KR980005552A

KR980005552A - Method of forming a contact hole in a semiconductor device

Info

Publication number: KR980005552A
Application number: KR1019960024544A
Authority: KR
Inventors: 백현철; 안성환
Original assignee: 김주용; 현대전자산업 주식회사
Priority date: 1996-06-27
Filing date: 1996-06-27
Publication date: 1998-03-30

Abstract

본 발명은 반도체 소자의 콘택홀 형성 방법에 관한 것으로, 보다 구체적으로는 콘택홀을 형성하기 위한 콘택 에칭후에 PET(Post Etch Treament)공정 상태를 감지하는 기술에 관련된 반도체 소자의 콘택홀 형성 방법에 관한 것이다. 본 발명의 반도체 소자의 콘택홀 형성 방법은 콘택 에칭으로 손상된 층을 제거하기 위한 PET공정의 바람직한 공정 수행 여부를 판단하기 위해, 손상된 실리콘 기판을 기존의 장비 및 가스를 이용하여 플라즈마 에칭 및 PET공정을 실시하는 단계; 플라즈마 에칭 및 PET공정을 실시된 실리콘 기판을 감광막 스트립전 또는 스트립후에 서머 웨이브 값을 측정하는 단계; 측정된 서머 웨이브 값을 기준값과 비교하는 단계; 및 측정된 서머 웨이브 값과 기준값을 비교하여 PET공정의 바람직한 수행 여부를 판정하는 단계를 포함하는 것을 특징으로 한다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a contact hole in a semiconductor device, and more particularly to a method of forming a contact hole in a semiconductor device related to a technique for detecting a post-etch process (PET) process state after contact etching to form a contact hole will be. The method of forming a contact hole of a semiconductor device of the present invention is a method of forming a contact hole in a semiconductor device by using plasma etching and PET process using a conventional equipment and gas to determine whether or not a desired process of a PET process for removing a damaged layer by contact etching is performed ; Measuring the value of the summer wave before or after the stripping of the photoresist film on the silicon substrate subjected to the plasma etching and the PET process; Comparing the measured summer wave value with a reference value; And comparing the measured summer wave value with a reference value to determine whether or not the PET process is preferably performed.

Description

Method of forming a contact hole in a semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

Claims

Performing a plasma etching process and a PET process on a damaged silicon substrate using existing equipment and gas to determine whether or not a desired process of the PET process for removing a damaged layer by contact etching is performed; Measuring the value of the summer wave before or after the stripping of the photoresist film on the silicon substrate subjected to the plasma etching and the PET process; Comparing the measured summer wave value with a reference value; And comparing the measured summer wave value with a reference value to determine whether or not to perform the PET process favorably.

The method of claim 1, wherein the measurement of the summer wave is for in-line determination of the results of the PET process.

※ Note: It is disclosed by the contents of the first application.