KR980005496A

KR980005496A - A conductive film, a method of forming the same, and a method of manufacturing a semiconductor device having the same

Info

Publication number: KR980005496A
Application number: KR1019960023650A
Authority: KR
Inventors: 조경수
Original assignee: 김주용; 현대전자산업 주식회사
Priority date: 1996-06-25
Filing date: 1996-06-25
Publication date: 1998-03-30

Abstract

1. 청구범위에 기재된 발명이 속한 기술분야1. TECHNICAL FIELD OF THE INVENTION

반도체 장치 제조방법.Semiconductor device manufacturing method.

2. 발명이 해결하려고 하는 기술적 과제2. The technical problem to be solved by the invention

폴리사이드 구조의 전도막 형성시 실시사이드막의두께를 측정하기가 어렵고, 또한 형성되는 실리사이드막의 두께를 제어하기가 어려운 두께의 재현이 용이하지 않은 문제점이 있었음.When forming the conductive film of the polyside structure, it was difficult to measure the thickness of the implementation side film, and it was difficult to reproduce the thickness, which was difficult to control the thickness of the formed silicide film.

3. 발명의 행결방법의 요지3. Summary of the method of implementation of the invention

반도체 장치의 전도막 형성시 폴리사이드화의 진행을 정지시키는 막을 추가하으로써 실리사이드막의 두께를 제어할 수 있는 폴리사이드 구조의 전도막 형성방법을 제공하고자함.The present invention provides a method for forming a conductive film having a polycide structure in which a thickness of the silicide film can be controlled by adding a film to stop the progress of polysidization when forming a conductive film of a semiconductor device.

4. 발명의 중요한 용도4. Important uses of the invention

반도체 장치의 전도막 형성에 이용됨.Used to form conductive films in semiconductor devices.

Description

A conductive film, a method of forming the same, and a method of manufacturing a semiconductor device having the same

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도 내지 제3도는 본 발명의 일실시예에 따른 폴리사이드 구조의 게이트 전극 형성 공정도.1 to 3 are views illustrating a process of forming a gate electrode having a polyside structure according to an embodiment of the present invention.

Claims

A method of manufacturing a semiconductor device, comprising: forming an isolation layer at a predetermined portion on a silicon substrate; Forming a gate oxide film on the entire structure; Forming a first polysilicon film on the gate oxide film; Forming a barrier metal film on the first polysilicon film to prevent silicide from forming into the first polysilicon film; Forming a second polysilicon film on the barrier metal film; Forming a photoresist pattern for forming a gate electrode, and etching the second polysilicon layer, the barrier metal layer, the first polysilicon layer, and the gate oxide layer sequentially using the photoresist pattern as an etch barrier; Forming an oxide film on the entire structure and then etching the entire surface to form an oxide spacer; Forming a metal film for forming a silicide film on the entire structure; And silicifying a predetermined portion of the second polysilicon film and the exposed silicon substrate.

The method of claim 1, wherein the first polysilicon film is 800 to 1500 kPa. And said second polysilicon film is 500 to 1000 microns thick.

The method of forming a conductive film of a semiconductor device according to claim 1 or 2, wherein the barrier metal film is the titanium nitride (TiN) film.

The method of claim 1, wherein the barrier metal film is formed of the titanium nitride (TiN) film and a titanium oxy nitride film formed thereon.

The method of forming a conductive film of a semiconductor device according to claim 1 or 2, wherein the metal film is a titanium film.

6. The method of forming a conductive film of a semiconductor device according to claim 5, wherein the titanium film thickness is at least half of the thickness of the second polysilicon film.

A method of forming a conductive film of a semiconductor device, the method comprising: forming a first polysilicon film; Forming a barrier metal film on the first polysilicon film to prevent silicide from forming into the first polysilicon film; Forming a second polysilicon film on the barrier metal film; And forming a metal film for forming a silicide film on the entire structure, and silicifying the second polysilicon film.

8. The method of claim 7, wherein the first polysilicon film is 800-1500 kPa. And said second polysilicon film is 500 to 1000 microns thick.

The method of forming a conductive film of a semiconductor device according to claim 7 or 8, wherein the barrier metal film is the titanium nitride (TiN) film.

10. The method of claim 7 or 9, wherein the barrier metal film is formed of the titanium nitride (TiN) film and a titanium oxy nitride film formed thereon.

The method of forming a conductive film of a semiconductor device according to claim 7 or 8, wherein the metal film is a titanium film.

12. The method of claim 11, wherein the titanium film thickness is at least half the thickness of the second polysilicon film.

A conductive film of a semiconductor device, comprising: a first polysilicon film; A conductive film of a semiconductor device, comprising a barrier metal film formed on the first polysilicon film, and a silicide film formed on the barrier metal film.

15. The conductive film of claim 13, wherein the first polysilicon film is 800 to 1500 kPa, and the second polysilicon film is 500 to 1000 kPa thick.

15. The conductive film of claim 13 or 14, wherein the barrier metal film is a titanium nitride (TiN) film.

15. The conductive film of claim 13 or 14, wherein the barrier metal film is formed of the titanium nitride (TiN) film and a titanium oxy nitride film formed thereon.

15. The conductive film of claim 13 or 14, wherein the silicide film is a titanium silicide film.

The conductive film of a semiconductor device according to claim 17, wherein the titanium silicide film thickness is at least half of the thickness of the second polysilicon film.

※ Note: The disclosure is based on the initial application.