MD2562G2 - Procedeu de obţinere a peliculelor de polisulfuri - Google Patents

Procedeu de obţinere a peliculelor de polisulfuri

Info

Publication number
MD2562G2
MD2562G2 MDA20020071A MD20020071A MD2562G2 MD 2562 G2 MD2562 G2 MD 2562G2 MD A20020071 A MDA20020071 A MD A20020071A MD 20020071 A MD20020071 A MD 20020071A MD 2562 G2 MD2562 G2 MD 2562G2
Authority
MD
Moldova
Prior art keywords
polysulphide
treatment
support
sulphidic
temperature
Prior art date
Application number
MDA20020071A
Other languages
English (en)
Russian (ru)
Other versions
MD2562F2 (ro
MD20020071A (ro
Inventor
Василе ЖИТАРЬ
Степан МУНТЯН
Ефим АРАМЭ
Original Assignee
Институт Прикладной Физики Академии Наук Молдовы
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Институт Прикладной Физики Академии Наук Молдовы filed Critical Институт Прикладной Физики Академии Наук Молдовы
Priority to MDA20020071A priority Critical patent/MD2562G2/ro
Publication of MD20020071A publication Critical patent/MD20020071A/ro
Publication of MD2562F2 publication Critical patent/MD2562F2/ro
Publication of MD2562G2 publication Critical patent/MD2562G2/ro

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

Invenţia se referă la electronică, în particular la tehnologia semiconductoarelor.Procedeul de obţinere a peliculelor de polisulfuri include depunerea compusului sulfidic pe un suport şi prelucrarea termică ulterioară. Noutatea constă in aceea că suportul se prelucrează preliminar cu soluţie de ZnCl2, se usucă la temperatura de 373 K, compusul sulfidic ZnxIn2S3+x(x = 1, 2, 3, 5) se amestecă cu soluţie de ZnCl2, iar prelucrarea termică se efectuează în condiţia T·t = (6,3 - 8,5)103 grad·h, unde:T - temperatura de prelucrare,t - timpul de prelucrare.
MDA20020071A 2002-02-13 2002-02-13 Procedeu de obţinere a peliculelor de polisulfuri MD2562G2 (ro)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20020071A MD2562G2 (ro) 2002-02-13 2002-02-13 Procedeu de obţinere a peliculelor de polisulfuri

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20020071A MD2562G2 (ro) 2002-02-13 2002-02-13 Procedeu de obţinere a peliculelor de polisulfuri

Publications (3)

Publication Number Publication Date
MD20020071A MD20020071A (ro) 2003-12-31
MD2562F2 MD2562F2 (ro) 2004-09-30
MD2562G2 true MD2562G2 (ro) 2005-05-31

Family

ID=32026170

Family Applications (1)

Application Number Title Priority Date Filing Date
MDA20020071A MD2562G2 (ro) 2002-02-13 2002-02-13 Procedeu de obţinere a peliculelor de polisulfuri

Country Status (1)

Country Link
MD (1) MD2562G2 (ro)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD193Z (ro) * 2009-06-04 2010-11-30 Институт Прикладной Физики Академии Наук Молдовы Procedeu de obţinere a peliculei polisulfidice

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD1497G2 (ro) * 1999-05-24 2001-03-31 Институт Прикладной Физики Академии Наук Молдовы Celulă solară fotoelectrochimică

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD1497G2 (ro) * 1999-05-24 2001-03-31 Институт Прикладной Физики Академии Наук Молдовы Celulă solară fotoelectrochimică

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
A., Sprincean A., Ţiuleanu I. Celulă solară fotoelectrochimică. Brevet nr.1497, Bopi, nr. 6, AGEPI, 2000. *
В.Ф., Молдовян Н.А., Радауцан С.И., райлян В.Я. Детектор ультрафиолетого излучения. Авт.св.СССР №730226, 1979 г. *
Кобзаренко В. Н., Доника Ф.Г., Житарь В. Ф., Радауцан С.И. Высокоомные фоточувствительные пленки ZnIn2S4. ДАН СССР, 235, 1977 с. 1297 - 1299 *
Молдовян Н.А., Циуляну И.И., Радауцан С.И., Житарь В.Ф., Райлян В.Я. Способ изготовления фотоприемника ультрафиолетового излучения. Авт. Св. СССР №1378717, 1987. *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD193Z (ro) * 2009-06-04 2010-11-30 Институт Прикладной Физики Академии Наук Молдовы Procedeu de obţinere a peliculei polisulfidice

Also Published As

Publication number Publication date
MD2562F2 (ro) 2004-09-30
MD20020071A (ro) 2003-12-31

Similar Documents

Publication Publication Date Title
TW328631B (en) Susceptor, apparatus of heat-treating semiconductor wafer, and method of heat-treating the same
DE69434773D1 (de) Vorrichtung zur schnellen thermischen Behandlung zur Herstellung von Halbleiterwafern
WO2003009346A3 (en) Processing system
EP1453083A4 (en) INSULATING FILM NITRIDING PROCESS, SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME, AND SURFACE TREATING DEVICE AND METHOD
TW200604394A (en) Group III nitride crystal substrate and its manufacturing method, and group III nitride semiconductor device
TW200704834A (en) Silicon wafer and manufacturing method for same
TW200741821A (en) Method for manufacturing compound material wafers and method for recycling a used donor substrate
TW430866B (en) Thermal treatment apparatus
TW200725742A (en) Annealed wafer and manufacturing method of annealed wafer
HK1035748A1 (en) High purity gallium for preparation of compound semiconductor, and apparatus for purifying the same
JPS5514839A (en) Treating method for ion nitriding
TW200518221A (en) Method for forming film, method for manufacturing semiconductor device, semiconductor device and substrate treatment system
EP0390672A3 (en) Method for heat process of silicon
ZA907704B (en) Process for nitrocarburizing components made from steel
WO2004057653A3 (en) A method and apparatus for forming a high quality low temperature silicon nitride layer
MD2562G2 (ro) Procedeu de obţinere a peliculelor de polisulfuri
JPS5390033A (en) Heat treatment equipment
SG83159A1 (en) Process for the wet chemical treatment of semiconductor wafers
JPS5771137A (en) Manufacture of semiconductor device
SG120893A1 (en) Process and apparatus for heat-treating ii-vi compound semiconductors and semiconductor heat-treatedby the process
JPS52139373A (en) Treating method for compound semiconductor
JPS5265686A (en) Production of mos semiconductor device
GB2008084A (en) Improvements in or relating to the growth of semiconductor compounds
JPS5375862A (en) Surface stabilization method of semiconductor
JPS53108373A (en) Manufacture for semiconductor device

Legal Events

Date Code Title Description
KA4A Patent for invention lapsed due to non-payment of fees (with right of restoration)
MM4A Patent for invention definitely lapsed due to non-payment of fees