MD2413G2 - Selective photodiode with modulated sensibility - Google Patents

Selective photodiode with modulated sensibility

Info

Publication number
MD2413G2
MD2413G2 MDA20030225A MD20030225A MD2413G2 MD 2413 G2 MD2413 G2 MD 2413G2 MD A20030225 A MDA20030225 A MD A20030225A MD 20030225 A MD20030225 A MD 20030225A MD 2413 G2 MD2413 G2 MD 2413G2
Authority
MD
Moldova
Prior art keywords
active layer
sensibility
modulated
layer
heteroborder
Prior art date
Application number
MDA20030225A
Other languages
Romanian (ro)
Russian (ru)
Other versions
MD2413F1 (en
Inventor
Валериан ДОРОГАН
Татьяна ВИЕРУ
Андрей ДОРОГАН
Станислав ВИЕРУ
Original Assignee
Технический университет Молдовы
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Технический университет Молдовы filed Critical Технический университет Молдовы
Priority to MDA20030225A priority Critical patent/MD2413G2/en
Publication of MD2413F1 publication Critical patent/MD2413F1/en
Publication of MD2413G2 publication Critical patent/MD2413G2/en

Links

Abstract

The invention refers to the semiconductor engineering, namely to photodiodes, and may be used in the optoelectronic systems for detection, recording and transduction of optical signals transmitted by optical fibers, atmosphere or other optical media.Summary of the invention consists in that the selective photodiode with modulated sensibility on base of the compounds III-V heterostructure contains a support with the band-gap energy Eg0,onto which there are consecutively applied an active layer having intrinsic conduction with Eg1, a frontal layer with Eg2,the thickness of which is greater than the diffusion length of the minority carriers, wherein on the heteroborder with the active layer it is formed the first p-n junction and an antireflection layer with Eg3, moreover Eg1<Eg2< Eg0< Eg3. On the reverse of the support there are consecutively applied the second active layer having intrinsic conduction with Eg4, the thickness of which is smaller than the diffusion length of the minority carriers, wherein on the heteroborder with the second active layer it is formed a second p-n junction and Eg4<Eg1< Eg2< Eg0<Eg3.
MDA20030225A 2003-09-16 2003-09-16 Selective photodiode with modulated sensibility MD2413G2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20030225A MD2413G2 (en) 2003-09-16 2003-09-16 Selective photodiode with modulated sensibility

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20030225A MD2413G2 (en) 2003-09-16 2003-09-16 Selective photodiode with modulated sensibility

Publications (2)

Publication Number Publication Date
MD2413F1 MD2413F1 (en) 2004-03-31
MD2413G2 true MD2413G2 (en) 2004-10-31

Family

ID=32089830

Family Applications (1)

Application Number Title Priority Date Filing Date
MDA20030225A MD2413G2 (en) 2003-09-16 2003-09-16 Selective photodiode with modulated sensibility

Country Status (1)

Country Link
MD (1) MD2413G2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD4487C1 (en) * 2016-08-01 2018-03-31 Технический университет Молдовы Wind turbine with horizontal axis

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD876G2 (en) * 1996-11-20 1998-08-31 Валериан ДОРОГАН Selective photodiode

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD876G2 (en) * 1996-11-20 1998-08-31 Валериан ДОРОГАН Selective photodiode

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
Appl. Phys. Lett, nr. 19, v. 60, 1992, I. Grave, A. Shakouri, N. Kuze, A. Yariv, "Voltage-controlled tunable GaAs/AlGaAs multistack quantum well infra-red detector", p. 2362-2364 *
Documentele conferinţei " Cercetări în optoelectronică", 1994, Bucureşti, V. Dorogan, V. Brânzari, A. Snigur, G. Corotcencov, V. Ceseac. Aspecte tehnologice în confecţionarea fotodiodelor selective optimizate pentru ((1,06(m, p. 260-266 *
Solid-State Electron, nr. 7, v. 38, 1995, ho0 Wen-Jeng, Dai Ting-Arn, Chuang Zuon-Ming, Lin Wei, Tu Yuan-Kuang, Wu Meng Chyi, "InGaAs PIN photodiodeson semiinsulating InP substrates with bandwidth exceeding 14 Ghz", p. 1295-1298 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD4487C1 (en) * 2016-08-01 2018-03-31 Технический университет Молдовы Wind turbine with horizontal axis

Also Published As

Publication number Publication date
MD2413F1 (en) 2004-03-31

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Legal Events

Date Code Title Description
KA4A Patent for invention lapsed due to non-payment of fees (with right of restoration)
MM4A Patent for invention definitely lapsed due to non-payment of fees