CN202405297U - Backlight PIN photodiode - Google Patents
Backlight PIN photodiode Download PDFInfo
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- CN202405297U CN202405297U CN2011204223693U CN201120422369U CN202405297U CN 202405297 U CN202405297 U CN 202405297U CN 2011204223693 U CN2011204223693 U CN 2011204223693U CN 201120422369 U CN201120422369 U CN 201120422369U CN 202405297 U CN202405297 U CN 202405297U
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- pin photodiode
- backlight
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- doping
- rho
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Abstract
The utility model discloses a backlight PIN photodiode, comprising an n type doping InP buffer layer, an unintentional doping InGaAs absorbing layer, an unintentional doping InP cap layer and an unintentional doping InGaAs ohmic contact layer which successively epitaxially grow on an n type doping InP substrate, realizes Zn dispersion based on an MOCVD epitaxial mode and performs rho type doping on the InGaAs ohmic contact layer and the InP cap layer. A rho type electrode spurts titanium, platinum and gold through a sputtering mode and expands inward from a PN dispersion surface to cover a rho type doping region. The backlight PIN photodiode effectively reduces lasing diode back luminous intensity received by an unintentional doping area, greatly reduces the photon-generated carrier quantity generated by a rho-n interface non-depletion region, minimizes time-delay caused by photoelectric current generated by a rho-n junction interface unintentional doping region and effectively restrains the tailing phenomenon of backlight PIN photodiode response current when a laser stops glowing in Tx-SD application.
Description
Technical field
The utility model relates to the PIN photodiode chip of monitoring laser optical diode usefulness backlight in a kind of optical communication system, relate in particular to a kind of Tx-SD of inhibition use in laser stop the PIN photodiode chip backlight of the conditions of streaking of luminous back PIN photodiode response current backlight.
Background technology
Radiated element in the optical communication system is mainly laser diode, and laser diode is the chip that the signal of telecommunication is converted into light signal, and the photoelectric current that the front end light output of laser diode relies on PIN photodiode chip backlight to produce is monitored and adjusted.At present, common PIN photodiode chip backlight can satisfy the requirement of most optical communication system.But in some special application scenarios, like EPON, the emission of GPON burst type pattern, PIN photodiode backlight must have impulse response fast, and after requirement emission light signal ended, the photoelectric current of PIN diode backlight must end in 100ns.But; Planar diffusion type PIN photodiode response current all has certain " hangover " (Slow Tail) phenomenon; Therefore; After light emission signal stopped, the response current of PIN photodiode backlight will postpone just can disappear behind 300～2000ns, caused the photoemissive Tx-SD signal of burst mode " hangover " phenomenon to occur.
As depicted in figs. 1 and 2; Unglazed conversion conditions of streaking with the PIN photodiode chip backlight; Be because the laser diode back side illuminated incides the non-active region of monitoring optical power with the PIN photodiode chip, cause non-depletion region photo-generated carrier generation diffusion motion.The diffusion motion Mean Speed will be much smaller than the drift motion Mean Speed of depletion region photo-generated carrier; Therefore cause the hangover of impulse response signal; Back light detector response current trailing edge was slow when particularly luminous power was turn-offed; Be during Tx-SD uses laser stop luminous after, the conditions of streaking of PIN photodiode response current backlight.Line segment 8 shows that laser diode digital signal trailing edge responds deadline, and line segment 9 is that PIN photodiode pilot signal trailing edge backlight responds deadline.
The utility model content
In view of this, the technical problem that the utility model will solve is to provide a kind of PIN photodiode backlight, effectively suppress Tx-SD use in laser stop luminous after, the conditions of streaking of response current backlight with PIN photoelectric diode chip.
For solving the problems of the technologies described above; The technical scheme of the utility model is achieved in that a kind of PIN photodiode backlight; InP resilient coating, involuntary doping InGaAs absorbed layer, involuntary doping InP cap layer, involuntary doping InGaAs ohmic contact layer that the epitaxial growth n type successively of being included on the InP substrate that the n type mixes mixes; Realize the Zn diffusion based on the MOCVD extensional mode; InGaAs ohmic contact layer and InP cap layer are carried out the doping of p type, and p type electrode is through mode sputtered titanium, platinum, the gold of sputter, and said p type electrode covers p type doped region by the PN diffused junction towards interior expansion.
Further, said PN diffused junction is 20 ~ 30cm towards the length of interior expansion.
Further, cover involuntary doped region by the PN diffused junction towards outer expansion.
Further, the abducent length of said PN diffused junction face is 20 ~ 40um.
Further, saidly process through peeling off mode through p type electrode.
The technique effect that the utility model reaches is following: because the utility model PIN photodiode chip backlight; On the basis of common PIN photodiode chip design backlight; P type electrode is covered p type doped region by the PN diffused junction towards interior expansion 20 ~ 30um, cover involuntary doped region towards outer expansion 20 ~ 40um by the PN diffused junction.Because Au layer reflecting effect; Effectively reduce the laser diode back side illuminated intensity that involuntary doped region can receive; Reduced the photo-generated carrier quantity that the non-depletion region in p-n interface produces largely; The time-delay that has reduced the involuntary doped region in p-n junction interface to produce photoelectric current and caused has effectively suppressed the conditions of streaking that laser during Tx-SD uses stops luminous back PIN photodiode response current backlight.
Description of drawings
The upward view of the PIN photodiode chip common backlight of Fig. 1 prior art;
The Tx-SD waveform of the PIN photodiode chip common backlight of Fig. 2 prior art;
The structural representation of Fig. 3 the utility model PIN photodiode chip backlight;
The upward view of Fig. 4 the utility model PIN photodiode chip backlight;
The Tx-SD waveform of Fig. 5 the utility model PIN photodiode chip backlight.
Embodiment
Describe the utility model most preferred embodiment in detail below in conjunction with accompanying drawing.
As shown in Figure 3; Structure for the utility model PIN photodiode chip backlight; Its epitaxial structure is included in n type InP resilient coating 2, involuntary doping InGaAs absorbed layer 3, involuntary doping InP cap layer 4, the involuntary doping InGaAs ohmic contact layer 5 that epitaxial growth n type successively mixes that mix on the InP substrate 1 of (impurity is S); Utilization realizes the Zn diffusion based on the mode of MOCVD epitaxial system; InGaAs ohmic contact layer 5 and InP cap layer 4 are carried out the p type mix, mode sputtered titanium, platinum, the gold of the sputter of p type electrodes use, p type electrode covers p type doped region 6 by the PN diffused junction towards interior expansion 20 ~ 30um; Cover involuntary doped region 7 by the PN diffused junction towards outer expansion 20 ~ 40um, adopt the mode of peeling off to form p type electrode (like Fig. 4).
Because the utility model PIN photodiode chip backlight; On the basis of common PIN photodiode chip design backlight; P type electrode is covered p type doped region by the PN diffused junction towards interior expansion 20 ~ 30um, cover involuntary doped region towards outer expansion 20 ~ 40um by the PN diffused junction.Because Au layer reflecting effect; Effectively reduce the laser diode back side illuminated intensity that involuntary doped region can receive; Reduced the photo-generated carrier quantity that the non-depletion region in p-n interface produces largely; The time-delay that has reduced the involuntary doped region generation photoelectric current in p-n junction interface and caused; Effectively suppressed Tx-SD use in laser stop the conditions of streaking (like Fig. 5) of luminous back PIN photodiode response current backlight, line segment 10 shows laser diode digital signal trailing edges response deadline, line segment 11 be that the utility model PIN photodiode pilot signal backlight trailing edge responds deadline; Response time between the two foreshortens in the 50ns, satisfies EPON, the requirement of GPON burst type module application.
The above is merely the preferred embodiment of the utility model, is not the protection range that is used to limit the utility model.
Claims (5)
1. PIN photodiode backlight; InP resilient coating, involuntary doping InGaAs absorbed layer, involuntary doping InP cap layer, involuntary doping InGaAs ohmic contact layer that the epitaxial growth n type successively of being included on the InP substrate that the n type mixes mixes; P type electrode is through mode sputtered titanium, platinum, the gold of sputter; It is characterized in that said p type electrode covers p type doped region by the PN diffused junction towards interior expansion.
2. PIN photodiode backlight as claimed in claim 1 is characterized in that, said PN diffused junction is 20 ~ 30cm towards the length of interior expansion.
3. PIN photodiode backlight as claimed in claim 1 is characterized in that, covers involuntary doped region by the PN diffused junction towards outer expansion.
4. PIN photodiode backlight as claimed in claim 3 is characterized in that, the abducent length of said PN diffused junction face is 20 ~ 40um.
5. PIN photodiode backlight as claimed in claim 1 is characterized in that, said p type electrode is processed through peeling off mode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011204223693U CN202405297U (en) | 2011-10-31 | 2011-10-31 | Backlight PIN photodiode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011204223693U CN202405297U (en) | 2011-10-31 | 2011-10-31 | Backlight PIN photodiode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202405297U true CN202405297U (en) | 2012-08-29 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011204223693U Expired - Lifetime CN202405297U (en) | 2011-10-31 | 2011-10-31 | Backlight PIN photodiode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202405297U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103811580A (en) * | 2014-03-05 | 2014-05-21 | 中国科学院半导体研究所 | InGaAs infrared photodetector |
| CN114664958A (en) * | 2022-03-25 | 2022-06-24 | 福建中科光芯光电科技有限公司 | InGaAs backlight monitoring detector with same-side electrode and manufacturing method thereof |
-
2011
- 2011-10-31 CN CN2011204223693U patent/CN202405297U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103811580A (en) * | 2014-03-05 | 2014-05-21 | 中国科学院半导体研究所 | InGaAs infrared photodetector |
| CN114664958A (en) * | 2022-03-25 | 2022-06-24 | 福建中科光芯光电科技有限公司 | InGaAs backlight monitoring detector with same-side electrode and manufacturing method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20120829 |
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| CX01 | Expiry of patent term |