KR970071092A - Method of manufacturing liquid crystal display device and structure of liquid crystal display device - Google Patents

Method of manufacturing liquid crystal display device and structure of liquid crystal display device Download PDF

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KR970071092A
KR970071092A KR1019960010414A KR19960010414A KR970071092A KR 970071092 A KR970071092 A KR 970071092A KR 1019960010414 A KR1019960010414 A KR 1019960010414A KR 19960010414 A KR19960010414 A KR 19960010414A KR 970071092 A KR970071092 A KR 970071092A
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South Korea
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insulating film
film
organic insulating
liquid crystal
display device
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KR1019960010414A
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Korean (ko)
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KR100202231B1 (en
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류기현
임경남
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구자홍
Lg 전자주식회사
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Priority to KR1019960010414A priority Critical patent/KR100202231B1/en
Priority to US08/831,717 priority patent/US6001539A/en
Priority to JP09979597A priority patent/JP4023866B2/en
Priority to FR9704209A priority patent/FR2747233B1/en
Priority to GB9707017A priority patent/GB2312073B/en
Priority to DE19714510A priority patent/DE19714510C2/en
Publication of KR970071092A publication Critical patent/KR970071092A/en
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Publication of KR100202231B1 publication Critical patent/KR100202231B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133357—Planarisation layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask

Abstract

본 발명은 TFT어레이를 덮도록 유기절연막을 도포하고 상기 유기절연막 위에 포토레지스트를 도포하여 콘택홀을 패터닝한 후 콘택홀을 드라이에칭하고 산소에슁으로 포토레지스트를 박리하는 단계와, 상기 포토레지스트를 박리한 후 일정시간 산소에슁으로 상기 유기절연막 표면을 산화규소(SiO2)막화 시키는 단계와, 상기 유기절연막 위에 ITO막과 포토레지스트를 도포하여 ITO막을 패터닝한 후 ITO막을 에칭하고 산소에슁으로 포토레지스트를 박리하여 화소전극을 형성하는 단계를 포함하도록 하여 유기절연막의 에칭과, 박리와, 산소에슁을 드라이에칭챔버(chamber)내에서 연속 진행할 수 있기 때문에 공정을 단축할 수 있으며 절연막을 패터닝한 후 포토레지스트를 박리할 때 콘택홀의 유기절연막과 무기절연막이 적층된 경계 부분에 NMP(N-Methyl-Pyrrolidone)와 알코올과 아민의 혼합물로 된 유기 용매가 침투하여 절연막이 팽창하는 종래의 문제점을 개선할 수 있고 또한, 유기절연막과 무기절연막의 열팽창계수 차이로 화소전극의 ITO막을 패터닝할 때 콘택홀 영역의 유기절연막과 무기절연막의 경계 부분에서 크랙이 발생하여 화소전극과 드레인전극이 단선되는 것을 방지할 수 있다.The present invention relates to a method for manufacturing a semiconductor device, comprising: applying an organic insulating film to cover a TFT array, applying a photoresist on the organic insulating film to pattern the contact hole, dry etching the contact hole and peeling the photoresist by oxygen- Etching the ITO film to form a silicon oxide (SiO 2 ) film on the surface of the organic insulating film by oxygen scavenging for a certain period of time after the film is peeled off, and applying an ITO film and a photoresist on the organic insulating film to etch the ITO film, The step of forming the pixel electrode by peeling the photoresist can shorten the process because etching, peeling, and oxygen etching of the organic insulating film can be continuously performed in the dry etching chamber, A NMP (N-Methyl-Pyrrolidone) is added to the boundary where the organic insulating film and the inorganic insulating film of the contact hole are stacked. e) and an organic solvent composed of a mixture of an alcohol and an amine penetrate and the insulating film expands, and when the ITO film of the pixel electrode is patterned with a difference in thermal expansion coefficient between the organic insulating film and the inorganic insulating film, Cracks are generated at the boundary between the organic insulating film and the inorganic insulating film of the pixel electrode and the drain electrode.

Description

액정표시장치의 제조방법 및 액정표시장치의 구조Method of manufacturing liquid crystal display device and structure of liquid crystal display device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제1도는 액정표시장치를 나타낸 도면, 제2도는 화소를 나타낸 평면도 및 단면도.FIG. 1 is a view showing a liquid crystal display device, FIG. 2 is a plan view and a sectional view showing a pixel.

Claims (8)

기판 위에 TFT어레이를 형성하는 단계와; 상기 TFT어레이를 덮도록 유기절연막 을 중착하는 단계와; 상기 유기절연막 위에 포토레지스트를 도포하고 에칭하는 단계와; 산소에슁으로 포토레지스트를 박리하고 상기 유기절연막 표면을 산소에슁으로 산화시켜 산화규소(SiO2)막을 형성하는 단계와; 투명도전막을 중착하고 포토레지스를 도포하는 단계와; 상기 투명도전막을 에칭한 후 산소에슁으로 포토레지스트를 박리하여 화소전극을 형성하는 단계를 포함하는 것을 특징으로 하는 액정표시장치의 제조방법.Forming a TFT array on the substrate; An organic insulating film covering the TFT array; Applying and etching a photoresist on the organic insulating film; Peeling the photoresist by oxygen etching and oxidizing the surface of the organic insulating film by oxygen etching to form a silicon oxide (SiO 2 ) film; Coating a transparent conductive film and applying photoresist; And etching the transparent conductive film and then removing the photoresist by oxygen etching to form a pixel electrode. 제1항에 있어서, 상기 유절연막은 규소결합구조를 갖는 것을 특징으로 하는 액정표시장치의 제조방법.The method as claimed in claim 1, Wherein the liquid crystal display device has a structure of a liquid crystal display device. 제1항에 있어서, 상기 포토레지스트는 무기 웨트 스트립 방법에 의해서 박리되는 것을 특징으로 하는 액정표시장치의 제조방법.The method of manufacturing a liquid crystal display device according to claim 1, wherein the photoresist is peeled off by an inorganic wet strip method. 제3항에 있어서, 상기 무기 스트립 방법은 용매가 알콜, 아세톤, 질산과 황산의 혼합액으로 이루어지는 그룹중 선택되는 하나를 사용하는 액정표시장치의 제조방법.The method according to claim 3, wherein the inorganic strip method uses one selected from the group consisting of alcohol, acetone, and a mixture of nitric acid and sulfuric acid as the solvent. 기판과; 상기 기판 위에 형성된 게이트배선과; 상기 게이트배선을 덮도록 형성된 게이트절연막과; 상기 게이트절연막 위에 형성된 TFT어레이와; 상기 TFT어레이를 덮도록 형성된 유기절연막과; 상기 유기절연막 표면이 산소에슁에 의하여 산화된 산화규소(SiO2)막과; 상기 절연막을 통하여 형성된 각각의 콘택홀과; 상기 콘택홀을 통해 상기 TFT어레이와 접촉되며 상기 산화규소(SiO2)막 위에 형성된 각각의 화소전극의 구조를 포함하는 것을 특징으로 하는 액정표시장치.Claims [1] A gate wiring formed on the substrate; A gate insulating film formed to cover the gate wiring; A TFT array formed on the gate insulating film; An organic insulating film formed to cover the TFT array; A silicon oxide (SiO 2 ) film on the surface of the organic insulating film oxidized by oxygen etching; Each of the contact holes formed through the insulating film; And a structure of each pixel electrode formed on the silicon oxide (SiO 2 ) film in contact with the TFT array through the contact hole. 제5항에 있어서, 상기 유절연막은 규소결합구조를 갖는 것을 특징으로 하는 액정표시장치의 제조방법.The method as claimed in claim 5, Wherein the liquid crystal display device has a structure of a liquid crystal display device. 기판과; 상기 기판 위에 형성된 소스전극과, 드레인전극과; 상기 소스전극과, 드레인전극에 위에 형성된 반도체층과; 상기 반도체층 위에 형성된 게이트절연막과; 상기 게이트절연막 위에 형성된 게이트전극과; 상기 게이트전극 위에 형성된 유기절연막과; 상기 유기절연막 표면이 산소에슁에 의하여 산화된 산화규소(SiO2)막과; 상기 절연막을 통하여 형성된 각각의 콘택홀과; 상기 콘택홀을 통해 상기 TFT어레이와 접촉되며 상기 산화규소(SiO2)막 위에 형성된 각각의 화소전극의 구조를 포함하는 것을 특징으로 하는 액정표시장치.Claims [1] A source electrode formed on the substrate; a drain electrode; A semiconductor layer formed on the source electrode and the drain electrode; A gate insulating film formed on the semiconductor layer; A gate electrode formed on the gate insulating film; An organic insulating layer formed on the gate electrode; A silicon oxide (SiO 2 ) film on the surface of the organic insulating film oxidized by oxygen etching; Each of the contact holes formed through the insulating film; And a structure of each pixel electrode formed on the silicon oxide (SiO 2 ) film in contact with the TFT array through the contact hole. 제7항에 있어서, 상기 유절연막은 규소결합구조를 갖는 것을 특징으로 하는 액정표시장치의 제조방법.The method as claimed in claim 7, Wherein the liquid crystal display device has a structure of a liquid crystal display device. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960010414A 1996-04-08 1996-04-08 A method for producting lcd device and structure of the lcd device KR100202231B1 (en)

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US08/831,717 US6001539A (en) 1996-04-08 1997-04-01 Method for manufacturing liquid crystal display
JP09979597A JP4023866B2 (en) 1996-04-08 1997-04-02 Manufacturing method of liquid crystal display device
FR9704209A FR2747233B1 (en) 1996-04-08 1997-04-07 METHOD OF MANUFACTURING A LIQUID CRYSTAL DISPLAY DEVICE
GB9707017A GB2312073B (en) 1996-04-08 1997-04-07 Method for manufacturing liquid crystal display
DE19714510A DE19714510C2 (en) 1996-04-08 1997-04-08 Manufacturing process for a liquid crystal display

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