MD2562G2 - Procedeu de obţinere a peliculelor de polisulfuri - Google Patents
Procedeu de obţinere a peliculelor de polisulfuriInfo
- Publication number
- MD2562G2 MD2562G2 MDA20020071A MD20020071A MD2562G2 MD 2562 G2 MD2562 G2 MD 2562G2 MD A20020071 A MDA20020071 A MD A20020071A MD 20020071 A MD20020071 A MD 20020071A MD 2562 G2 MD2562 G2 MD 2562G2
- Authority
- MD
- Moldova
- Prior art keywords
- polysulphide
- treatment
- support
- sulphidic
- temperature
- Prior art date
Links
Landscapes
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Invenţia se referă la electronică, în particular la tehnologia semiconductoarelor.Procedeul de obţinere a peliculelor de polisulfuri include depunerea compusului sulfidic pe un suport şi prelucrarea termică ulterioară. Noutatea constă in aceea că suportul se prelucrează preliminar cu soluţie de ZnCl2, se usucă la temperatura de 373 K, compusul sulfidic ZnxIn2S3+x(x = 1, 2, 3, 5) se amestecă cu soluţie de ZnCl2, iar prelucrarea termică se efectuează în condiţia T·t = (6,3 - 8,5)103 grad·h, unde:T - temperatura de prelucrare,t - timpul de prelucrare.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MDA20020071A MD2562G2 (ro) | 2002-02-13 | 2002-02-13 | Procedeu de obţinere a peliculelor de polisulfuri |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MDA20020071A MD2562G2 (ro) | 2002-02-13 | 2002-02-13 | Procedeu de obţinere a peliculelor de polisulfuri |
Publications (3)
Publication Number | Publication Date |
---|---|
MD20020071A MD20020071A (ro) | 2003-12-31 |
MD2562F2 MD2562F2 (ro) | 2004-09-30 |
MD2562G2 true MD2562G2 (ro) | 2005-05-31 |
Family
ID=32026170
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MDA20020071A MD2562G2 (ro) | 2002-02-13 | 2002-02-13 | Procedeu de obţinere a peliculelor de polisulfuri |
Country Status (1)
Country | Link |
---|---|
MD (1) | MD2562G2 (ro) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MD193Z (ro) * | 2009-06-04 | 2010-11-30 | Институт Прикладной Физики Академии Наук Молдовы | Procedeu de obţinere a peliculei polisulfidice |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MD1497G2 (ro) * | 1999-05-24 | 2001-03-31 | Институт Прикладной Физики Академии Наук Молдовы | Celulă solară fotoelectrochimică |
-
2002
- 2002-02-13 MD MDA20020071A patent/MD2562G2/ro not_active IP Right Cessation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MD1497G2 (ro) * | 1999-05-24 | 2001-03-31 | Институт Прикладной Физики Академии Наук Молдовы | Celulă solară fotoelectrochimică |
Non-Patent Citations (4)
Title |
---|
A., Sprincean A., Ţiuleanu I. Celulă solară fotoelectrochimică. Brevet nr.1497, Bopi, nr. 6, AGEPI, 2000. * |
В.Ф., Молдовян Н.А., Радауцан С.И., райлян В.Я. Детектор ультрафиолетого излучения. Авт.св.СССР №730226, 1979 г. * |
Кобзаренко В. Н., Доника Ф.Г., Житарь В. Ф., Радауцан С.И. Высокоомные фоточувствительные пленки ZnIn2S4. ДАН СССР, 235, 1977 с. 1297 - 1299 * |
Молдовян Н.А., Циуляну И.И., Радауцан С.И., Житарь В.Ф., Райлян В.Я. Способ изготовления фотоприемника ультрафиолетового излучения. Авт. Св. СССР №1378717, 1987. * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MD193Z (ro) * | 2009-06-04 | 2010-11-30 | Институт Прикладной Физики Академии Наук Молдовы | Procedeu de obţinere a peliculei polisulfidice |
Also Published As
Publication number | Publication date |
---|---|
MD2562F2 (ro) | 2004-09-30 |
MD20020071A (ro) | 2003-12-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW328631B (en) | Susceptor, apparatus of heat-treating semiconductor wafer, and method of heat-treating the same | |
DE69434773D1 (de) | Vorrichtung zur schnellen thermischen Behandlung zur Herstellung von Halbleiterwafern | |
WO2003009346A3 (en) | Processing system | |
EP1453083A4 (en) | INSULATING FILM NITRIDING PROCESS, SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME, AND SURFACE TREATING DEVICE AND METHOD | |
TW200604394A (en) | Group III nitride crystal substrate and its manufacturing method, and group III nitride semiconductor device | |
TW200704834A (en) | Silicon wafer and manufacturing method for same | |
TW200741821A (en) | Method for manufacturing compound material wafers and method for recycling a used donor substrate | |
TW430866B (en) | Thermal treatment apparatus | |
TW200725742A (en) | Annealed wafer and manufacturing method of annealed wafer | |
HK1035748A1 (en) | High purity gallium for preparation of compound semiconductor, and apparatus for purifying the same | |
JPS5514839A (en) | Treating method for ion nitriding | |
TW200518221A (en) | Method for forming film, method for manufacturing semiconductor device, semiconductor device and substrate treatment system | |
EP0390672A3 (en) | Method for heat process of silicon | |
ZA907704B (en) | Process for nitrocarburizing components made from steel | |
WO2004057653A3 (en) | A method and apparatus for forming a high quality low temperature silicon nitride layer | |
MD2562G2 (ro) | Procedeu de obţinere a peliculelor de polisulfuri | |
JPS5390033A (en) | Heat treatment equipment | |
SG83159A1 (en) | Process for the wet chemical treatment of semiconductor wafers | |
JPS5771137A (en) | Manufacture of semiconductor device | |
SG120893A1 (en) | Process and apparatus for heat-treating ii-vi compound semiconductors and semiconductor heat-treatedby the process | |
JPS52139373A (en) | Treating method for compound semiconductor | |
JPS5265686A (en) | Production of mos semiconductor device | |
GB2008084A (en) | Improvements in or relating to the growth of semiconductor compounds | |
JPS5375862A (en) | Surface stabilization method of semiconductor | |
JPS53108373A (en) | Manufacture for semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
KA4A | Patent for invention lapsed due to non-payment of fees (with right of restoration) | ||
MM4A | Patent for invention definitely lapsed due to non-payment of fees |