MD173Y - Process for the manufacture of bifilar microwire - Google Patents
Process for the manufacture of bifilar microwire Download PDFInfo
- Publication number
- MD173Y MD173Y MDS20090233A MDS20090233A MD173Y MD 173 Y MD173 Y MD 173Y MD S20090233 A MDS20090233 A MD S20090233A MD S20090233 A MDS20090233 A MD S20090233A MD 173 Y MD173 Y MD 173Y
- Authority
- MD
- Moldova
- Prior art keywords
- bifilar
- semi
- metallic
- vials
- microconductor
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 11
- 239000011521 glass Substances 0.000 claims abstract description 9
- 239000011265 semifinished product Substances 0.000 claims abstract description 9
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 238000010438 heat treatment Methods 0.000 claims abstract description 7
- 239000008187 granular material Substances 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 2
- XTKDAFGWCDAMPY-UHFFFAOYSA-N azaperone Chemical compound C1=CC(F)=CC=C1C(=O)CCCN1CCN(C=2N=CC=CC=2)CC1 XTKDAFGWCDAMPY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
Landscapes
- Glass Compositions (AREA)
Abstract
Inventia se refera la electronica, in particular la un procedeu de confectionare a microconductoarelor bifilare. Procedeul de confectionare a microconductorului bifilar include confectionarea prealabila a semifabricatului, care contine doua fiole vidate de sticla, amplasate paralel una fata de alta, contactand mecanic intre ele, spatiul fiolelor vidate fiind umplut cu preforme din material metalic, semimetalic sau semiconductor, incalzirea ulterioara a semifabricatului intr-un cuptor cu rezistenta si extinderea lui.The invention relates to electronics, in particular to a process for making two-wire microconductors. The process of making the bifilar microconductor includes the prior manufacture of the semi-finished product, which contains two glass vials, placed parallel to each other, mechanically contacting each other, the space of the vacuum vials being filled with preforms of metallic, semimetal or semiconductor material, heating the heating. of the blank in an oven with its resistance and extension.
Description
Invenţia se referă la electronică, în particular la un procedeu de confecţionare a microconductoarelor bifilare. The invention relates to electronics, in particular to a process for manufacturing bifilar microconductors.
Este cunoscut un procedeu de obţinere a microconductoarelor coaxiale din materiale metalice, semimetalice sau semiconductoare prin metoda Ulitovski, care constă în încălzirea semifabricatului care, la rândul său, încălzeşte fiola de sticlă, şi formarea microconductorului [1]. A process for obtaining coaxial microconductors from metallic, semi-metallic or semiconductor materials is known by the Ulitovski method, which consists of heating the semi-finished product which, in turn, heats the glass vial, and forming the microconductor [1].
Mai este cunoscut un procedeu de trefilare a microconductorului, care include fabricarea prealabilă a semifabricatului, încălzirea lui în procesul trefilării prin cuptorul rezistiv şi formarea microconductorului, totodată semifabricatul conţine două fiole vidate de sticlă, amplasate coaxial, spaţiul inelar dintre ele şi cavitatea fiolei interioare fiind umplute cu şarje din material metalic sau semimetalic, sau semiconductor [2]. There is also a known microconductor drawing process, which includes the preliminary manufacture of the semi-finished product, its heating in the drawing process through the resistive furnace and the formation of the microconductor, at the same time the semi-finished product contains two vacuum glass vials, placed coaxially, the annular space between them and the cavity of the inner vial being filled with charges of metallic or semi-metallic, or semiconductor material [2].
Dezavantajul procedeelor cunoscute constă în complexitatea procesului tehnologic de obţinere a microconductoarelor. The disadvantage of known processes lies in the complexity of the technological process of obtaining microconductors.
Problema pe care o rezolvă invenţia constă în simplificarea procesului tehnologic. The problem that the invention solves consists in simplifying the technological process.
Procedeul de confecţionare a microconductorului bifilar înlătură dezavantajul menţionat mai sus prin aceea că include confecţionarea prealabilă a semifabricatului, care conţine două fiole vidate de sticlă, amplasate paralel una faţă de alta, contactând mecanic între ele, spaţiul fiolelor vidate fiind umplut cu preforme din material metalic, semimetalic sau semiconductor, încălzirea ulterioară a semifabricatului într-un cuptor cu rezistenţă şi extinderea lui. The process for manufacturing the bifilar microconductor eliminates the aforementioned disadvantage by including the preliminary manufacturing of the semi-finished product, which contains two vacuum glass vials, placed parallel to each other, mechanically contacting each other, the space of the vacuum vials being filled with preforms made of metallic, semi-metallic or semiconductor material, the subsequent heating of the semi-finished product in a resistance furnace and its expansion.
Invenţia se explică prin desenele din fig. 1 şi 2, care reprezintă: The invention is explained by the drawings in Fig. 1 and 2, which represent:
- fig. 1, secţiunea transversală a semiconductorului bifilar; - Fig. 1, cross-section of the bifilar semiconductor;
- fig. 2, un segment al firului bifilar. - fig. 2, a segment of the bifilar thread.
Procedeul se realizează în modul următor The procedure is carried out in the following way:
Semifabricatul conţine două fiole vidate de sticlă, amplasate paralel una faţă de alta, care mecanic contactează între ele, spaţiul vidat al cărora este umplut cu şarje din materiale metalice, semimetalice sau semiconductoare. Se iau două ţevi de sticlă cu un capăt lipit cu diametrul interior de 5…6 mm, în care se introduc câteva grame de material metalic, semimetalic sau semiconductor în formă de granule mici. După vidarea până la presiunea de 10-5 tor, ele se lipesc una de alta la ambele capete, cum este arătat în fig. 1. Aici 1 - o fiolă, umplută cu un material granulat 2, şi 3 - o altă fiolă, umplută cu un alt material granulat 4. Fiola dublă obţinută se introduce într-un cuptor cu încălzire rezistivă. Metoda de obţinere a firelor bifilare este similară cu metoda Ulitovski, cu excepţia că în loc de inductorul de frecvenţă înaltă al instalaţiei se montează un cuptor rezistiv, alimentat de curent electric stabilizat. În funcţie de temperatura cuptorului, materialele din ambele fiole se topesc, iar sticla fiolelor se înmoaie. The semi-finished product contains two vacuum glass vials, placed parallel to each other, which mechanically contact each other, the vacuum space of which is filled with charges of metallic, semi-metallic or semiconductor materials. Two glass tubes with a soldered end with an internal diameter of 5…6 mm are taken, into which a few grams of metallic, semi-metallic or semiconductor material in the form of small granules are inserted. After vacuuming to a pressure of 10-5 torr, they are soldered to each other at both ends, as shown in Fig. 1. Here 1 - one vial, filled with a granulated material 2, and 3 - another vial, filled with another granulated material 4. The obtained double vial is placed in a furnace with resistive heating. The method of obtaining bifilar wires is similar to the Ulitovsky method, except that instead of the high-frequency inductor of the installation, a resistive furnace is installed, powered by stabilized electric current. Depending on the oven temperature, the materials in both vials melt and the glass of the vials softens.
Cu ajutorul unui beţişor de sticlă, atingând lipitura de la capătul de jos a fiolelor, o parte din învelişurile ambelor fiole se întinde în formă de două capilare bifilar lipite unul de altul şi umplute cu diferite materiale, pe un dispozitiv special de recepţie în formă de un microconductor bifilar cu două conductoare electrice izolate unul de altul. Using a glass rod, touching the seal at the bottom of the vials, part of the shells of both vials is spread in the form of two bifilar capillaries glued to each other and filled with different materials, onto a special receiving device in the form of a bifilar microconductor with two electrical conductors insulated from each other.
În funcţie de temperatura cuptorului, de vitezele de coborâre a fiolei în cuptor şi de trefilare a microconductorului pe dispozitivul de recepţie, se pot obţine microconductoare bifilare de diferite diametre. Depending on the oven temperature, the speeds of lowering the vial into the oven and drawing the microconductor onto the receiving device, bifilar microconductors of different diameters can be obtained.
În fiola interioară 1 cu diametrul exterior de 4…5 mm s-au introdus 4…5 g de telurură de bismut cu conductibilitatea de tipul n, iar în fiola 3 cu acelaşi diametru s-au introdus câte 4…5 g de telurură de bismut cu conductibilitate de tip p şi n. După vidare din fiola dublă s-au obţinut microconductoare bifilare 1 cu diametre exterioare de 20…60 µm şi cu diametrul electrozilor 2 şi 3 de 10…30 µm în funcţie de regimul tehnologic. În funcţie de cantitatea materialelor, lungimea microconductoarelor variază de la 10 până la 100…200 m. In the inner vial 1 with an outer diameter of 4…5 mm, 4…5 g of bismuth telluride with n-type conductivity were introduced, and in the vial 3 with the same diameter, 4…5 g of bismuth telluride with p- and n-type conductivity were introduced. After vacuuming from the double vial, bifilar microconductors 1 with outer diameters of 20…60 µm and with the diameter of electrodes 2 and 3 of 10…30 µm depending on the technological regime were obtained. Depending on the amount of materials, the length of the microconductors varies from 10 to 100…200 m.
1. Бадинтер Е.Я., Берман Н.Р., Драбенко И.Ф. и др. Литой микропровод и его свойства. Кишинев, Издательство «Штиинца», 1973, с. 318 1. Badinter Е.Я., Berman Н.Р., Drabenko И.Ф. and others Cast microwire and its properties. Chişinău, Издательство «Штиинца», 1973, с. 318
2. MD 2752 C2 2005.03.31 2. MD 2752 C2 2005.03.31
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDS20090233A MD173Z (en) | 2008-07-25 | 2008-07-25 | Process for the manufacture of bifilar microwire |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDS20090233A MD173Z (en) | 2008-07-25 | 2008-07-25 | Process for the manufacture of bifilar microwire |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| MD173Y true MD173Y (en) | 2010-03-31 |
| MD173Z MD173Z (en) | 2010-10-31 |
Family
ID=43568945
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MDS20090233A MD173Z (en) | 2008-07-25 | 2008-07-25 | Process for the manufacture of bifilar microwire |
Country Status (1)
| Country | Link |
|---|---|
| MD (1) | MD173Z (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD753Z (en) * | 2013-07-02 | 2014-10-31 | Институт Прикладной Физики Академии Наук Молдовы | Method for producing microwire contact in glass insulation |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU611258A1 (en) * | 1976-08-06 | 1978-06-15 | Кишиневский Научно-Исследовательский Институт Электроприборостроения Нпо "Микропровод" | Device for automatic control of microwire resistance per meter in a wire-casting installation |
| SU917219A1 (en) * | 1980-01-29 | 1982-03-30 | Кишиневский политехнический институт им.С.Лазо | Device for winding articles from glass-insulated microwire |
| SU1797079A1 (en) * | 1990-11-19 | 1993-02-23 | Samarskij Polt I Im V V Kujbys | Method of measurement of electric values of active resistance, induction and capacitance |
| MD2752C2 (en) * | 2002-03-06 | 2005-12-31 | Международная Лаборатория Сверхпроводимости И Электроники Твёрдого Тела Академии Наук Республики Молдова | Process for coaxial microwire obtaining |
| MD2249G2 (en) * | 2003-02-11 | 2004-02-29 | Технический университет Молдовы | Device for measuring the resistance of the elements from the isolated condcutor in the winding process |
| MD2645G2 (en) * | 2004-07-16 | 2005-08-31 | Технический университет Молдовы | Device for measuring the linear resistance of the insulated wire |
| MD20050179A (en) * | 2005-06-24 | 2008-04-30 | Технический университет Молдовы | Installation for microwire casting from liquid phase |
| MD20050370A (en) * | 2005-12-12 | 2007-08-31 | Технический университет Молдовы | Plant for casting conducting threads from metals in liquid phase |
| MD3216G2 (en) * | 2006-03-21 | 2007-07-31 | Технический университет Молдовы | Device for measuring the linear resistance of the insulated wire |
| MD3463G2 (en) * | 2006-11-14 | 2008-09-30 | Технический университет Молдовы | Device for measuring the resistance of articles of insulated wire in the process of adjustment to value |
| MD3897G2 (en) * | 2007-10-08 | 2010-05-31 | Технический университет Молдовы | Process for measuring the section of an insulated wire in the casting process |
| MD3961G2 (en) * | 2008-01-09 | 2010-04-30 | Технический университет Молдовы | Device for measuring the linear resistance of the glass-insulated wire in the casting process |
| MD3919G2 (en) * | 2008-02-15 | 2009-12-31 | Технический университет Молдовы | Device for measuring the resistance of articles of insulated wire in the process of adjustment to nominal value |
| MD3933G2 (en) * | 2008-07-09 | 2010-01-31 | Технический университет Молдовы | Device for measuring the linear resistance of the insulated wire |
-
2008
- 2008-07-25 MD MDS20090233A patent/MD173Z/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| MD173Z (en) | 2010-10-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| KA4Y | Short-term patent lapsed due to non-payment of fees (with right of restoration) |