KR980003886A

KR980003886A - Method for pattern formation of semiconductor device

Info

Publication number: KR980003886A
Application number: KR1019960025806A
Authority: KR
Inventors: 심경진
Original assignee: 김주용; 현대전자산업 주식회사
Priority date: 1996-06-29
Filing date: 1996-06-29
Publication date: 1998-03-30

Abstract

본 발명은 반도체소자의 패턴 형성방법에 관한 것으로, 플라즈마 식각 방법으로 감광막 패턴을 마스크로 이용하고, 하부의 도전층을 식각하여 도전층 패턴을 형성할 때 플라즈마 식각 이온물질외에 불활성기체인 아르곤(Ar)이 포함된 플라즈마에 의해 상기 감광막 패턴의 표면에 전기 전도도가 증대된 층이 형성되어 음이온이 도전층으로 이동된다. 그로인하여 식각증대 물질인 양이온이 감광막 패턴에 축적된 음이온에 의해 편향되는 문제점을 극복하여 수직한 측벽을 갖는 도전층 패턴을 형성할 수가 있다.The present invention relates to a method of forming a pattern of a semiconductor device, and more particularly, to a method of forming a pattern of a semiconductor device, which comprises forming a conductive layer pattern by using a photoresist pattern as a mask by etching a lower conductive layer, A layer having increased electrical conductivity is formed on the surface of the photoresist pattern to transfer the anion to the conductive layer. The conductive layer pattern having vertical sidewalls can be formed by overcoming the problem that the positive ions as the etching enhancing material are deflected by the anions accumulated in the photoresist pattern.

Description

Method for pattern formation of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제1도 내지 제3도는 종래기술로 플라즈마 식각 방법으로 감광막 패턴을 마스크로 이용하여 도전층 패턴을 형성하는 것을 도시한 단면도이다.FIGS. 1 to 3 are cross-sectional views showing a conventional method of forming a conductive layer pattern using a photoresist pattern as a mask by a plasma etching method.

Claims

A method of forming a semiconductor device pattern, comprising: forming a photoresist pattern on a conductive layer; forming a photoresist pattern on the conductive layer using a photoresist pattern using the photoresist pattern as a mask with a plasma containing argon (Ar) And forming a conductive layer pattern having vertical sidewalls by etching the layer.

The method according to claim 1, wherein the conductive layer is a metal layer or a polysilicon layer.

2. The plasma display panel of claim 1, wherein a plasma having argon (Ar) as an inert gas in addition to the plasma etching ion material is formed on the surface of the photoresist pattern to increase electrical conductivity, Forming a conductive layer pattern having a vertical sidewall by being transferred to the conductive layer pattern.

The method according to claim 1, wherein 50-200 SCCM of argon (Ar) is injected as the inert gas.

※ Note: It is disclosed by the contents of the first application.