KR980006672A - 자발광 표시장치 - Google Patents

자발광 표시장치 Download PDF

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Publication number
KR980006672A
KR980006672A KR1019970025142A KR19970025142A KR980006672A KR 980006672 A KR980006672 A KR 980006672A KR 1019970025142 A KR1019970025142 A KR 1019970025142A KR 19970025142 A KR19970025142 A KR 19970025142A KR 980006672 A KR980006672 A KR 980006672A
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South Korea
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light emitting
self
display device
cladding layer
conductive cladding
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KR1019970025142A
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English (en)
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KR100486803B1 (ko
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아끼라 이시바시
노리까즈 나까야마
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이데이 노부유끼
소니 가부시끼가이샤
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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/3406—Control of illumination source
    • G09G3/3413—Details of control of colour illumination sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/3406—Control of illumination source
    • G09G3/342—Control of illumination source using several illumination sources separately controlled corresponding to different display panel areas, e.g. along one dimension such as lines
    • G09G3/3426—Control of illumination source using several illumination sources separately controlled corresponding to different display panel areas, e.g. along one dimension such as lines the different display panel areas being distributed in two dimensions, e.g. matrix
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
    • H01S5/4093—Red, green and blue [RGB] generated directly by laser action or by a combination of laser action with nonlinear frequency conversion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Abstract

별개의 청색(B), 녹색(G) 및 적색(R) 발광원들을 구비한 자발광 표시 장치에 관한 것으로, 발광원들의 스펙트럼은 각각 상호 실질적으로 중첩하지 않는 프리커서 델타 함수들로서 간주될 정도로 좁은 반 대역폭(30mm 이하)을 가진다. 유한 피크 치들과 극히 좁은 유한 폭들의 스펙트럼을 가진 광원들이 이용되기 때문에, 각 광원에서의 스펙트럼의 형상 변화는 파장 공간으로는 억제되어 오로지 강도 변화만으로 간주될 수 있다.따라서, 각 발광원에 대한 강도를 변화시키는 것만으로 보정하는 것이 가능하게 되어, 색 재생성이 향상되고 시간에 따른 색의 변화가 없게 된다.

Description

자발광 표시장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제5도는 본 발명에 이용되는 프리커서 델타 함수로 간주될 수 있는 RGB 광원들의 발광 스펙트럼을 도시하는 특성도.

Claims (15)

  1. 복수의 발광원(light emission source)들을 포함하되, 상기 발광원들 각각은 실질적으로 상호 중첩하지 않는 스펙트럼 레벨들을 갖는 것을 특징으로하는 자발광 표시 장치(selfluminous display device).
  2. 제1항에 있어서, 적색, 녹색, 및 청색 발광원들을 포함하는 상기 발광원들은 각기 30nm 이하인 스펙트럼 반 대역폭(spectra half band width)을 갖는 것을 특징으로 하는 자발광 표시 장치.
  3. 제1항에 있어서, 적색, 녹색 및 청색 발광원들을 포함하는 상기 발광원들은 각기 반 대역폭이 30nm이하인 프리커서 델타 함수형 스펙트럼(precursor delta function shaped spectra)를 갖는 것을 특징으로 하는 자발광 표시장치.
  4. 제2항에 있어서, 상기 발광원들 중 적어도 하나는 발광 다이오드를 포함하는 것을 특징으로 하는 자발광 표시 장치.
  5. 제4항에 있어서, 상기 발광 다이오드는 면발광형 LED(surface emission type LED)인 것을 특징으로 하는 자발광 표시 장치.
  6. 제4항에 있어서, 발광 다이오드는 Ⅱ-Ⅵ족 화합물 반도체로 이루어진 적어도 제1 도전형의 클래드층(clad layer)과 활성층(active layer) 및 제2 도전형의 클래드 층으로 이루어지는 것을 특징으로 하는 자발광 표시 장치.
  7. 제4항에 있어서, 상기 발광 다이오드는 Ⅲ-Ⅴ족 화합물 반도체로 이루어진 적어도 제1 도전형의 클래드 층과 활성층 및 제2 도전형의 클래드 층으로 이루어지는 것을 특징으로 하는 자발광 표시장치.
  8. 제2항에 있어서, 상기 발광원들 중 적어도 하나는 반도체 레이저인 것을 특징으로 하는 자발광 표시 장치.
  9. 제8항에 있어서, 상기 반도체 레이저는 면 발광형 레이저인 것을 특징으로 하는 자발광 표시 장치.
  10. 제8항에 있어서, 상기 반도체 레이저는 Ⅱ-Ⅵ족 화합물 반도체로 이루어진 적어도 제1 도전형의 클래드 층과 활성층 및 제2 도전형의 클래드 층으로 이루어지는 것을 특징으로 하는 자발광 표시 장치.
  11. 제8항에 있어서, 상기 반도체 레이저는 Ⅲ-Ⅴ족 화합물 반도체로 이루어진 적어도 제1 도전형의 클래드층과 활성층 및 제2 도전형의 클래드 층으로이루어지는 것을 특징으로 하는 자발광 표시 장치.
  12. 제1항에 있어서, 상기 발광원들은 포락 함수(envelope function)의 반 대역폭이 30nm 이하인 스펙트럼을 각각 가진 적색, 녹색 또는 청색 발광들을 가진 레이저들을 포함하는 반도체 레이저들로 이루어지는 것을 특징으로 하는 자발광 표시 장치.
  13. 제12항에 있어서, 상기 반도체 레이저들은 면발광형 레이저들인 것을 특징으로 하는 자발광 표시 장치.
  14. 제12항에 있어서, 상기 반도체 레이저들은 Ⅱ-Ⅵ족 화합물 반도체로 이루어진 적어도 제1 도전형의 클래드 층과 활성층 및 제2 도전형의 클래드 층으로 이루어지는 것을 특징으로 하는 자발광 표시 장치.
  15. 제12항에 있어서, 상기 반도체 레이저들은 Ⅲ-Ⅴ족 화합물 반도체로 이루어진 적어도 제1 도전형의 클래드 층과 활성층 및 제2 도전형의 클래드 층으로 이루어지는 것을 특징으로 하는 자발광 표시 장치.
KR1019970025142A 1996-06-18 1997-06-17 자발광표시장치 KR100486803B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP96-177496 1996-06-18
JP17749696 1996-06-18

Publications (2)

Publication Number Publication Date
KR980006672A true KR980006672A (ko) 1998-03-30
KR100486803B1 KR100486803B1 (ko) 2005-06-16

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JP3378465B2 (ja) * 1997-05-16 2003-02-17 株式会社東芝 発光装置
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JP2001144331A (ja) * 1999-09-02 2001-05-25 Toyoda Gosei Co Ltd 発光装置
JP4116260B2 (ja) * 2001-02-23 2008-07-09 株式会社東芝 半導体発光装置
US6576932B2 (en) * 2001-03-01 2003-06-10 Lumileds Lighting, U.S., Llc Increasing the brightness of III-nitride light emitting devices
JP3946062B2 (ja) * 2002-03-18 2007-07-18 シャープ株式会社 表示装置およびその製造方法
EP1521311A3 (de) * 2003-09-30 2010-09-15 OSRAM Opto Semiconductors GmbH Strahlungsemittierender Halbleiterkörper mit Confinement-Schichten
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JP5016848B2 (ja) * 2006-05-19 2012-09-05 キヤノン株式会社 多原色ディスプレイ
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