KR980004422A - 광학 기억 소자용 실리콘 접착제, 광학 기억 소자 및 광학 기억 소자의 제조방법 - Google Patents

광학 기억 소자용 실리콘 접착제, 광학 기억 소자 및 광학 기억 소자의 제조방법 Download PDF

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KR980004422A
KR980004422A KR1019970026993A KR19970026993A KR980004422A KR 980004422 A KR980004422 A KR 980004422A KR 1019970026993 A KR1019970026993 A KR 1019970026993A KR 19970026993 A KR19970026993 A KR 19970026993A KR 980004422 A KR980004422 A KR 980004422A
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마사유키 오니시
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다나베 에이이치
다우 코닝 도레이 실리콘 캄파니, 리미티드
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Abstract

본 발명은 첨가 반응 및 축합 반응으로 경화된 실리콘 조성물을 포함하는 광학 기억 소자용 실리콘 접착제에 관한것이다. 광학 기억 소자는 한 면에 기록층이 있는 지지체와 한 면에 기록층이 있거나 없는 지지체를 실리콘 접착제로 함께 접착함으로써 성형한다. 광학기억 소자를 제조하는 방법은 첨가 반응및 축합 반응으로 경화된 실리콘 조성물을 포함하는 실리콘 접착제로 한 면에 기록층이 있는 지지체와 한면에 기록층이 있거나 없는 지지체를 접착하는 것이다.

Description

광학 기억 소자용 실리콘 접착제, 광학 기억 소자 및 광학 기억 소자의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본발명의 광학기억 소자의 단면도.

Claims (9)

  1. 분자당 규소 결합된 알콕시 그룹 평균2개 이상과 규소 결합된 알케닐 그룹 평균 2개 이상을 갖는 오가노폴리실록산(A)100중량부, 성분(B)중의 규소 결합된 수소원자 대 성분(A)중의 규소 결합된 알케닐 그룹의 몰 비가 0.3:1내지 20:1인, 분자당 규소 결합된 수소원자가 평균 2개의 이상인 오가노하이드로 갠폴리실로산(B), 금속 축합 반응 촉매의 금속이 티탄, 지르코늄 및 알루미늄으로부터 선택되는 금속 축합 반응 촉매(C)0.01내지 20중량부 및 촉매량의 하이드로실릴화 반응 촉매(D)를 포함하는, 광학 기억소자의 제조에 사용하기에 적합한 실리콘 접착제에 대하여 경화성인 실리콘 조성물.
  2. 제1항에 있어서, 성분(A)가 분자당 규소 결합된 알콕시 그룹을 평균 2개 이상을 갖는 알콕시 치환된 오가노폴리실록산(a)과 분자당 규소 결합된 알케닐 그룹을 평균2개 이상 갖는 알케닐 치환된 오가노폴리실록산(b)과의 혼합물을 포함하는 실리콘 조성물.
  3. 분자당 규소 결합된 알콕시 그룹 평균 2개 이상과 규소 결합된 알케닐 그룹 평균 2개 이상을 갖는 오가노폴리실록산(A)100중량부,성분(B)중의 규소 결합된 수소원자 대 성분(A)중의 규소 결합된 알케닐 그룹의 몰 비가 0.3:1내지 20:1인, 분자당 규소 결합된 수소원자가 평균 2개의 이상인 오가노하이드로겐폴리실로산(B), 금속 축합 반응 촉매의 금속이 티탄, 지르코늄 및 알루미늄으로부터 선택되는 금속 축합반응 촉매(C)0.01내지 20중량부 및 촉매량의 하이드로실릴화 반응 촉매(D)인 초기 물질로부터의 생성물.
  4. (A)한면과 그 면 위의 기록층을 갖는 제1지지체,(B)실리콘 접착제 및,(C)실리콘 접착제(당해 실리콘 접착제는 첨가 반응과 축합 반응을 통해 경화되는 실리콘 조성물을 경화시킴으로써 제조된다)로 제1지지체에 접착된 제2지지체를 포함하는 광학기억소자.
  5. 제4항에 있어서, 실리콘 조성물이 분자당 규소 결합된 알콕시 그룹 평균 2개 이상과 규소 결합된 알케닐 그룹평균 2개이상을 갖는 오가노폴리실록산(A)100중량부,성분(B)중의 규소 결합된 수소원자 대성분(A)중의 규소 결합된 알케닐 그룹의 몰 비가 0.3:1내지 20:1인 분자당 규소 결합된 수소원자가 평균 2개의 이상인 오가노 하이드로겐폴리실로산(B), 금속 축합 반응 촉매의 금속이 티탄, 지르코늄 및 알루미늄으로부터 선택되는 금속 축합반응 촉매(C)0.01내지 20중량부 및 촉매량의 하이드로실릴화 반응 촉매(D)를 포함하는 광학 기억 소자.
  6. 제5항에 있어서, 성분 (A)가 분자당 규소 결합된 알콕시 그룹을 평균 2개 이상 갖는 알콕시 치환된 오가노폴리실록산(a)과 분자당 규소 결합된 알케닐 그룹을 평균2개 이상 갖는 알케닐 치환된 오가노폴리실록산(b)과의 혼합물을 포함하는 광학 기억 소자.
  7. 한 면과 그 면 위의 기록층을 갖는 제1지지체를 제공한 단계(A), 제2 지지체를 제공하는 단계(B)및 첨가 반응과 축합 반응을 통해 실리콘 접착제에 대해 경화성인 실리콘 조성물을 사용하여 제1 지지체를 제2 지지체에 접착시키는 단계(C)를 포함하는 광학기억 소자의 제조방법.
  8. 제7항에 있어서,실리콘 조성물이 분자당 규소 결합된 알콕시 그룹 평균 2개 이상과 규소 결합된 알케닐 그룹 평균 2개이상을 갖는 오가노폴리실록산(A)100중량부,성분(B)중의 규소 결합된 수소원자 대성분(A)중의 규소 결합된 알케닐 그룹의 몰 비가 0.3:1내지 20:1인, 분자당 규소 결합된 수소원자가 평균 2개의 이상인 오가노 하이드로갠폴리실로산(B), 금속 축합 반응 촉매의 금속이 티탄 지르코늄 및 알루미늄으로부터 선택되는 금속 축합 반응 촉매(C)0.01내지 20중량부 및 촉매량의 하이드로실릴화 반응 촉매(D)를 포함하는 방법.
  9. 제8항에 있어서, 성분 (A)가 분자당 규소 결합된 알콕시 그룹을 평균2개 이상 갖는 알콕시 치환된 오가노폴리실록산(a)과 분자당 규소 결합된 알케닐 그룹을 평균2개 이상 갖는 알케닐 치환된 오가노폴리실록산(b)과의 혼합물을 포함하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970026993A 1996-06-25 1997-06-25 광학기억소자용실리콘접착제,광학기억소자및광학기억소자의제조방법 KR100470015B1 (ko)

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JP8183976A JPH108022A (ja) 1996-06-25 1996-06-25 光メモリ素子用シリコーン系接着剤、光メモリ素子、および光メモリ素子の製造方法
JP96-183976 1996-06-25

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US (1) US5981682A (ko)
EP (1) EP0816465B1 (ko)
JP (1) JPH108022A (ko)
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DE (1) DE69719248T2 (ko)
MY (1) MY119389A (ko)
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FR2775481B1 (fr) * 1998-02-27 2003-10-24 Rhodia Chimie Sa Composition silicone adhesive reticulable et utilisation de cette composition pour le collage de substrats divers
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EP0816465A2 (en) 1998-01-07
EP0816465B1 (en) 2003-02-26
MY119389A (en) 2005-05-31
KR100470015B1 (ko) 2005-06-16
DE69719248D1 (de) 2003-04-03
TW541329B (en) 2003-07-11
EP0816465A3 (en) 1998-10-07
DE69719248T2 (de) 2003-12-11
JPH108022A (ja) 1998-01-13
US5981682A (en) 1999-11-09
SG50851A1 (en) 1998-07-20

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