MD2413G2 - Selective photodiode with modulated sensibility - Google Patents
Selective photodiode with modulated sensibilityInfo
- Publication number
- MD2413G2 MD2413G2 MDA20030225A MD20030225A MD2413G2 MD 2413 G2 MD2413 G2 MD 2413G2 MD A20030225 A MDA20030225 A MD A20030225A MD 20030225 A MD20030225 A MD 20030225A MD 2413 G2 MD2413 G2 MD 2413G2
- Authority
- MD
- Moldova
- Prior art keywords
- active layer
- sensibility
- modulated
- layer
- heteroborder
- Prior art date
Links
Abstract
The invention refers to the semiconductor engineering, namely to photodiodes, and may be used in the optoelectronic systems for detection, recording and transduction of optical signals transmitted by optical fibers, atmosphere or other optical media.Summary of the invention consists in that the selective photodiode with modulated sensibility on base of the compounds III-V heterostructure contains a support with the band-gap energy Eg0,onto which there are consecutively applied an active layer having intrinsic conduction with Eg1, a frontal layer with Eg2,the thickness of which is greater than the diffusion length of the minority carriers, wherein on the heteroborder with the active layer it is formed the first p-n junction and an antireflection layer with Eg3, moreover Eg1<Eg2< Eg0< Eg3. On the reverse of the support there are consecutively applied the second active layer having intrinsic conduction with Eg4, the thickness of which is smaller than the diffusion length of the minority carriers, wherein on the heteroborder with the second active layer it is formed a second p-n junction and Eg4<Eg1< Eg2< Eg0<Eg3.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MDA20030225A MD2413G2 (en) | 2003-09-16 | 2003-09-16 | Selective photodiode with modulated sensibility |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MDA20030225A MD2413G2 (en) | 2003-09-16 | 2003-09-16 | Selective photodiode with modulated sensibility |
Publications (2)
Publication Number | Publication Date |
---|---|
MD2413F1 MD2413F1 (en) | 2004-03-31 |
MD2413G2 true MD2413G2 (en) | 2004-10-31 |
Family
ID=32089830
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MDA20030225A MD2413G2 (en) | 2003-09-16 | 2003-09-16 | Selective photodiode with modulated sensibility |
Country Status (1)
Country | Link |
---|---|
MD (1) | MD2413G2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MD4487C1 (en) * | 2016-08-01 | 2018-03-31 | Технический университет Молдовы | Wind turbine with horizontal axis |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MD876G2 (en) * | 1996-11-20 | 1998-08-31 | Валериан ДОРОГАН | Selective photodiode |
-
2003
- 2003-09-16 MD MDA20030225A patent/MD2413G2/en not_active IP Right Cessation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MD876G2 (en) * | 1996-11-20 | 1998-08-31 | Валериан ДОРОГАН | Selective photodiode |
Non-Patent Citations (3)
Title |
---|
Appl. Phys. Lett, nr. 19, v. 60, 1992, I. Grave, A. Shakouri, N. Kuze, A. Yariv, "Voltage-controlled tunable GaAs/AlGaAs multistack quantum well infra-red detector", p. 2362-2364 * |
Documentele conferinţei " Cercetări în optoelectronică", 1994, Bucureşti, V. Dorogan, V. Brânzari, A. Snigur, G. Corotcencov, V. Ceseac. Aspecte tehnologice în confecţionarea fotodiodelor selective optimizate pentru ((1,06(m, p. 260-266 * |
Solid-State Electron, nr. 7, v. 38, 1995, ho0 Wen-Jeng, Dai Ting-Arn, Chuang Zuon-Ming, Lin Wei, Tu Yuan-Kuang, Wu Meng Chyi, "InGaAs PIN photodiodeson semiinsulating InP substrates with bandwidth exceeding 14 Ghz", p. 1295-1298 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MD4487C1 (en) * | 2016-08-01 | 2018-03-31 | Технический университет Молдовы | Wind turbine with horizontal axis |
Also Published As
Publication number | Publication date |
---|---|
MD2413F1 (en) | 2004-03-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ATE412253T1 (en) | SEMICONDUCTOR COMPONENT BASED ON A GROUP III NITRIDE COMPOUND WITH MULTIQUANTUM POT | |
IL196477A0 (en) | Method of fabricating semiconductor devices on a group iv substrate with controlled interface properties and diffusion tails | |
GB0719554D0 (en) | semiconductor optoelectronic devices and methods for making semiconductor optoelectronic devices | |
WO2007001295A3 (en) | Quantum dot based optoelectronic device and method of making same | |
WO2007089222A3 (en) | Heterojunction photodiode | |
WO2011155230A1 (en) | Light receiving element array | |
WO2010062644A3 (en) | Vertical group iii-v nanowires on si, heterostructures, flexible arrays and fabrication | |
EP1551060A4 (en) | Photodiode array and method for manufacturing same | |
JPS54101688A (en) | Optical semiconductor device | |
JPH03156980A (en) | Photodetector | |
NO20011497L (en) | High-dipped p-type contact for a front-lit, fast photo diode | |
MD2413G2 (en) | Selective photodiode with modulated sensibility | |
JP4861388B2 (en) | Avalanche photodiode | |
EP1463123A3 (en) | Light receiving element and method of manufacturing the same | |
EP3965170A3 (en) | Systems, methods, and devices for reducing optical and electrical crosstalk in photodiodes | |
CN202405297U (en) | Backlight PIN photodiode | |
WO2001037383A3 (en) | Group iii-nitride semiconductor structures with reduced phase separation | |
WO2009011310A1 (en) | Display device and method for manufacturing the same | |
MD876G2 (en) | Selective photodiode | |
Joshi | Developments in high performance photodiodes | |
JPS6334980A (en) | Photovoltaic generating element | |
KR970067948A (en) | How to make p-i-n FET | |
JPS6237979A (en) | Light emitting and receiving integrated element | |
KR101557366B1 (en) | Photoelectric conversion device | |
KR970054544A (en) | Avalanche Photodiode and Manufacturing Method Thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
KA4A | Patent for invention lapsed due to non-payment of fees (with right of restoration) | ||
MM4A | Patent for invention definitely lapsed due to non-payment of fees |