) | 1996-11-20 | 1996-11-20 | Selective photodiode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MD96-0338A MD876G2 (en) | 1996-11-20 | 1996-11-20 | Selective photodiode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| MD876F1 MD876F1 (en) | 1997-11-30 |
| MD876G2 true MD876G2 (en) | 1998-08-31 |
Family
ID=19738916
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MD96-0338A MD876G2 (en) | 1996-11-20 | 1996-11-20 | Selective photodiode |
Country Status (1)
| Country | Link |
|---|---|
| MD (1) | MD876G2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD2413G2 (en) * | 2003-09-16 | 2004-10-31 | Технический университет Молдовы | Selective photodiode with modulated sensibility |
-
1996
- 1996-11-20 MD MD96-0338A patent/MD876G2/en active IP Right Grant
Non-Patent Citations (5)
| Title |
|---|
| Appl. Phys. Lett, nr. 19, v. 60, 1992, I. Grave, A. Shakouri, N. Kuze, A. Yariv, "Voltage-controlled tunable GaAs/AlGaAs multistack quantum well infra-red detector", p. 2362-2364. * |
| Documentele conferinţei "Cercetări în optoelectronică", 1994, Bucureşti, V. Dorogan, V. Brânzari, A. Snigur, G. Corotcencov, V. Coseac, "Aspecte tehnologice în confecţionarea fotodiodelor selective optimizate pentru ( = 1,06 (m", p. 260-266. * |
| Electron. Lett. nr. 28, v. 28, 1992, V. Berger, N. Voldjdani. "Quantum well infra-red photodetector response controlled by very low power visible source", p. 1980-1981. * |
| Electrotehn. electron. şi automat. Autom. şi electron., nr. 2, v. 36, 1992, Rusu Emil, Nan Stelian, Purica Munizer, Budeanu Elena, Cobzarenco Vasile, "Fotodiodă PIN pe InGaAs/InP pentru detecţia radiaţiei de 1,3-1,6 (m", p. 69-71. * |
| Solid-State Electron, nr. 7, v. 38, 1995, Ho Wen-Jeng, Dai Ting-Arn, Chuang Zuon-Ming, Lin Wei, Tu Yuan-Kuang, Wu Meng-Chyi, "InGaAs PIN photodiodes on semiinsulating InP substrates with bandwidth exceeding 14 Ghz", p. 1295-1298. * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD2413G2 (en) * | 2003-09-16 | 2004-10-31 | Технический университет Молдовы | Selective photodiode with modulated sensibility |
Also Published As
| Publication number | Publication date |
|---|---|
| MD876F1 (en) | 1997-11-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FG3A | Granted patent for invention | ||
| IF99 | Valid patent on 19990615 |
Free format text: EXPIRES: 20161120 |